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Y.M. Choi,B.J. Park,D.H. Kim,D.I. Kim,D.S. Hwang,H. K. Hwang,H.J. Kim,H.S. Kim,I.B. Chung,J.M. Park,J.W. Lee,J.Y. Kim,Kinam Kim,M.H. Jo,정문영,N.J. Kang,S.E. Kim,Y.J. Park,Y.S. Hwang 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.1
Full integration of a 512-Mb dynamic random access memory (DRAM) using both a raised sourcedrain (S/D) in a cell and a support area with additional Co silicidation in the support area is successfully performed for the first time at an 88-nm technology node. The Co-silicided support transistors in the DRAM circuit can be made by using the silicidation-blocking-layer method which keeps the cell array from silicidation. Raised S/D transistors using Si selective epitaxial growth (SEG) demonstrate good short-channel eect (SCE) immunity and a Co-silicided S/D in the support transistors exhibits an excellent current driving capability and reduced S/D sheet resistance, even for very small dimensions.
김동준,정종문,김정현,황하청,정재윤,조윤희,임현교,구제환,최은하,조광섭,Jin, D.J.,Jeong, J.M.,Kim, J.H.,Hwang, H.C.,Chung, J.Y.,Cho, Y.H.,Lim, H.K.,Koo, J.H.,Choi, E.H.,Cho, G.S. 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.1
관경이 수 mm인 세관 램프 내부에서 플라즈마의 확산을 조사하기 위하여 이극성(ambipolar) 확산방정식을 해하였다. 반경 방향의 확산에 의한 유리관 벽에서의 플라즈마 소멸 특성시간은 $\tau_r\;=\;(r_0/2.4)^2/D_a$로 주어진다. 반경 $r_0{\sim}1\;mm$이고 이극성 확산계수 $D_a{\sim}0.01\;m^2/s$ 이면, $\tau_r{\sim}17\;{\mu}s$이다. 이는 램프의 교류전원 구동에서 플라즈마를 유지하기 위한 구동 최소 주파수 ~30 kHz에 해당한다. 고전압이 인가되는 전극부에 발생한 고밀도의 플라즈마가 양광주로 확산되는 특성시간은 $\tau_z{\sim}0.1\;s$이다. 고밀도 플라즈마 경계에서의 시간에 대한 확산속도는 $t{\sim}10^{-6}\;s$일 때 $u_D{\sim}10^2\;m/s$이고, $t{\sim}10^{-3}\;s$이면 그 속도는 $u_D{\sim}1\;m/s$로 느려진다. 따라서 램프 길이 ~1 m에 대하여 전극부에서 생성된 고밀도 플라즈마가 양광주 전체로 확산되는 시간은 수 초가 걸린다. The ambipolar diffusion equation has been solved in a fine-tube lamp of a few mm in diameter. In the diffusion of radial direction, the plasma diffuses and vanishes away at the glass wall by recombination with the characteristic time of plasma loss is given by $\tau_r\;=\;(r_0/2.4)^2/D_a$. With the radius $r_0{\sim}1\;mm$ and the ambipolar diffusion coefficient $D_a{\sim}0.01\;m^2/s$, the vanishing time is calculated $\tau_r{\sim}10\;{\mu}s$ which corresponds to the least value of frequency 30 kHz for the sustaining the plasma in the operation of high voltage AC-power. In the diffusion of longitudinal z-direction, a high density plasma generated at the area of a high voltage electrode, diffuses into the positive column with the characteristic time $\tau_z{\sim}0.1\;s$. The plasma diffusion velocity at the boundary of high density plasma is $u_D{\sim}10^2\;m/s$ at the time $t{\sim}10^{-6}$ s and the diffusion velocity becomes slow as $u_D{\sim}1\;m/s$ at $t{\sim}10^{-3}\;s$. Therefore, for the long lamp of 1 m, it takes about several seconds for the high density plasma at the area of electrode to diffuse through the whole positive column space.
Hwang, S.M.,Sung, K.,Choi, J.H.,Kim, W.,Joo, J.,Lim, J.H.,Kim, C.J.,Park, Y.S.,Kim, D.H. North-Holland 2010 Physica. C, Superconductivity Vol.470 No.20
We selected polyacrylonitrile (PAN, -[C<SUB>3</SUB>H<SUB>3</SUB>N]-) as an O-free organic dopant and fabricated C-doped MgB<SUB>2</SUB> wires by in situ and powder-in-tube techniques. 0-5 wt.% PAN powders were uniformly mixed with B powder using a liquid mixing method. The precursor powders were mixed with Mg powder, filled into Fe tubes, and then drawn into wires. Sintering was performed at 900<SUP>o</SUP>C for 1h in a flowing Ar gas. The PAN doping decreased the critical temperature (T<SUB>c</SUB>) and a-axis lattice parameter, but significantly improved the critical current density (J<SUB>c</SUB>) in high fields, upper critical field (H<SUB>c2</SUB>), and irreversibility field (H<SUB>irr</SUB>) performances. These results are attributed to the replacement of B sites with C by the PAN doping. Furthermore, as expected, the MgO amount did not increase as the doping content increased. The J<SUB>c</SUB> of the PAN-doped MgB<SUB>2</SUB> wires was more than one order of magnitude higher than that of the undoped MgB<SUB>2</SUB> wire at 5K and 6.6T (1.46-3.82kA/cm<SUP>2</SUP> vs. 0.11kA/cm<SUP>2</SUP>).
Expression of OAT1 and OAT3 in differentiating proximal tubules of the mouse kidney.
Hwang, J-S,Park, E-Y,Kim, W-Y,Yang, C-W,Kim, J Gutenberg 2010 HISTOLOGY AND HISTOPATHOLOGY Vol.25 No.1
<P>Organic anion transporter 1 (OAT1) and OAT3 in the proximal tubules (PT) of the kidney play important roles in the elimination of harmful endogenous compounds and xenobiotics from the body. We investigated the temporal and spatial expression of OAT1 and OAT3 in the differentiating PT in mouse kidney. Ontogenic expression of OAT1 and OAT3 was investigated by immunohistochemical analysis. The S1, S2, and S3 segments of the PT were identified using antibodies to aquaporin 1 (AQP1), Na+-HCO3- cotransporter 1 (kNBC1), and AQP4. OAT1 immunoreactivity was first detected at PT in the inner cortex of 15-day-old fetuses (F15) and in the outer cortex of 7-day old pups. OAT3 was first observed in the distal tubule of F14 and in S2 segment of the PT of F16 and in S1 and S3 segments around the time of birth; expression increased through postpartum day 21. The ontogenic pattern of expression of OAT1 and OAT3 in the differentiating PT suggests that both transporters may function in the S2 segment in the fetus, but not until after birth in S1 and S3 segments.</P>
Kim, S.-Y.,Kim, K.,Hwang, Y. H.,Park, J.,Jang, J.,Nam, Y.,Kang, Y.,Kim, M.,Park, H. J.,Lee, Z.,Choi, J.,Kim, Y.,Jeong, S.,Bae, B.-S.,Park, J.-U. The Royal Society of Chemistry 2016 Nanoscale Vol.8 No.39
<P>As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 mu m) and superb performance, including high mobility (similar to 230 cm(2) V-1 s(-1)). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 degrees C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.</P>
Progress in the development of heating systems towards long pulse operation for KSTAR
Kwak, J.G.,Bae, Y.D.,Chang, D.H.,Chang, D.S.,Hong, B.G.,Hwang, C.K.,In, S.R.,Jeong, S.H.,Jin, J.T.,Jung, K.S.,Kim, B.R.,Kim, J.,Kim, S.K.,Kim, T.S.,Lee, D.W.,Lee, K.W.,Oh, B.H.,Seo, C.S.,Seo, M.S.,Yoo International Atomic Energy Agency 2007 Nuclear fusion Vol.47 No.5
<P>Construction of the Korea superconducting tokamak advanced research (KSTAR) tokamak is in its final phase. For the long-pulse KSTAR discharges, the ion cyclotron range of frequencies (ICRF) and neutral beam injection (NBI) heating systems are expected to play important roles through a selective heating of ions and electrons, control of the plasma pressure and current profiles, a core fuelling and beam diagnostics for the KSTAR. In addition, the ICRF system is expected to be used for possible discharge cleaning and assisting in the tokamak startup. In this paper, the recent progress in the development of the ICRF and the NBI heating systems is described. The four-strap ICRF antenna has been successfully tested for a voltage up to 41 kV for a pulse length of 300 s (to 46 kV for 20 s) in a test chamber. A prototype KSTAR NBI system has been developed. At present, the system has successfully produced a 1 MW beam power for 200 s and a 3.5 MW output beam power for 4 s.</P>
z-방향으로 비등방적인 원통형 결함을 가진 YBCO 단결정의 자속운동
심성엽,황태종,김동호 嶺南大學校 基礎科學 硏究所 1998 基礎科學硏究 Vol.18 No.-
We have made a comparison of the magnetic properties between columnar defect introduced YBCO single crystal(S#1) and partially introduced crystal(S#2).Magnetization vs. applied field curves of S#1 had larger width than S#2 by SQUID magnetometer measurement. But if we considered the volume of partially introduce columnar defect in S#2, the curves of magntization of S#1 and S#2 showed nearly same magnitude. Moreover, S#1 and S#2 showed same normalized relaxation rate thus we may concluded that only the part of columnar defect contrubute the flux pinning in S#2. Irreversibility line(IRL)was obtained from AC susceptibility measurement. IRL of S#2 showed downward shift relative to the case of S31. Below the Bcr, exponent αwas 1.85 and 1.68 in the S#2, respectively. Bose-glass phase was even showed in the case of S#2 defect structure.