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Dishing and Erosion in Chemical Mechanical Polishing of Electroplated Copper
INHO YOON,SUM HUAN NG,ROBERT HIGHT,CHUNHONG ZHOU,C. FRED HIGGS,LILY YAO,STEVEN DANYLUK 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries; and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.
Dependence of Dishing on Fluid Pressure during Chemical Mechanical Polishing
C. Fred Higgs,Sum Huan Ng,Chunhong Zhou,Inho Yoon,Robert Hight,Zhiping Zhou,LipKong Yap,Steven Danyluk 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
Chemical mechanical polishing (CMP) is a manufacturing process that uses controlled wear to planarize dielectric and metallic layers on silicon wafers. CMP experiments revealed that a sub-ambient film pressure developed at the wafer/pad interface. Additionally, dishing occurs in CMP processes when the copper-in-trench lines are removed at a rate higher than the barrier layer. In order to study dishing across a stationary wafer during polishing, dishing maps were created. Since dishing is a function of the total contact pressure resulting from the applied load and the fluid pressure, the hydrodynamic pressure model was refined and used in an existing model to study copper dishing. Density maps, highlighting varying levels of dishing across the wafer face at different radial positions, were developed. This work will present the results.