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Dynamic Response of Blade Surface Cavitation
Masakazu Toyoshima,Kimiya Sakaguchi,Kota Tsubouchi,Hironori Horiguchi,Kazuyasu Sugiyama 한국유체기계학회 2016 International journal of fluid machinery and syste Vol.9 No.2
In high speed turbopumps, cavitation occurs and often causes the flow instabilities such as cavitation surge and rotating cavitation. The occurrence of these cavitation instabilities is considered to relate to dynamic characteristics of the cavitation, which are modelled using a cavitation compliance and a mass flow gain factor. Various types of cavitation such as a blade surface cavitation, a tip leakage vortex cavitation, and a backflow vortex cavitation occur at the same time in the inducer and the dynamic characteristics of each cavitation have not been clarified yet in experiments. Focusing on the blade surface cavitation as one of fundamental cavitation, we investigated the dynamic characteristics of the blade surface cavitation on a flat plate hydrofoil in experiments in the present study.
Dynamic Response of Blade Surface Cavitation
Toyoshima, Masakazu,Sakaguchi, Kimiya,Tsubouchi, Kota,Horiguchi, Hironori,Sugiyama, Kazuyasu Korean Society for Fluid machinery 2016 International journal of fluid machinery and syste Vol.9 No.2
In high speed turbopumps, cavitation occurs and often causes the flow instabilities such as cavitation surge and rotating cavitation. The occurrence of these cavitation instabilities is considered to relate to dynamic characteristics of the cavitation, which are modelled using a cavitation compliance and a mass flow gain factor. Various types of cavitation such as a blade surface cavitation, a tip leakage vortex cavitation, and a backflow vortex cavitation occur at the same time in the inducer and the dynamic characteristics of each cavitation have not been clarified yet in experiments. Focusing on the blade surface cavitation as one of fundamental cavitation, we investigated the dynamic characteristics of the blade surface cavitation on a flat plate hydrofoil in experiments in the present study.
Effects of Thermal Contact Resistance on Film Growth Rate in a Horizontal MOCVD Reactor
Ik-Tae Im,Nag Jung Choi,Masakazu Sugiyama,Yukihiro Shimogaki,Byoung Ho Kim,Kwang-Sun Kim 대한기계학회 2005 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.19 No.6
Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.
Effects of Thermal Contact Resistance on Film Growth Rate in a Horizontal MOCVD Reactor
Im Ik-Tae,Choi Nag Jung,Sugiyama Masakazu,Nakano Yoshiyaki,Shimogaki Yukihiro,Kim Byoung Ho,Kim Kwang-Sun The Korean Society of Mechanical Engineers 2005 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.19 No.6
Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.