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- 저자 : Jiecai Han (검색결과 3 건)
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Quantitative Process Design of 1-D Crystallization for Pure Melt
Lunyong Zhang,Hongbo Zuo,Dawei Xing,Jiecai Han,Jianfei Sun 대한금속·재료학회 2010 METALS AND MATERIALS International Vol.16 No.5
A 1-D crystallization process has been analyzed for thermal diffusion by solving the Fourier equation. The expressions of thermal fields indicate that the temperature decreases as the crystal grows and the temperature decreases in the solid phase as the crystal growth rate decreases. The trend of temperature variation is the opposite in the liquid phase. Meanwhile the temperature gradient decays along the crystal growth direction in both the solid and liquid phases. An obvious temperature layer gradually appears as the crystal growth rate increases when the crystal grows in an undercooled melt. According to these results, the following guidelines are suggested for the quantitative process design of the 1-D crystallization at a constant crystal growth rate: (1) the heater temperature must be decreased as the crystal grows along a route established using a formula, (2) the linear simplification of temperature distribution is applicable to the process design of crystallization only below a high growth rate limit, and (3) in order to keep the crystal growing in a non-undercooled melt, its growth rate cannot exceed a maximum.
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Bias process for heteroepitaxial diamond nucleation on Ir substrates
Wang Weihua,Yang Shilin,Liu Benjian,Hao Xiaobin,Han Jiecai,Dai Bing,Zhu Jiaqi 한국탄소학회 2023 Carbon Letters Vol.33 No.2
Heteroepitaxy is a better method of enlarging SCD wafer size than homoepitaxy. In this work, several aspects of the bias process for heteroepitaxial diamond nucleation are studied experimentally. First, with increasing bias time, the diamond-nucleation pathway is found to transform from “isolated-crystal nucleation” to “typical domain-nucleation” and back to “isolated-crystal nucleation.” An interdependent relationship between bias voltage and bias time is proposed: the higher the bias voltage, the shorter the bias time. Second, a correlation exists between the threshold bias voltage and reactor-chamber pressure: a higher reactor chamber pressure usually requires a higher threshold bias voltage to realize “typical domain nucleation.” Third, diamond bias-enhanced nucleation and growth is observed at a high CH4 content, where the dynamic equilibrium between amorphous-carbon-layer deposition and atomic-hydrogen etching is broken. Finally, epitaxial nucleation is obtained on a substrate with ∅30 mm in a home-made MPCVD setup.
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Lei Yang,Shuai Guo,Qiuling Yang,Yuankun Zhu,Bing Dai,Hailing Yu,Pei Lei,Jiecai Han,Ying Hou,Jiaqi Zhu 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.6
The preferentially oriented In2O3 thin films were prepared on glass substrates by conventional magnetron sputtering with Ar+ plasma exposure at room temperature. Based on the x-ray diffraction, x-ray photoelectron spectroscopy, and UV photoelectron spectroscopy results, it was found that the Ar+ plasma exposure not only enhanced the low-temperature crystallization of In2O3 thin films, but also led to a dramatic improvement in the work function. Furthermore, it demonstrated that the shift mechanism of the work function in In2O3 thin films mainly combined with theelimination of oxygen defects and the change of the preferential orientation of In2O3 film surface.
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