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탐침형 정보 저장장치에 응용 가능한 강유전체 물질의 특성 연구
최진식,김진수,황인록,변익수,김수홍,전상호,이진호,홍사환,박배호,Choi J.S.,Kim J.S.,Hwang I.R.,Byun I.S.,Kim S.H.,Jeon S.H.,Lee J.H.,Hong S.H.,Park B.H. 한국진공학회 2006 Applied Science and Convergence Technology Vol.15 No.2
We have investigated structural and electrical properties of $PbZr_{0.3}Ti_{0.7}O_{3}$ (PZT) thin films deposited by pulsed laser deposition methods. PZT thin films have been deposited on $LaMnO_3$ (LMO) bottom electrodes with $LaAlO_3$ (LAO) substrates during different deposition times. High-resolution x-ray diffraction data have shown that all the PZT films and bottom electrodes are highly oriented. The thickness of each film is determined by field-emission scanning electron microscope. We have also observed root mean square roughness by using atomic force microscopy mode, and local polarization distribution and retention behavior of a ferroelectric domain by using piezoelectric force microscopy mode. A PZT/LMO structure has shown good ferroelectric and retention properties as the media for nano-storage devices. Pulsed laser deposition 방법으로 증착한 $PbZr_{0.3}Ti_{0.7}O_{3}$ (PZT)박막의 구조적, 전기적 성질에 대한 연구를 하였다. PZT 박막은 $LaAlO_3$ 기판위에 동일한 조건으로 증착된 $LaMnO_3$ (LMO) 산화물을 하부 전극으로 하여 증착시간을 변화시키며 증착하였다. High-resolution x-ray diffraction 결과를 통해 LMO 하부 전극과 PZT 박막이 방향성 있게 자란 것을 확인할 수 있었고 박막의 두께는 field-emission scanning electron microscope을 통하여 측정할 수 있었다. 또한 우리는 atomic force microscopy을 이용하여 박막의 표면 거칠기를 구하였고 국소적인 범위의 전기적 특성은 piezoelectric force microscopy 모드를 이용하여 측정하였다. 그 결과 PZT/LMO 구조는 나노 스토리지의 미디어로 쓰이기 위해 필요한 성질들을 갖추었음을 알 수 있었다.
이윤식,정성근,황인록,양용석,이명래,서동우,Yi, Y.,Jeong, S.K.,Hwang, I.,Yang, Y.S.,Lee, M.L.,Suh, D. 한국전자통신연구원 2022 전자통신동향분석 Vol.37 No.2
Cosmic radiation environments having extremely high-energy particles and photons cause severe malfunctions of electrical components in space and terrestrial regions. In this study, we revisit basic knowledge on radiation effects in ICT electrical devices, such as single event effect, total ionizing dose, and displacement damage. To avoid such soft errors and system failures, we introduce essential technical approaches from the perspectives of materials, layouts, circuits, and systems, including current research trends. By considering several techniques and Space EEE part standards, we suggest possible directions that can invoke New Space Era technology.
Thickness-dependent Resistance Switching in Cr-doped SrTiO3
김태광,두혜원,김민창,서순애,황인록,김연수,Jihoon Jeon,Sangik Lee,박배호 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.5
Thickness dependent bipolar resistance switching behavior was investigated on epitaxially grown Cr-doped SrTiO<SUB>3</SUB> (Cr-STO). All the pristine devices of different thickness show polarity independent symmetric current-voltage characteristic and the same space charge limited conduction mechanism. However, after a forming process the resultant conduction and switching phenomena are significantly disparate depending on the thickness of Cr-STO. The forming process itself is highly influenced by resistance values of each pristine device. Based on our results, we suggest that the resistance switching mechanism in Cr-STO is dependent not only on the insulating material composition or contact metal as previously reported but also on the initial resistance level determined by geometry and the quality of the insulating material. Bipolar resistance switching behavior in oxide material of different thickness exhibit mixed bulk and interface switching. This indicates that efforts in resistance based memory research should be focused on scalability or process method to control a given oxide material in addition to material type and device structure.
박진수,이명환,김다정,도달현,김명호,김진수,송태권,김상욱,최해인,장기완,황인록,박배호 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.7
0.935(Bi<SUB>0.5</SUB>Na<SUB>0.5</SUB>)TiO<SUB>3</SUB>-0.065BaTiO<SUB>3</SUB> (BNT-BT) thin films have been grown on Pt (111)/Ti/SiO2/Si substrates by using a pulsed laser deposition method. Deposition conditions were changed with oxygen pressure and deposition temperature. The BNT-BT thin film deposited at 750 ℃ - 300 mTorr exhibited a slim hysteresis loop with remnant polarization (2Pr) of 11 uC/cm2 and low leakage current density of 7.3 × 10<sup>-5</sup> A/cm<sup>2</sup> at 98 kV/cm. The piezoelectric responses of the thin films were investigated using piezoelectric force microscopy with a lock-in amplifier. The thin films exhibited piezoelectric properties of <i>d</i><sub>33,<i>f</i></sub> value of 168 pm/V.