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Eu Doping Effect on $CaAl_2O_4:Eu^{2+}$ Phosphor Material
Bartwal, Kunwar Singh,Ryu, Ho-Jin The Korean Society Of Semiconductor Display Techno 2007 반도체디스플레이기술학회지 Vol.6 No.2
High brightness and long persistent luminescence phosphor $CaAl_2O_4:Eu^{2+}$ was prepared with varying $Eu^{2+}$ concentration by solid state reaction technique. Synthesized materials were investigated by powder X-ray diffractometer (XRD), SEM, TEM, photoluminescence excitation and emission spectra. Broad band UV excited luminescence of the $CaAl_2O_4:Eu^{2+}$ was observed in the blue region (${\lambda}_{max}\;=\;440\;nm$) due to transitions from the $4f^65d^1$ to the $4f^7$ configuration of the $Eu^{2+}$ ion. The decay time of the persistence indicated that the persistent luminescence phosphor has bright phosphorescence and maintains a long duration. These materials have great potential for outdoor night time displays.
Electrical and Dielectric Properties of MgO Thin Films Prepared through Electron-Beam Deposition
You Yil-Hwan,Kim Jung-Seok,Hwang Jin-Ha The Korean Society Of Semiconductor Display Techno 2006 반도체디스플레이기술학회지 Vol.5 No.1
MgO thin films were prepared through electron-beam deposition onto ITO-coated glass substrates in order to measure electrical, dielectric, and microstructural properties. Design of experiments was performed in this study with the aim to understanding of the effects of processing variables, e.g., substrate temperature and filament current of an e-beam evaporator statistically. Leakage currents, relative dielectric constants, and diffraction intensities of MgO thin films were analyzed statistically, following the analysis procedure provided in the design of experiments. The leakage current level of MgO thin films has been found to be statistically significant at the level of $\alpha=0.1$.
Numerical Study on the Air-Cushion Glass Transportation Unit for LCD Panels
Im Ik-Tae,Jeon Hyun-Joo,Kim Kwang-Sun The Korean Society Of Semiconductor Display Techno 2006 반도체디스플레이기술학회지 Vol.5 No.1
Non-contact transportation system using air cushion for the manufacturing of large-sized LCD panels was considered. Flow characteristics between air pad and glass plate was analyzed using computational fluid dynamics method to obtain optimized air pad configurations. Effects of the design variables such as hole arrays from which gas is injected, gas-feeding method into the gas supplying channels, and horizontal and vertical pitches of clusters of holes were studied. Optimized air pad unit gave evenly distributed pressure contour on the glass surface and well-suspended levitation height in the experiment.
Electrical Properties of Organic Materials as Low Dielectric Constant Materials
Oh Teresa,Kim Hong Bae,Kwon Hak Yong,Son Jae Gu The Korean Society Of Semiconductor Display Techno 2005 반도체디스플레이기술학회지 Vol.4 No.3
The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link break-age structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.
Generation of Si-O-C Bond without Si-$CH_3$ Bond in Hybrid Type SiOC Film
Oh, Teresa The Korean Society Of Semiconductor Display Techno 2008 반도체디스플레이기술학회지 Vol.7 No.3
The chemical shift of SiOC film was observed according to the flow rate ratio. SiOC film had the broad main band of $880\sim1190cm^{-1}$ and the sharp Si-$CH_3$ bond at $1252cm^{-1}$, and the peak position of the main bond in the infrared spectra moved to high frequency according to the increasing of an BTMSM flow rate. So the increment of the alkyl group induced the C-H bond condensation in the film, and shows the blueshift in the infrared spectra. In the case of P5000 system of Applied Materials Corporation, the strong bond of Si-CH3 bond in precursor does not enough to dissociated and ionized, because low plasma energy due to the capactive coupled CVD. Therefore, there was the sharp peak of Si-$CH_3$ bond at $1252cm^{-1}$.
A Study on the Leakage Current Voltage of Hybrid Type Thin Films Using a Dilute OTS Solution
Kim Hong-Bae,Oh Teresa The Korean Society Of Semiconductor Display Techno 2006 반도체디스플레이기술학회지 Vol.5 No.1
To improve the performance of organic thin film transistor, we investigated the properties of gate insulator's surface according to the leakage current by I-V measurement. The surface was treated by the dilute n-octadecyltrichlorosilane solution. The alkyl group of n-octadecyltrichlorosilane induced the electron tunneling and the electron tunneling current caused the breakdown at high electric field, consequently shifting the breakdown voltage. The 0.5% sample with an electron-rich group was found to have a large leakage current and a low barrier height because of the effect of an energy barrier lowered by, thermionic current, which is called the Schottky contact. The surface properties of the insulator were analyzed by I-V measurement using the effect of Poole-Frankel emission.
Pulse-Grouping Control Method for High power Density DC/DC Converters
Kang, Shin-Ho,Jang, Jun-Ho,Lee, Jun-Young The Korean Society Of Semiconductor Display Techno 2007 반도체디스플레이기술학회지 Vol.6 No.2
The proposed method offers an improved DC/DC converter scheme to increase power density. It is based on half-bridge topology with newly introduced pulse-grouping control method, which helps to reduce the transformer size and the volume of semiconductor devices maintaining high efficiency. Test results with 85W(18.5V/4.6A) design shows that the measured efficiency is 93.5% with power density of $36W/in^3$.
Cho, Hyun-Chan,Kim, Doo-Yong The Korean Society Of Semiconductor Display Techno 2005 반도체디스플레이기술학회지 Vol.4 No.2
This paper proposes a method for the intelligent load distribution of two cooperating robots(TCRs) using fuzzy logic. The proposed scheme requires the knowledge of the robots' dynamics, which in turn depend upon the characteristics of large flat panel displays(LFPDs) carried by the TCRs. However, the dynamic properties of the LFPD are not known exactly, so that the dynamics of the robots, and hence the required Joint torque, must be calculated for nominal set of the LFPD characteristics. The force of the TCRs is an important factor in carrying the LFPD. It is divided into external force and internal force. In general, the effects of the internal force of the TCRs are not considered in performing the load distribution in terms of optimal time, but they are essential in optimal trajectory planning; if they are not taken into consideration, the optimal scheme is no longer fitting. To alleviate this deficiency, we present an algorithm for finding the internal-force (actors for the TCRs in terms of optimal time. The effectiveness of the proposed system is demonstrated by computer simulations using two three-joint planner robot manipulators.
Enhanced Crystallization of Si at Low Temperature by $O_2$ Flow during Deposition
Nam, Hyoung-Gin,Koo, Kyung-Hwan The Korean Society Of Semiconductor Display Techno 2007 반도체디스플레이기술학회지 Vol.6 No.2
Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.
Modeling and Control of a Four Mount Active Micro-vibration Isolation System
Banik, Rahul,Gweon, Dae-Gab The Korean Society Of Semiconductor Display Techno 2006 반도체디스플레이기술학회지 Vol.5 No.4
Micro vibration isolation, typically originated from ground, is always a prime concern for the nano-measurement instruments such as Atomic Force Microscopes. A four mount active vibration isolation system is proposed in this paper. Modeling and control of such a four mount system was analyzed. Combined active-passive isolation principle is used for vibration isolation by mounting the instrument on a passively damped isolation system made of Elastomer along with the active stage in parallel that consists of very soft actuation system, the Voice Coil Motor. The active stage works in combination with the passive stage for working as a very low frequency vibration attenuator.