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겉보기 열용량법을 이용한 합금의 레이저 융용풀에서의 열 및 유동해석
김우승,심복철,임익태 漢陽大學校 工學技術硏究所 1997 工學技術論文集 Vol.6 No.1
An apparent capacity method is employed to solve numerically transient and steady state laser melting emblem of alloy. Momentum equations are solved in the liquid and mushy zones by using the SOLA-VOF algorithm. Using a laser with a top-hat profile, a wide range of studies are performed for steel. The streamline plots show the existence of rotating cell in the molten pool. It is found that the shapes of pool, the distributions of surface velocity and surface temperature are quite different from the case without convection effect in the mushy zone.
문상돈,김연직,임익태,박찬우 한국공작기계학회 2008 한국공작기계학회 춘계학술대회논문집 Vol.2008 No.-
As a technology to machine the 3-dimensional shapes of general metal material more flexibly, machining technologies such as metal cutting, grinding, etc have been steadily improved in their accuracy as well. However, the working method using machining technologies are restricted in terms of surface roughness, metal working accuracy and working hours, if a workpiece has an irregular 3-dimensional shape. Magnetic abrasive finishing process is also one of the super-precision machining technologies which proceed with the finishing metal working of precision working piece using the action of magnetic field and the mixed type magnetic abrasive. However, such studies only focus on the improvement of machining accuracy but are still incomplete in investigating the roundness. This study aims to realize the high accuracy finishing machining focusing on the roundness after magnetic abrasive finishing process of circular workpiece and the surface roughness of precision machining surface.
A Study on the Dielctric Properties of the PTC $BaTiO_3$ Ceramic Thin Films
Im, Ik-Tae,So, Byung Moon The Korean Society Of SemiconductorDisplay Technol 2012 반도체디스플레이기술학회지 Vol.11 No.3
The films were deposited at evaporator system and were annealed at heat treatment. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. Samples Preparation were analyzed in term of positive temperature coefficient of Resistivity Samples were made in the substrate tempera-true of $400^{\circ}C$ deposition time of 10 hours, and forward power of 210watt. R-T(resistivity-temperature) Characteristics of the samples were investigated as a function of the substrate type and the ambient temperature. The resistivity of the thin film specimens was compared with that of the bulk type specimens. By using RF/DC magnetron sputtering system, we obtained lower resistivity in the thermistor with thin $BaTiO_3$ film than that in the bulk type thermistor.
Effects of Thermal Contact Resistance on Film Growth Rate in a Horizontal MOCVD Reactor
Ik-Tae Im,Nag Jung Choi,Masakazu Sugiyama,Yukihiro Shimogaki,Byoung Ho Kim,Kwang-Sun Kim 대한기계학회 2005 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.19 No.6
Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.
Numerical Study on the Air-Cushion Glass Transportation Unit for LCD Panels
Im Ik-Tae,Jeon Hyun-Joo,Kim Kwang-Sun The Korean Society Of Semiconductor Display Techno 2006 반도체디스플레이기술학회지 Vol.5 No.1
Non-contact transportation system using air cushion for the manufacturing of large-sized LCD panels was considered. Flow characteristics between air pad and glass plate was analyzed using computational fluid dynamics method to obtain optimized air pad configurations. Effects of the design variables such as hole arrays from which gas is injected, gas-feeding method into the gas supplying channels, and horizontal and vertical pitches of clusters of holes were studied. Optimized air pad unit gave evenly distributed pressure contour on the glass surface and well-suspended levitation height in the experiment.
Effects of Thermal Contact Resistance on Film Growth Rate in a Horizontal MOCVD Reactor
Im Ik-Tae,Choi Nag Jung,Sugiyama Masakazu,Nakano Yoshiyaki,Shimogaki Yukihiro,Kim Byoung Ho,Kim Kwang-Sun The Korean Society of Mechanical Engineers 2005 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.19 No.6
Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.
임익태(Ik-Tae Im),김병호(Byoung Ho Kim),김광선(Kwang-Sun Kim),최낙정(Nag Jung Choi) 한국자동차공학회 2004 한국자동차공학회 춘 추계 학술대회 논문집 Vol.- No.-
Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCYD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Temperature drop due to the thermal contact resistance affected to the GaAs film growth but not to the InP film growth.