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PRESSURE DEPENDENCE OF THE CURIE TEMPERATURE IN MnAlGe
S. Endo,H. Matsuzaki,F. Ono,T. Kanomata,T. Kaneko 한국자기학회 1995 韓國磁氣學會誌 Vol.5 No.5
The pressure dependence of the Curie temperature was determined in 2dimensional like ferromagnet, MnAlGe up to a maximum pressure of 7.5 ㎬ through measurements of electric resistance vs temperature curves. The pressure coefficient was positive with a considerably high rate of 9 K/㎬ in the low pressure ragion, while it decreased gradually down to one order of magnitude smaller value at the maximum pressure. It was concluded that ther is an upper limit of about 550 K in the super-exchange type ferromagnetic interaction between Mn layers.
Measurements of charge exchange neutral particles in Heliotron J
masashi Kaneko,F. Sano,H. Okada,K. Hanatani,K. Nagasaki,K. Kondo,S. Kobayashi,S. Murakami,T. Mizuuchi,Y. Suzuki,Y. Nakamura 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.III
The ion behavior in Heliotron J plasmas is investigated through measurements of the ion energy distribution function, which is measured with a charge-exchange neutral particle analyzer system. The bulk ion temperature is estimated from the measured energy spectrum. In NBI heated plasma, the pitch angle distribution of energy spectra is measured. Dependence of the high energy tail and bulk ion temperature of injection power is investigated in an ion-cyclotron range of frequency heating experiment.)
hajime Arimoto,F. Sano,G. Motojima,H. Yamazaki,H. Nakamura,H. Yabutani,H. Kitagawa,H. Okada,J. Arakawa,K. Kondo,K. Ohashi,K. Nagasaki,M. Yamada,M. Uno,M. Kikutake,M. Kaneko,N. Watanabe,N. Nishino,N. S 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.III
The measurement of D, CII and CIII line spectral profiles and the CD band spectrum from the vicinity of a test limiter surface is performed in Heliotron J test limiter experiments. With deep insertion of the limiter, there is a localized intense region of the D, CII and CIII line intensity in the limiter surface, and the CD band spectrum is observed at this region. It is considered that the deuterium ion flux and heat load concentrate at this region and enhance carbon impurity generation.r_che
Configuration Dependence of Toroidal Current in Heliotron J
gen Motojima,F. Sano,H. Yabutani,H. Okada,H. Nakamura,H. Arimoto,H. Kitagawa,H. Yamazaki,K. Kondo,K. Nagasaki,K. Hanatani,K.Y. Watanabe,M. Kaneko,M. Uno,S. Fujikawa,S. Watanabe,S. Yamamoto,S. Kobayash 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.III
A change of toroidal current by controlling the magnetic configuration has been observed in Heliotron J. The effect of the magnetic configuration on the neoclassical bootstrap current has been theoretically investigated for Heliotron J. It is found that the bumpy field component (B04) plays an important role in changing both the value and the direction of the bootstrap current in Heliotron J. The bootstrap current density is reversed at the small minor radius first, and then the net bootstrap current changes its direction from a positive value to a negative value as B04 decreases.
Characteristics of Carrier-generated Field-effect Transistors with Pentacene/Vanadium Pentoxide
M. Minagawa,K. Nakai,A. Baba,K. Shinbo,K. Kato,F. Kaneko,이천 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.51
In this paper, the driving mechanism of carrier-generated organic field-effect transistors (OFETs) with pentacene and vanadium pentoxide (V_2O_5) layers is discussed. In this study, large on-currents were observed in an OFET with a 35-nm V_2O_5 layer. Devices with aluminum (Al)/pentacene/V_2O_5/Al layer structures were also prepared. These devices exhibited a large current density in spite of their high carrier injection barriers between each layer and the Al electrodes. Moreover, new absorption bands corresponding to the radical cation absorption of pentacene were observed within the absorption spectrum of the pentacene and V_2O_5 mixed layers. It was inferred that the charge transfer (CT) complexes that formed at the interface between the pentacene and V_2O_5 layers were dissociated by the applied gate voltage and that the generated holes contributed to driving the OFETs.