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Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions
Koo, Jamin,Lee, Myeongwon,Kang, Jeongmin,Yoon, Changjoon,Kim, Kwangeun,Jeon, Youngin,Kim, Sangsig Institute of Physics 2010 Semiconductor science and technology Vol.25 No.4
<P>The simple type conversion of n-type silicon nanowires (SiNWs) to p-type by the diffusion of Au ions is demonstrated in this study. An Au thin film with a thickness of 10 nm was thermally deposited on an n-type SiNW and a rapid thermal annealing process was performed subsequently to diffuse the Au ions into the SiNW. The electrical characteristics of a back-gate field-effect transistor with a channel composed of the Au-diffused SiNW show that the Au-diffused SiNW acts as a p-type one. The type conversion phenomenon of the SiNW caused by the diffusion of Au ions is discussed in detail in this paper.</P>
A systematic approach towards accident analysis and prevention
Jamin Koo,Seunghyok Kim,Hyosuk Kim,Young-Hun Kim,En Sup Yoon 한국화학공학회 2009 Korean Journal of Chemical Engineering Vol.26 No.6
A systematic approach towards accident analysis and prevention has been developed. It relies on system theory as an incident causation model, and adopts a hybrid model for identifying elements of the safety management system. PDCA (Plan-Do-Check-Act) process, commonly practiced in business for quality control, has been applied to defining components of the system. Using the experts’ judgment, accident data and their reported causes are correlated to the defined components, with RBI (risk-based inspection) defined consequence scores as weighting factors. The application of this approach allows users such as governments and companies to identify and prioritize among causes of accidents and near-misses in the petrochemical industry. A case study using the accident data of Yeosu petrochemical complex from 1990 to 2004 has been applied to illustrate insights readily obtainable by using the developed analysis technique. The results suggest comprehensive identification and ranking of accident causes for effective prevention of accidents in the future.
광량 변화에 강건한 가중치 국부 기술자 기반의 스테레오 정합
구자민(Jamin Koo),김용호(Yong-Ho Kim),이상근(Sangkeun Lee) 대한전자공학회 2015 전자공학회논문지 Vol.52 No.4
기하학적 특성이 주어진 두 개 이상의 카메라를 사용하거나 한 개의 카메라를 이동시켜가면서 스테레오 영상을 얻을 때에, 카메라 설정 값의 차이, 조명의 변화 등으로 인해 광량의 변화가 발생한다. 하지만 색상 유사도를 기반으로 한 기존의 스테레오 정합 방법들은 정확한 대응점을 추정하지 못한다. 본 논문에서는 광량 변화에 강건하기 위한 방법으로 스테레오 영상에서 픽셀의 밝기 정보와 그라디언트 정보 및 텍스쳐 정보를 국부 기술자로 구성하는 새로운 방법을 제안하고, 엔트로피에 기반한 적응적 가중치를 국부 기술자에 부여하여 광량 변화에도 정확한 대응점을 추정할 수 있도록 한다. 제안하는 방법은 조명의 변화, 노출 시간의 차이로 인해 광량 변화가 발생된 Middlebury의 실험 영상을 통해 실험되었으며, 광량 변화에 강건한 최근의 방법들과 비교하였다. 그 결과, 제안하는 방법은 전체 영역에서의 오정합 비율이 약 5 % 정도로 비교하는 방법들보다 낮게 발생하여 가장 좋은 성능을 보여주었다. In a real scenario, radiometric change has frequently occurred in the stereo image acquisition process using multiple cameras with geometric characteristics or moving a single camera because it has different camera parameters and illumination change. Conventional stereo matching algorithms have a difficulty in finding correct corresponding points because it is assumed that corresponding pixels have similar color values. In this paper, we present a new method based on the local descriptor reflecting intensity, gradient and texture information. Furthermore, an adaptive weight for local descriptor based on the entropy is applied to estimate correct corresponding points under radiometric variation. The proposed method is tested on Middlebury datasets with radiometric changes, and compared with state-of-the-art algorithms. Experimental result shows that the proposed scheme outperforms other comparison algorithms around 5% less matching error on average.
구자민(Jamin Koo),이명원(Myeongwon Lee),강정민(Jeongmin Kang),윤창준(Changjoon Yoon),김광은(Kwangeun Kim),김상식(Sangsig Kim) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7
n형 특성을 가진 실리콘 나노선을 금확산을 이용하여 p형 특성을 가진 상태의 나노선으로 변환하였다. Back-gate 형태로 제작된 n형의 실리콘 나노선 전계 효과 트랜지스터를 제작한 후, 채널로 사용되는 나노선 위에 금을 열증착방법을 이용하여 증착했다. 이후, 급속열처리공정을 통해 실리콘 나노선에 금이온을 확산시켰다. 나노선의 특성 변환을 확인하기 위하여 전계 효과 트랜지스터의 특성곡선을 통해 그 변화를 관찰하였다.
Charge Transport Modulation of Silicon Nanowires by O₂ Plasma
구자민(Jamin Koo),이명원(Myeongwon Lee),김상식(Sangsig Kim) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.11
The modification of the electrical characteristics of field-effect transistors (FETs) with channels composed of p-type silicon nanowires (SiNWs) by oxygen plasma treatment is investigated in this study. After the back-gate SiNWFETs were subjected to oxygen plasma treatment, the magnitude of the drain current of the p-type SiNWs was increased and the gate-dependent characteristics of them were also improved. The changes in the electrical characteristics are due to the adsorption of oxygen ions on the surface of the SiNWs. To verify the effect of the oxygen ions, the SiNWFETs were kept in a vacuum for 24 hours whereupon their electrical characteristics tended to revert to their inherent state.
구자민,류지성,정규혁,이철우,박응로,박광식 한국환경독성학회 2001 환경독성보건학회지 Vol.16 No.4
Endocrine disruption in crucian carp (Carassius auratus) living in the branch of Han River were examined. Vitellogenin level in plasma was measured using ELISA system and aromatase mRNA level in brain was observed using RT-PCR technique. In all female fish, vitellogenin levels were in the range of 20-40㎍/ml and aromatase mRNA expression could be detected on the agarose gel after RT-PCR. However, in case of males, vitellogenin level was elevated in only one fish, while vitellogenin was hardly detected in others. Aromatase was expressed in all males although the levels were relatively lower than the level in female fish. Testis-ova and any other histological changes of reproductive organ were not shown in both sexes.
Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates
Lee, Myeongwon,Koo, Jamin,Chung, Eun-Ae,Jeong, Dong-Young,Koo, Yong-Seo,Kim, Sangsig IOP Pub 2009 Nanotechnology Vol.20 No.45
<P>A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of −1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p<SUP>+</SUP> drain and n<SUP>+</SUP> channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate. </P>