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Lei Yang,Shuai Guo,Qiuling Yang,Yuankun Zhu,Bing Dai,Hailing Yu,Pei Lei,Jiecai Han,Ying Hou,Jiaqi Zhu 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.6
The preferentially oriented In2O3 thin films were prepared on glass substrates by conventional magnetron sputtering with Ar+ plasma exposure at room temperature. Based on the x-ray diffraction, x-ray photoelectron spectroscopy, and UV photoelectron spectroscopy results, it was found that the Ar+ plasma exposure not only enhanced the low-temperature crystallization of In2O3 thin films, but also led to a dramatic improvement in the work function. Furthermore, it demonstrated that the shift mechanism of the work function in In2O3 thin films mainly combined with theelimination of oxygen defects and the change of the preferential orientation of In2O3 film surface.
Cao, Qiuling,Che, Yanbo,Yang, Jianxiong,Mi, Menglai,Men, Yaoyao The Korean Institute of Power Electronics 2021 JOURNAL OF POWER ELECTRONICS Vol.21 No.7
The aging and malfunction of devices with great power have been the main causes of the collapse and failure of grid systems. Since they are frequently used in grid systems, the failure of a solid-state-transformer has a great impact on the energy-saving and normal operation of network systems. Moreover, the main switching element of a solid-state-transformer is a welding type IGBT, which is also the most fragile part. First, the uneven current flow phenomenon of paralleled IGBT modules is introduced. Then, the main factors influencing solid-state-transformer failure, along with the short-circuit and open-circuit faults of IGBTs are analyzed. After the derivation V<sub>CE</sub>, it can be seen that it is related to the short-circuit and open-circuit faults of IGBTs. After comparison and analysis, one type of solid-state-transformer should be chosen to be widely applied and with integral functions for models and simulations. The IGBTs in solid-state-transformers vary in terms of fault condition and position, which influences the internal and external electrical parameters of systems. Therefore, it is proposed that collector-emitter voltage can be used to characterize the fault conditions of solid-state-transformers. Through simulation verification and waveform observations, it can be seen that the collector-emitter voltage and V<sub>M</sub>, which is the voltage of the primary side of the transformer in a solid-state-transformer, can be used to characterize the failure condition of the internal converter of the solid-state-transformer.
Enrichment Characteristics and Health Risk Assessment of Heavy Metals in Soil-Crops System
Fei Liu,Zhong Yang,Qiuling Li,Tao Li 대한토목학회 2023 KSCE Journal of Civil Engineering Vol.27 No.9
The effects of heavy metals in soil-crops systems, their enrichment characteristics, and health risks were investigated by analyzing the As, Cr, Cu, Pb, Cd, and Hg in 216 paired soil and crop samples from Yuyao, Zhejiang Province, China. Statistical analyses, enrichment characteristics, and health risks to adults were assessed using the health risk assessment model used by the U. S. Environmental Protection Agency. The results showed that the main sources of heavy metals were atmospheric pollution, water pollution, and pesticide spraying, that caused local pollution in bayberry soil, and that the Pb pollution source may be industrial waste and oil combustion release. They also indicated that the sources polluting bayberry soil with Cu and Hg were probably the same, the mustard-soil system had a relatively lower absorption capacity for heavy metals, and there was a significant correlation between heavy metals in the soil-rice system. The main carcinogenic risk factors associated with bayberry intake were As and Cr, but there were no non-carcinogenic and carcinogenic risks associated with rice intake. The non-carcinogenic and carcinogenic risks associated with bayberry could be reduced by planting on land not exposed to air and industrial pollution and to avoid spraying bayberry with pesticides.