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중학교 교육과정에 따른 특별실 위상 변화를 반영한 ‘기술·가정실’ 학교 저층부 배치 유연화 기초 연구
문경숙(Moon, Kyoung-Sook),고인룡(Koh, In-Lyong) 대한건축학회 2022 대한건축학회 학술발표대회 논문집 Vol.42 No.2
The purpose of this study is to study the flexibilization of space by examining the arrangement of the lower floors of the Technology·Home room reflecting the status change of the special room according to the middle school curriculum. This study is to examine the phase change of the special room by analyzing the spatial analysis of the arrangement of the lower floors of schools in Japan and the spatial changes of the arrangement of the lower floors according to the middle school curriculum in Korea. Changes in educational policy and curriculum are accompanied by changes in social perception and curriculum. The school space must change accordingly. Compared with the past, it can be seen from the Japanese and Korean cases that special rooms are currently arranged in the middle and lower floors of the school. As a result of this study, it is expected that it will be used as a planning data that can be newly introduced in the lower floors (1st and 2nd floors), where students access and exchanges are the most active, and based on this, it is expected to be used for in-depth actual school design.
학교 공간의 사용자 참여 설계를 위한 퍼실리테이팅 과정 연구
문경숙(Moon, Kyoung-Sook),원영주(Won, Young-Ju),고인룡(Koh, In-Lyong) 대한건축학회 2023 대한건축학회 학술발표대회 논문집 Vol.43 No.1
The purpose of this study is to present the necessary competencies and curriculum prototypes of facilitators for designing user-participating school facilities. It aims to establish a facilitator curriculum prototype that deals with architectural knowledge and expertise and identifies the competence and meaning as a facilitator to plan and conduct school design workshops. The purpose of this study is to recognize the importance of facilitator competency and to be used as useful data when constructing a curriculum.
Current Spreading Layer와 에피 영역 도핑 농도에 따른 4H-SiC Vertical MOSFET 항복 전압 최적화
안정준,문경숙,구상모,Ahn, Jung-Joon,Moon, Kyoung-Sook,Koo, Sang-Mo 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.10
In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.
4H-SiC DMOSFETs의 계면 전하 밀도에 따른 스위칭 특성 분석
강민석,문경숙,구상모,Kang, Min-Seok,Moon, Kyoung-Sook,Koo, Sang-Mo 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.6
SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.
Cr- 및 Ni- 소스/드레인 쇼트키 박막 트랜지스터의 장벽 특성에 대한 실험 및 모델링 연구
정지철,문경숙,구상모,Jung, Ji-Chul,Moon, Kyoung-Sook,Koo, Sang-Mo 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.10
By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.
AFM을 이용한 나노 패턴 형성과 크기에 따른 광특성 시뮬레이션
황민영,문경숙,구상모,Hwang, Min-Young,Moon, Kyoung-Sook,Koo, Sang-Mo 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.6
We report a top-down approach based on atomic force microscopy (AFM) local anodic oxidation for the fabrication of the nano-pattern field effect transistors (FETs). AFM anodic oxidation is relatively a simple process in atmosphere at room temperature but it still can result in patterns with a high spatial resolution, and compatibility with conventional silicon CMOS process. In this work, we study nano-pattern FETs for various cross-bar distance value D, from ${\sim}0.5\;{\mu}m$ to $1\;{\mu}m$. We compare the optical characteristics of the patterned FETs and of the reference FETs based on both 2-dimensional simulation and experimental results for the wavelength from 100 nm to 900 nm. The simulated the drain current of the nano-patterned FETs shows significantly higher value incident the reference FETs from ${\sim}1.7\;{\times}\;10^{-6}A$ to ${\sim}2.3\;{\times}\;10^{-6}A$ in the infrared range. The fabricated surface texturing of photo-transistors may be applied for high-efficiency photovoltaic devices.
표면 Texturization을 가진 Photovoltaic Device 내부의 열 분포 특성에 관한 연구
정지철,문경숙,구상모,Jung, Ji-Chul,Moon, Kyoung-Sook,Koo, Sang-Mo 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.7
The thermal distribution of 2D and 3D p-n photovoltaic diode structures with and without surface texturing has been studied. By analysis of the numerical simulation results of the I-V characteristics and lattice temperature distributions the effect of different texturing structures on the characteristics of silicon p-n photovoltaic devices has been studied systematically. The efficiency of the device having surface texturing shows more than ~2% enhancement compared to the reference devices which did not have texturing. In addition, the effect of the density of the texturing groove has been studied and it has been confirmed that the texturing structure not only improves the light trapping but also plays an important role in the heat radiation.
양자효과를 고려한 실리콘 나노선 트랜지스터의 채널 크기에 따른 전도 및 전하분포 특성 시뮬레이션
황민영,최창용,문경숙,구상모,Hwang, Min-Young,Choi, Chang-Yong,Moon, Kyoung-Sook,Koo, Sang-Mo 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.9
We report numerical simulations to investigate of the dependendce of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of $10\;{\mu}m$, but varying the channel width W from 5 nm to $5\;{\mu}m$, and thickness t from 10 nm to 30 nm. We have show that $Q_{ON}/Q_{OFF}$ drastically decreases (from $^{\sim}2.9{\times}10^4$ to $^{\sim}9.8{\times}10^3$) as the channel thickness increases (from 10 nm to 30 nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed then in the bottom of control channel.
한국판 건강문해력 측정도구(HLS-EU-Q47) 개발 및 노인 대상 적용
한희원(Han, Hee-Won),박성지(Park, Sung-Ji),강지숙(Kang, Ji Sook),문경숙(Moon, Kyoung-Suk),김지희(Kim, JI HEE),황종남(Hwang, Jongnam),오종묵(Oh, Jongmuk),우희순(Woo, Hee-Soon) 대한신경계작업치료학회 2021 재활치료과학 Vol.10 No.4
목적 : 건강정보에 대한 이해․적용․판단․접근에 기반한 건강문해력의 개념을 다루고 있는HLS-EU-Q47의 한국판을 개발하고, 노인들을 대상으로 본 도구를 적용하여 국내 노인들의 포괄적인건강문해력 수준을 확인하는데 목적이 있다. 연구방법 : HLS-EU-Q47의 번안 과정을 거쳐 전문가를 대상으로 내용타당도 검증을 통해 문항을 확정하였다. 이렇게 완성된 Korean–HLS-EU-Q47(K-HLS-EU-Q47)을 지역사회 노인 254명을 대상으로 내적일치도 및 신뢰도 분석과 일반적 변인에 따른 비교 분석을 실시하였다. 결과 : 노인들을 대상으로한 본 도구의 내적일치도는 Cronbach s α .81∼.91로 높은 수준의 신뢰도를보였다. 일반적 특성에 따른 비교 성별과 연령에 따른 건강문해력의 차이를 보였는데, 남성이 여성에비해 건강문해력이 높았으며 연령이 높아질수록 건강문해력의 저하를 보이는 것으로 나타났다. 결론 : 본 연구를 통하여 국내 노인의 포괄적인 건강문해력 수준을 확인하는데 사용할 수 있는K-HLS-EU-Q47을 소개하였으며, 본 연구 결과를 통한 노인들의 건강문해력 수준의 이해를 통하여노인들이 보다 건강한 삶을 유지할 수 있는 방법들의 모색이 활성화되기를 기대하는 바이다. Objective : This study aimed to develop a Korean version of the HLS-EU-Q47 that deals with the concept of health literacy based on the understanding, apply/use, process/appraisal, and access/obtain to health information. The purpose of this study is to confirm the level of comprehensive health literacy of the elderly in Korea using this tool. Methods : After going through the Korean interpretation process of HLS-EU-Q47, the items were confirmed through content validity verification by experts. The completed Korean–HLS-EU-Q47 (K-HLS-EU-Q47) was applied to 254 elderly people in the local community to analyze the degree of internal consistency and reliability. Furthermore, a comparative analysis based on the general variables was conducted. Results : The internal consistency of this tool for the elderly yielded Cronbach s α of .81~.91, indicating a high level of reliability. There was a difference in health literacy according to sex and age based on general characteristics. Men had higher health literacy than women, and with increasing age, health literacy decreased. Conclusion : In this study, the K-HLS-EU-Q47 was developed to assess the comprehensive health literacy level of the elderly in Korea. It is expected that the search for ways to maintain a healthier life for the elderly through understanding the health literacy levels of the elderly using the results of this study will become more active.