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Epitaxial Growth of ZnO Films Prepared by Using MO-CVD with Zn(C9H15O3)₂
K. Haga,T. Chiba,H. Onodera,T. Kadota,C. Hasegawa 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
High-quality ZnO epitaxial lms with highly at surface were successfully prepared by using low-pressure metal-organic chemical-vapor deposition (MO-CVD) with Zn(C9H15O3)2 as a new liquid-phase source material. The crystal structures were characterized by using X-ray diraction and re ection high-energy electron diraction (RHEED) analysis. The surface morphology was evaluated by means of atomic force microscopy. Single-crystal ZnO (1120) lms were epitaxially grown on the (0112) plains of sapphire substrates. The RHEED patterns for the surfaces of the ZnO (1120) lms exhibited sharp streaky patterns with Kikuchi lines. The present ZnO lms had surface morphologies as excellent as those of lms that had been prepared well by using molecular beam epitaxy. High-quality ZnO epitaxial lms with highly at surface were successfully prepared by using low-pressure metal-organic chemical-vapor deposition (MO-CVD) with Zn(C9H15O3)2 as a new liquid-phase source material. The crystal structures were characterized by using X-ray diraction and re ection high-energy electron diraction (RHEED) analysis. The surface morphology was evaluated by means of atomic force microscopy. Single-crystal ZnO (1120) lms were epitaxially grown on the (0112) plains of sapphire substrates. The RHEED patterns for the surfaces of the ZnO (1120) lms exhibited sharp streaky patterns with Kikuchi lines. The present ZnO lms had surface morphologies as excellent as those of lms that had been prepared well by using molecular beam epitaxy.
Humayra Afroze Syeda,Hasegawa Yuki,Nomura Izumi,Chang Young C.,Sato Takeshi,Takamizawa Kazuhiro The Korean Society for Biotechnology and Bioengine 2005 Biotechnology and Bioprocess Engineering Vol.10 No.1
Clostridium bifermentans strain DPH-1 has already been found to dechlorinate perchloroethylene (PCE) to cis-dichloroethylene (cis-DCE) via trichloroethylene (TCE). In this study, our investigation on different culture conditions of this DPH-1 strain was extended to find a more efficient and cost effective growth medium composition for this DPH-1 strain in bioremediation practices. Temperature dependency of strain DPH-1 showed that the growth starting time and PCE degradation at $15^{\circ}C$ was very slow compared to that of $30^{\circ}C$, but complete PCE degradation occurred in both cases. For the proper utilization of strain DPH-1 in more cost effective bioremediation practices, a simpler composition of an effective media was studied. One component of the culture medium, yeast extract, had been substituted by molasses, which served as a good source of electron donor. The DPH-1 strain in the medium containing molasses, in the presence of $K_{2}HPO_4\;and\;KH_{2}PO_4$, showed identical bacterial multiplication (0.135 mg protein $mL^{-1}h^{-1}$) and PCE degradation rates ($0.38\;{\mu}M/h$) to those of the yeast extract containing medium.
저에너지 양전자 소멸 분광법을 이용한 MgB<sub>2</sub> 박막 구조 특성
Lee, C.Y.,Kang, W.N.,Nagai, Y.,Inoue, K.,Hasegawa, M. 한국진공학회 2008 Applied Science and Convergence Technology Vol.17 No.2
저속 에너지 도플러 넓어짐 양전자 소멸 분광법으로 $MgB_2$ 박막내의 원자 크기 정도 고체 구조 특성에 대하여 조사하였다. 양전자와 전자의 쌍소멸로 발생하는 511keV 감마선 스펙트럼의 수리적 해석 방법인 S-변수를 사용하여, 상전이 근처 온도에서 박막의 구조 변화를 측정하였다. 비등방성 구조로 된 $MgB_2$ 박막에서 초전도 특성을 갖는 상전이 온도 근처에서 S-변수를 측정하였다. 양전자의 입사 에너지 10keV에서 측정된 S-변수의 최고치는 박막의 온도가 30K에서 0.567이고, 50 K에서는 0.570로 큰 변화는 없었다. 이 결과로부터 양전자가 Boron 층의 초 전자와 소멸하기 보다는 Mg층 근처의 상 전자와 소멸하는 것으로 판단된다. $MgB_2$의 박막의 외층은 Mg층으로 이루어졌다고 할 수 있다. The Characterization of $MgB_2$ Thin Film by Slow Positron Annihilation Spectroscopy Enhance signal-to-noise ratio, slow positron coincidence Doppler Broadening method has been applied to study of characteristics of $MgB_2$ superconductor film, which were performed at 30 K and 50 K sample temperature near Tc of it. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The S-parameter values were increased then decreased while the positron implantation energies were increasing, that indicated the diffusion into the samples. The S-parameters of the anisotropic 1 ${\mu}m$ $MgB_2$ thin film which were implanted by positrons at 10 keV are 0.567 at 30 K and 0.570 at 50 K. It is believed that the positrons annihilate with normal-electrons instead of super-electrons in the $MgB_2$ superconductor.
Liu, C.,Liu, X.,Xu, Y.,Sun, H.,Li, Y.,Shi, Y.,Lee, M.,Yamada, T.,Hasegawa, T.,Noh, Y. Y. Royal Society of Chemistry 2017 Polymer Chemistry Vol.4 No.2
<P>The wetting of a droplet on a particular solid surface of a thin liquid film followed by solvent drying is a crucial process for nanostructure formation. However, this thin liquid film was commonly observed to rupture due to the instability of the given surface. Herein, we developed a technique to control the dynamical kinetics of a solution droplet by the co-solvent vapor, which yielded a reversible spreading/dewetting process between the spherical droplet and the stable thin liquid layer on surfaces that are usually difficult to wet. Our theoretical model indicates that the wetting process is governed by the sorption of co-solvent vapor within the droplet, which alters the surface free energy, lowers the contact angle, reduces the liquid film thickness, and stabilizes the drying process. The obtained thin liquid films allow the in-plane alignment to generate one-dimensional nano- or micro-structures in the deposited materials, such as nano-wires and organic crystals. In particular, in-plane aligned organic single crystals unveiled high field-effect mobility, up to 9.1 cm(2) V-1 s(-1), in thin-film transistors.</P>
저에너지 양전자 소멸 분광법을 이용한 MgB₂ 박막 구조 특성
이종용(C. Y. Lee),강원남(W. N. Kang),M. Hasegawa,Y. Nagai,K. Inoue 한국진공학회(ASCT) 2008 Applied Science and Convergence Technology Vol.17 No.2
저속 에너지 도플러 넓어짐 양전자 소멸 분광법으로 MgB₂ 박막내의 원자 크기 정도 고체 구조 특성에 대하여 조사하였다. 양전자와 전자의 쌍소멸로 발생하는 511keV 감마선 스펙트럼의 수리적 해석 방법인 S-변수를 사용하여, 상전이 근처 온도에서 박막의 구조 변화를 측정하였다. 비등방성 구조로 된 MgB₂ 박막에서 초전도 특성을 갖는 상전이 온도 근처에서 S-변수를 측정하였다. 양전자의 입사 에너지 10keV에서 측정된 S-변수의 최고치는 박막의 온도가 30K에서 0.567이고, 50 K에서는 0.570로 큰 변화는 없었다. 이 결과로부터 양전자가 Boron 층의 초 전자와 소멸하기 보다는 Mg층 근처의 상 전자와 소멸하는 것으로 판단된다. MgB₂의 박막의 외층은 Mg층으로 이루어졌다고 할 수 있다. Enhance signal-to-noise ratio, slow positron coincidence Doppler Broadening method has been applied to study of characteristics of MgB₂ superconductor film, which were performed at 30 K and 50 K sample temperature near Tc of it. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The S-parameter values were increased then decreased while the positron implantation energies were increasing, that indicated the diffusion into the samples. The S-parameters of the anisotropic 1 ㎛ MgB₂ thin film which were implanted by positrons at 10 keV are 0.567 at 30 K and 0.570 at 50 K. It is believed that the positrons annihilate with normal-electrons instead of super-electrons in the MgB₂ superconductor.