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- 검색키워드
- 저자 : CHUNHONG ZHOU (검색결과 6 건)
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The Changes of Proteomes Components of Helicobacter pylori in Response to Acid Stress without Urea
Chunhong Shao,Qunye Zhang,Wei Tang,Wei Qu,Yabin Zhou,Yundong Sun,Han Yu,Jihui Jia 한국미생물학회 2008 The journal of microbiology Vol.46 No.3
Acid stress is the most obvious challenge Helicobacter pylori encounters in human stomach. The urease system is the basic process used to maintain periplasmic and cytoplasmic pH near neutrality when H. pylori is exposed to acidic condition. However, since the urea concentration in gastric juice is approximately 1 mM, considered possibly insufficient to ensure the survival of H. pylori, it is postulated that additional mechanisms of pH homeostasis may contribute to the acid adaptation in H. pylori. In order to identify the acid-related proteins other than the urease system we have compared the proteome profiles of H. pylori strain 26695 exposed to different levels of external pH (7.4, 6.0, 5.0, 4.0, 3.0, and 2.0) for 30 min in the absence of urea using 2-DE. Differentially expressed proteins were identified by MALDI-TOF-TOF-MS analysis, which turned out to be 36 different proteins. The functions of these proteins included ammonia production, molecular chaperones, energy metabolism, cell envelope, response regulator and some proteins with unknown function. SOM analysis indicated that H. pylori responds to acid stress through multi-mechanisms involving many proteins, which depend on the levels of acidity the cells encounter.
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Helicobacter pylori Proteins Response to Nitric Oxide Stress
Wei Qu,Yabin Zhou,Chunhong Shao,Yundong Sun,Qunye Zhang,Chunyan Chen,Jihui Jia 한국미생물학회 2009 The journal of microbiology Vol.47 No.4
Helicobacter pylori is a highly pathogenic microorganism with various strategies to evade human immune responses. Nitric oxide (NO) and reactive nitrogen species (RNS) generated via nitric oxide synthase pathway are important effectors during the innate immune response. However, the mechanisms of H. pylori to survive the nitrosative stress are not clear. Here the proteomic approach has been used to define the adaptive response of H. pylori to nitrosative stress. Proteomic analysis showed that 38 protein spots were regulated by NO donor, sodium nitroprusside (SNP). These proteins were involved in protein processing, antioxidation, general stress response, and virulence, as well as some unknown functions. Particularly, some of them were participated in iron metabolism, potentially under the control of ferric uptake regulator (Fur). Real time PCR revealed that fur was induced under nitrosative stress, consistent with our deduction. One stress-related protein up-regulated under nitrosative conditions was thioredoxin reductase (TrxR). Inactivation of fur or trxR can lead to increased susceptivity to nitrosative stress respectively. These studies described the adaptive response of H. pylori to nitric oxide stress, and analyzed the relevant role of Fur regulon and TrxR in nitrosative stress management.
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Modelling and Prediction of Stress Relaxation for Thermal Bonded Nonwoven Geotextiles
Shiyuan Sun,Xiaoping Gao,Chunhong Fu,Yudong Zhou,Xiaoying Wei,Jiaxin Li,Yiping Qiu 한국섬유공학회 2020 Fibers and polymers Vol.21 No.7
Stress relaxation experiments were performed on three types of thermal bonded nonwoven geotextiles in this studyto model and predict their stress relaxation behaviors. Four mechanical models, including the standard linear solid mechanicsmodel, Eyring’s model, the modified two-Maxwell-unit model and the modified three-Maxwell-unit model were used topredict stress values for 600 h based on 3 and 90 h experimental relaxation data. Results indicated that Eyring’s model and themodified three-Maxwell-unit model fitted the experimental results better than the other two. Estimation using modified three-Maxwell-unit model seemed to construct an upper bound while that using Eyring’s model form a lower bound for thecorresponding experimental data. In addition, predicted curves were much closer to the experimental curve when equationsof the two models were built with the 90 h experimental data than those data of 3 h. Thus, the prediction capability of the twomodels can be substantially improved by employing the data with longer time. In summary, the combination of the modifiedthree-Maxwell-unit model and Eyring’s model can well forcast the range of actual stress during stress relaxation experimentswith the longer term experimental data.
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Dependence of Dishing on Fluid Pressure during Chemical Mechanical Polishing
C. Fred Higgs,Sum Huan Ng,Chunhong Zhou,Inho Yoon,Robert Hight,Zhiping Zhou,LipKong Yap,Steven Danyluk 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
Chemical mechanical polishing (CMP) is a manufacturing process that uses controlled wear to planarize dielectric and metallic layers on silicon wafers. CMP experiments revealed that a sub-ambient film pressure developed at the wafer/pad interface. Additionally, dishing occurs in CMP processes when the copper-in-trench lines are removed at a rate higher than the barrier layer. In order to study dishing across a stationary wafer during polishing, dishing maps were created. Since dishing is a function of the total contact pressure resulting from the applied load and the fluid pressure, the hydrodynamic pressure model was refined and used in an existing model to study copper dishing. Density maps, highlighting varying levels of dishing across the wafer face at different radial positions, were developed. This work will present the results.
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Dishing and Erosion in Chemical Mechanical Polishing of Electroplated Copper
INHO YOON,SUM HUAN NG,ROBERT HIGHT,CHUNHONG ZHOU,C. FRED HIGGS,LILY YAO,STEVEN DANYLUK 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries; and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.
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Silicon/Pad Pressure Measurements During Chemical Mechanical Polishing
STEVEN DANYLUK,GARY NG,INHO YOON,FRED HIGGS,CHUNHONG ZHOU 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
Chemical mechanical polishing refers to a process by which silicon and partially-processed integrated circuits (IC's) built on silicon substrates are polished to produce planar surfaces for the continued manufacturing of IC's. Chemical mechanical polishing is done by pressing the silicon wafer, face down, onto a rotating platen that is covered by a rough polyurethane pad. During rotation, the pad is flooded with a slurry that contains nanoscale particles. The pad deforms and the roughness of the surface entrains the slurry into the interface. The asperities contact the wafer and the surface is polished in a three-body abrasion process. The contact of the wafer with the "soft" pad produces a unique elastohydrodynamic situation in which a suction force is imposed at the interface. This added force is non-uniform and can be on the order of the applied pressure on the wafer. We have measured the magnitude and spatial distribution of this suction force. This force will be described within the context of a model of the sliding of hard surfaces on soft substrates.
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