http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Uniformity Improvement of the Ion Implantation System for Low Temperature Poly-Silicon TFTs
Toshiharu Suzuki,Eiji Isobe,Hirohiko Murata,Kazuya Yoshida,Kouji Inada,Masateru Sato,Tatsuo Nishihara 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
Performance of the an ion-implantation system for low-temperature poly-Si TFT was improved to meet various requirements for fabrication of high-quality LCD and OLED displays. With the unique inductively coupled plasma ion source, the deviation of ion beam current density was reduced to less than 3 %; 1 over 730 × 920 mm substrate. The “mini”-uniformity in a display panel was also improved by optimizing the ion beam extraction electrodes.
Pressure-induced Metal-insulator Transition of the Mott Insulator Ba2IrO4
Daisuke Orii,Masafumi Sakata,Atsushi Miyake,Katsuya Shimizu,Hirotaka Okabe,Masaaki Isobe,Eiji Takayama-Muromachi,Jun Akimitsu 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.3
The electrical resistivity of single crystals of the spin-orbit Mott insulator Ba2IrO4 has beenmeasured at pressures up to 30 GPa and at temperatures from 100 mK to 300 K. Ba2IrO4 showsa metal-insulator transition at around Pc = 24 GPa, though it does not show superconductivitydown to 100 mK. The low-temperature resistivity in the metallic state does not obey a conventionalFermi-liquid description. This suggests that carriers are incoherently scattered by antiferromagneticquantum spin fluctuations. The critical exponent for the metal-insulator transition is about 1.6,indicating that Ba2IrO4 is located near the boundary between a Mott and an Anderson insulator. This means that even in a single crystal, the effect of crystallographic disorder should not be ignored.