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Rui Zou,Xiao Zhou,Hailing Liu,Peng Wang,Fan Xia,Liqing Kang,Lei Yu,Depei Wu,Zhengming Jin,Changju Qu 대한암학회 2023 Cancer Research and Treatment Vol.55 No.4
Primary central nervous system lymphoma (PCNSL) is a rare and aggressive non-Hodgkin’s lymphoma that affects the brain, eyes, cerebrospinal fluid, or spinal cord without systemic involvement. The outcome of patients with PCNSL is worse compared to patients with systemic diffuse large B-cell lymphoma. Given potential mortality associated with severe immune effector cell-associated neurotoxicity syndrome (ICANS), patients with PCNSL have been excluded from most clinical trials involving chimeric antigen receptor T-cell (CAR-T) therapy initially. Here, we report for the first time to apply decitabine-primed tandem CD19/CD22 dual-targeted CAR-T therapy with programmed cell death-1 (PD-1) and Bruton’s tyrosine kinase (BTK) inhibitors maintenance in one patient with multiline-resistant refractory PCNSL and the patient has maintained complete remission (CR) for a 35-month follow-up period. This case represents the first successful treatment of multiline resistant refractory PCNSL with long-term CR and without inducing ICANS under tandem CD19/CD22 bispecific CAR-T therapy followed by maintenance therapy with PD-1 and BTK inhibitors. This study shows tremendous potential in the treatment of PCNSL and offers a look toward ongoing clinical studies.
Lei Yang,Shuai Guo,Qiuling Yang,Yuankun Zhu,Bing Dai,Hailing Yu,Pei Lei,Jiecai Han,Ying Hou,Jiaqi Zhu 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.6
The preferentially oriented In2O3 thin films were prepared on glass substrates by conventional magnetron sputtering with Ar+ plasma exposure at room temperature. Based on the x-ray diffraction, x-ray photoelectron spectroscopy, and UV photoelectron spectroscopy results, it was found that the Ar+ plasma exposure not only enhanced the low-temperature crystallization of In2O3 thin films, but also led to a dramatic improvement in the work function. Furthermore, it demonstrated that the shift mechanism of the work function in In2O3 thin films mainly combined with theelimination of oxygen defects and the change of the preferential orientation of In2O3 film surface.