시민교육과 한국 사회

에이미 것만(Amy Gutmann),곽준혁(Kwak Jun-Hyeok) 고려대학교 아세아문제연구소 2009 亞細亞硏究 Vol.52 No.4

In recent years, many scholars have recognized that despite institutional reforms, South Korea is falling into what Colin Crouch coins as post-democracy. They have observed that faltering on the verge of democratic consolidation, South Korea is experiencing a paradoxical process: while it is moving fast toward constitutional democracy in which election can make government more accountable and responsible for its conduct, its citizens gradually become a passive and incoherent mass responding intermittently only to the dramatic issue set by politicians and militant political activists. Yet too often how and why the post-democratic trivialization of participatory democracy and the dramatic development of citizen movement do intersect in South Korea remains unexplained. Being concerned with these observations, this interview with Amy Gutmann aims to explore a regulative principle which can guides thinking in the ongoing process in which citizens as well as experts consider what justice requires in the case of particular conflicts in specific contexts, with special but not exclusive attention to civic education. Specifically, addressing the principles and structure of Amy Gutmann’s liberal theory of justice in light of liberal egalitarianism, deliberative democracy, democratic education, and identity politics, this interview seeks to investigate her theories of democratic education in four aspects: the plausible reconciliation of liberal egalitarianism with redistribution and participation, the realization of democratic education through deliberative democracy, the need for civic education with respect to multicultural coexistence, and the applicability of democratic education especially in South Korea which is experiencing both political indifference and ideological antagonism.

Wafer-Level Three-Dimensional Monolithic Integration for Intelligent Wireless Terminals

Gutmann, R.J.,Zeng, A.Y.,Devarajan, S.,Lu, J.Q.,Rose, K. The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.3

A three-dimensional (3D) IC technology platform is presented for high-performance, low-cost heterogeneous integration of silicon ICs. The platform uses dielectric adhesive bonding of fully-processed wafer-to-wafer aligned ICs, followed by a three-step thinning process and copper damascene patterning to form inter-wafer interconnects. Daisy-chain inter-wafer via test structures and compatibility of the process steps with 130 nm CMOS sal devices and circuits indicate the viability of the process flow. Such 3D integration with through-die vias enables high functionality in intelligent wireless terminals, as vertical integration of processor, large memory, image sensors and RF/microwave transceivers can be achieved with silicon-based ICs (Si CMOS and/or SiGe BiCMOS). Two examples of such capability are highlighted: memory-intensive Si CMOS digital processors with large L2 caches and SiGe BiCMOS pipelined A/D converters. A comparison of wafer-level 3D integration 'lith system-on-a-chip (SoC) and system-in-a-package (SiP) implementations is presented.

Wafer-Level Three-Dimensional Monolithic Integration for Intelligent Wireless Terminals

R.J.Gutmann,A.Y.Zeng,S.Devarajan,J.-Q.Lu,K.Rose 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.3

A three-dimensional (3D) IC technology platform is presented for high-performance. low-cost heterogeneous integration of silicon ICs. The platform uses dielectric adhesive bonding of fully-processed wafer-to-safer aligned ICs, followed by a three-step thinning process and copper damascene patterning to form inter-wafer interconnects. Daisy-chain inter-nafer via test structure, and compatibility of the proce.. .teps "ith 130 nm CMOS SOl devices and circuits indicate the viability of the process flow. Such 3D integration with through-die vias enables high functionality in intelligent wfireless terminalss as vertical integration of processor, large memors, image sensors and RF/microwawe transceiwers can be achieved with silicon-based ICs (Si CMOS and/or SiCe BiCMOS). Two esamples of such capability are<br/> highlighted memory-intenshe Si CCYIOS digital<br/> processors with large L2 caches and SiGe BiCMS pipelined A/D converters. A comparison of wafer-level 3D integration with system-on-a-chip (SoC) and system-in-a-package (SiP) implementations is presented.<br/> Index Terms-3D Integration, wafer bonding, intelligent wireless terminal, memory-intensive digital processors, pipelined A/D converters<br/>

Templated Organic and Hybrid Materials for Optoelectronic Applications

Haberkorn, Niko,Lechmann, Maria C.,Sohn, Byeong Hyeok,Char, Kookheon,Gutmann, Jochen S.,Theato, Patrick WILEY-VCH Verlag 2009 Macromolecular Rapid Communications Vol.30 No.14

<P>The review highlights different approaches to template organic materials as well as hybrid materials that find or are expected to find application in optoelectronic devices. The first templating approach focuses on the use of preformed nanoporous membranes as templates for organic materials and polymeric materials. Such nanoporous templates can be track-etched membranes, anodic aluminum oxide membranes and other variants thereof, or block copolymer templates. Further, opals have been described as templates. In the second part, we have summarized developments that take advantage of self-assembly processes to pattern hybrid materials. Examples are sol-gel templating techniques using amphiphiles, evaporation-induced self-assembly, lyotropic templating as well as templating from block copolymers. Both routes are very promising templating approaches for optoelectronic materials and represent complementary rather than competing techniques.</P><P> <img src='wiley_img/10221336-2009-30-14-MARC200900213-gra001.gif' alt='wiley_img/10221336-2009-30-14-MARC200900213-gra001'> </P> <B>Graphic Abstract</B> <P>This review compiles different approaches to template organic materials as well as hybrid materials that find application in optoelectronic devices. Two templating approaches are presented and discussed in detail, e.g. the use of preformed nanoporous membranes as templates for organic materials, and self-assembly processes of materials to pattern hybrid materials. Both routes are very promising templating approaches for optoelectronic materials and represent complementary rather than competing techniques. <img src='wiley_img/10221336-2009-30-14-MARC200900213-content.gif' alt='wiley_img/10221336-2009-30-14-MARC200900213-content'> </P>

저유전체 고분자 접착 물질을 이용한 웨이퍼 본딩을 포함하는 웨이퍼 레벨 3차원 집적회로 구현에 관한 연구

Kwon, Yongchai,Seok, Jongwon,Lu, Jian-Qiang,Cale, Timothy,Gutmann, Ronald 한국화학공학회 2007 Korean Chemical Engineering Research(HWAHAK KONGHA Vol. No.

웨이퍼 레벨(WL) 3차원(3D) 집적을 구현하기 위해 저유전체 고분자를 본딩 접착제로 이용한 웨이퍼 본딩과, 적층된 웨이퍼간 전기배선 형성을 위해 구리 다마신(damascene) 공정을 사용하는 방법을 소개한다. 이러한 방법을 이용하여 웨이퍼 레벨 3차원 칩의 특성 평가를 위해 적층된 웨이퍼간 3차원 비아(via) 고리 구조를 제작하고, 그 구조의 기계적, 전기적 특성을 연속적으로 연결된 서로 다른 크기의 비아를 통해 평가하였다. 또한, 웨이퍼간 적층을 위해 필수적인 저유전체 고분자 수지를 이용한 웨이퍼 본딩 공정의 다음과 같은 특성 평가를 수행하였다. (1) 광학 검사에 의한 본딩된 영역의 정도 평가, (2) 면도날(razor blade) 시험에 의한 본딩된 웨이퍼들의 정성적인 본딩 결합력 평가, (3) 4-점 굽힘시험(four point bending test)에 의한 본딩된 웨이퍼들의 정량적인 본딩 결합력 평가. 본 연구를 위해 4가지의 서로 다른 저유전체 고분자인 benzocyclobutene(BCB), Flare, methylsilsesquioxane(MSSQ) 그리고 parylene-N을 선정하여 웨이퍼 본딩용 수지에 대한 적합성을 검토하였고, 상기 평가 과정을 거쳐 BCB와 Flare를 1차적인 본딩용 수지로 선정하였다. 한편 BCB와 Flare를 비교해 본 결과, Flare를 이용하여 본딩된 웨이퍼들이 BCB를 이용하여 본딩된 웨이퍼보다 더 높은 본딩 결합력을 보여주지만, BCB를 이용해 본딩된 웨이퍼들은 여전히 칩 back-end-of-the-line (BEOL) 공정조건에 부합되는 본딩 결합력을 가지는 동시에 동공이 거의 없는 100%에 가까운 본딩 영역을 재현성있게 보여주기 때문에 본 연구에서는 BCB가 본딩용 수지로 더 적합하다고 판단하였다. A technology platform for wafer-level three-dimensional integration circuits (3D-ICs) is presented, and that uses wafer bonding with low-k polymeric adhesives and Cu damascene inter-wafer interconnects. In this work, one of such technical platforms is explained and characterized using a test vehicle of inter-wafer 3D via-chain structures. Electrical and mechanical characterizations of the structure are performed using continuously connected 3D via-chains. Evaluation results of the wafer bonding, which is a necessary process for stacking the wafers and uses low-k dielectrics as polymeric adhesive, are also presented through the wafer bonding between a glass wafer and a silicon wafer. After wafer bonding, three evaluations are conducted; (1) the fraction of bonded area is measured through the optical inspection, (2) the qualitative bond strength test to inspect the separation of the bonded wafers is taken by a razor blade, and (3) the quantitative bond strength is measured by a four point bending. To date, benzocyclobutene (BCB), $Flare^{TM}$, methylsilsesquioxane (MSSQ) and parylene-N were considered as bonding adhesives. Of the candidates, BCB and $Flare^{TM}$ were determined as adhesives after screening tests. By comparing BCB and $Flare^{TM}$, it was deduced that BCB is better as a baseline adhesive. It was because although wafer pairs bonded using $Flare^{TM}$ has a higher bond strength than those using BCB, wafer pairs bonded using BCB is still higher than that at the interface between Cu and porous low-k interlevel dielectrics (ILD), indicating almost 100% of bonded area routinely.

Organotextile Catalysis

Lee, Ji-Woong,Mayer-Gall, Thomas,Opwis, Klaus,Song, Choong Eui,Gutmann, Jochen Stefan,List, Benjamin American Association for the Advancement of Scienc 2013 Science Vol.341 No.6151

<P><B>Catalytic Parachute</B></P><P>Small organic molecules have emerged as catalysts as versatile as transition metal complexes. However, industrial application of such organocatalysts has been hampered by technical challenges. Now <B>Lee <I>et al.</I></B> (p. 1225) have succeeded in tethering a diverse set of high-performance organocatalysts to nylon fabric through ultraviolet photochemistry, making them easy to isolate and reuse.</P>

BCB 수지로 본딩한 웨이퍼의 본딩 결합력에 관한 연구

Kwon, Yongchai,Seok, Jongwon,Lu, Jian-Qiang,Cale, Timothy,Gutmann, Ronald 한국화학공학회 2007 Korean Chemical Engineering Research(HWAHAK KONGHA Vol. No.

BCB 수지를 이용하여 본딩한 웨이퍼의 BCB 두께, 본딩 촉진제의 사용여부 및 이웃하는 적층 물질의 종류에 따른 본딩 결합력에 대한 영향을 4-점 굽힘방법을 이용하여 규명한다. 실험결과 본딩 결합력은 BCB 두께에 선형 비례하는데, 이는 BCB의 소성 변형의 정도가 두께에 비례하는 반면에 BCB의 항복 강도에는 영향을 미치지 않기 때문이다. 본딩한 BCB의 두께가 각각 $2.6{\mu}m$ 및 $0.4{\mu}m$인 경우에 대하여 본딩 촉진제를 사용 했을 때, 본딩 촉진제와 본딩된 물질의 표면에서는 공유 결합이 형성되기 때문에 본딩 결합력이 증가한다. 산화 규소막이 증착된 실리콘 웨이퍼와 BCB 사이 계면에서의 본딩 결합력은 글래스 웨이퍼와 BCB 사이의 계면에서 보다 약 3배 정도 높다. 이러한 본딩 결합력의 차이는 각 계면에서 Si-O 본드의 본딩 밀도 및 본드 파단 에너지의 차이에 기인한다. PECVD 산화 규소막을 증착한 실리콘 웨이퍼와 BCB 사이 계면의 경우, 기 측정된 $18J/m^2$ 및 $22J/m^2$의 본드 파단 에너지를 얻기 위해 각각 약 $12{\sim}13bonds/nm^2$ 및 $15{\sim}16bonds/nm^2$의 Si-O 본드 밀도가 필요하다. 반면에, 글래스 웨이퍼와 BCB 사이 계면의 경우에는 기 측정된 $5J/m^2$의 본드 파단 에너지를 얻기 위해 약 $7{\sim}8bonds/nm^2$의 Si-O 본드 밀도가 필요하다. Four point bending is used to study the dependences of bond strength of benzocyclobutene(BCB) bonded wafers and BCB thickness, the use of an adhesion promoter, and the materials being bonded. The bond strength depends linearly on BCB thickness, due to the thickness-dependent contribution of the plastic dissipation energy of the BCB and thickness independence of BCB yield strength. The bond strength increases by about a factor of two with an adhesion promoter for both $2.6{\mu}m$ and $0.4{\mu}m$ thick BCB, because of the formation of covalent bonds between adhesion promoter and the surface of the bonded materials. The bond strength at the interface between a silicon wafer with deposited oxide and BCB is about a factor of three higher than that at the interface between a glass wafer and BCB. This difference in bond strength is attributed to the difference in Si-O bond density at the interfaces. At the interfaces between plasma enhanced chemical vapor deposited (PECVD) oxide coated silicon wafers and BCB, and between thermally grown oxide on silicon wafers and BCB, 12~13 and $15{\sim}16bonds/nm^2$ need to be broken. This corresponds to the observed bond energies, $G_0s$, of 18 and $22J/m^2$, respectively. Maximum 7~8 Si-O $bonds/nm^2$ are needed to explain the $5J/m^2$ at the interfaces between glass wafers and BCB.

Shape and anatomical relationship of the mental foramen to the mandibular premolars in an Indian sub-population: a retrospective CBCT analysis

Sheth Komal,Banga Kulvinder Singh,Pawar Ajinkya M.,Gutmann James L.,Kim Hyeon-Cheol 대한치과보존학회 2022 Restorative Dentistry & Endodontics Vol.47 No.1

Objectives This study assessed the shape and anatomical relationship of the mental foramen (MF) to mandibular posterior teeth in an Indian sub-population. Materials and Methods In total, 475 existing cone-beam computed tomography records exhibiting 950 MFs and including the bilateral presence of mandibular premolars and first molars were assessed. Images were evaluated 3-dimensionally to ascertain the position, shape, and anatomical proximity of MFs to mandibular teeth. The position and shape of MFs were measured and calculated. The Pythagorean theorem was used to calculate the distance between the root apex of the mandibular teeth and the MF. Results MFs exhibited a predominantly round shape (left: 67% and right: 65%) followed by oval (left: 30% and right: 31%) in both males and females and in different age groups. The root apices of mandibular second premolars (left: 71% and right: 62%) were closest to the MF, followed by distal to the first premolars and mesial to the second premolars. The mean vertical distance between the MF and the nearest tooth apex calculated on sagittal sections was 2.20 mm on the right side and 2.32 mm on the left side; no significant difference was found according to sex or age. The distance between the apices of the teeth and the MF was ≥ 4 mm (left; 4.09 ± 1.27 mm and right; 4.01 ± 1.15 mm). Conclusions These findings highlight the need for clinicians to be aware of the location of the MF in treatment planning and while performing non-surgical and surgical endodontic procedures. Objectives This study assessed the shape and anatomical relationship of the mental foramen (MF) to mandibular posterior teeth in an Indian sub-population. Materials and Methods In total, 475 existing cone-beam computed tomography records exhibiting 950 MFs and including the bilateral presence of mandibular premolars and first molars were assessed. Images were evaluated 3-dimensionally to ascertain the position, shape, and anatomical proximity of MFs to mandibular teeth. The position and shape of MFs were measured and calculated. The Pythagorean theorem was used to calculate the distance between the root apex of the mandibular teeth and the MF. Results MFs exhibited a predominantly round shape (left: 67% and right: 65%) followed by oval (left: 30% and right: 31%) in both males and females and in different age groups. The root apices of mandibular second premolars (left: 71% and right: 62%) were closest to the MF, followed by distal to the first premolars and mesial to the second premolars. The mean vertical distance between the MF and the nearest tooth apex calculated on sagittal sections was 2.20 mm on the right side and 2.32 mm on the left side; no significant difference was found according to sex or age. The distance between the apices of the teeth and the MF was ≥ 4 mm (left; 4.09 ± 1.27 mm and right; 4.01 ± 1.15 mm). Conclusions These findings highlight the need for clinicians to be aware of the location of the MF in treatment planning and while performing non-surgical and surgical endodontic procedures.

Surface Coatings Based on Polysilsesquioxanes: Solution-Processible Smooth Hole-Injection Layers for Optoelectronic Applications

Kessler, Daniel,Lechmann, Maria C.,Noh, Seunguk,Berger, Rü,diger,Lee, Changhee,Gutmann, Jochen S.,Theato, Patrick WILEY-VCH Verlag 2009 Macromolecular rapid communications Vol.30 No.14

<P>Optoelectronic devices usually consist of a transparent conductive oxide (TCO) as one electrode. Interfacial engineering between the TCO electrode and the overlying organic layers is an important method for tuning device performance. We introduce poly(methylsilsesquioxane)–poly(N,N-di-4-methylphenylamino styrene) (PMSSQ–PTPA) as a potential hole-injection layer forming material. Spin-coating and thermally induced crosslinking resulted in an effective planarization of the anode interface. HOMO level (−5.6 eV) and hole mobility (1 × 10<SUP>−6</SUP> cm<SUP>2</SUP> · Vs<SUP>−1</SUP>) of the film on ITO substrates were measured by cyclovoltammetry and time-of-flight measurement demonstrating the hole injection capability of the layer. Adhesion and stability for further multilayer built-up could be demonstrated. Contact angle measurements and tape tests after several solvent treatments proved the outstanding film stability.</P><P> <img src='wiley_img/10221336-2009-30-14-MARC200900196-gra001.gif' alt='wiley_img/10221336-2009-30-14-MARC200900196-gra001'> </P> <B>Graphic Abstract</B> <P>Poly(methylsilsesquioxane)–poly(N,N-di-4-methylphenylamino styrene) (PMSSQ–PTPA) as potential hole-injection layer (HIL) forming material was used for effective planarization of the anode interface. The obtained HIL showed high stability and adhesion even after several solvent treatments. <img src='wiley_img/10221336-2009-30-14-MARC200900196-content.gif' alt='wiley_img/10221336-2009-30-14-MARC200900196-content'> </P>

미립자공학,유동충,고분자,재료(무기, 유기) : BCB 수지로 본딩한 웨이퍼의 본딩 결합력에 관한 연구

권용재 ( Yong Chai Kwon ),석종원 ( Jong Won Seok ),( Jian Qiang Lu ),( Timothy Cale ),( Ronald Gutmann ) 한국화학공학회 2007 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.45 No.5