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음성 감광막 몰드를 이용한 Ni과 Ni-W MEMS 구조물 제작
황완식,박준식,김윤호,박순섭,이인규,강성균 한국항공대학교 항공우주산업기술연구소 2002 航空宇宙産業技術硏究所 硏究誌 Vol.12 No.-
현재 급속한 성장을 보이고 있는 MEMS 분야에서 우선적으로 해결되야 할 문제 가운데 하나는 응용 분야에 알맞은 재료의 개발과 선택된 재료를 이용하여 고종횡비의 구조를 제작하는 것이다. 고종횡비를 구현하기 위하여 LIGA 공정과 SU-8 공정이 수행되고 있다. LIGA 공정은 높은 종횡비를 실현할 수 있지만 방사광 가속기를 사용해야 하는 문제가 있고, SU-8은 도금 후 제거가 어렵다는 단점이 있다. 따라서 그에 대한 대안으로 음성 감광막인 THB 공정을 적용하여 고종횡비를 갖는 MEMS 구조물 제작을 위한 몰드 제작이 시도 되었다. 제작된 몰드를 이용하여 전류 방법을 변화시켜 Ni 구조물이 제작되었다. 또한 Ni 보다 우수한 기계적 특성을 보이는 Ni-W 도금이 수행되어 MEMS 구조물로의 활용 가능성이 조사되었다. The rapid advancements of MEMS have fueled the search for high aspect ratio microstructures and new material developments to meet the requirements of production. High aspect ratio microstructures could be realized by applying LIGA(German Acronym for Lithografie, Galvanoformung, Abformung) and SU-8 processes. Among them, LIGA processes are the most promising one especially for the realization of high aspect ratio microstructures. However, many advanced technologies such as access of a synchrotron have delayed practical use in the field of MEMS. The difficulty of using SU-8 process is that SU-8 films could not be easily stripped. Utilizing THB negative photoresist as an alternative substitute of LIGA and SU-8 processes was tried to fabricate high aspect ratio microstructures. Fabrication and properties of electroformed Ni microstructures with varying applied current types as well as those of Ni-W microstructures were investigated.
공정변수와 후속 열처리가 저압화학증착 다결정 실리콘 박막의 특성에 미치는 영향
황완식,최승진,이인규 한국진공학회 2002 Applied Science and Convergence Technology Vol.11 No.4
LPCVD로 $560^{\circ}C$와 $650^{\circ}C$ 온도에서 실리콘 박막을 제작하였다. 온도에 따른 천이온도를 살펴보았으며, 비정질로 제작된 실리콘 박막을 $900^{\circ}C$와 $1100^{\circ}C$에서 열처리하였다. 제작된 박막에 대해서 XRD, SEM, ellipsometer, $Tektak^3$, Tencer FLX-2320등 그 외 장비를 사용하여, 박막의 결정 방향, 표면 거칠기, 활성화 에너지, 잔류 응력 등을 조사하였다. 본 실험을 통해 $560^{\circ}C$에서 비정질로 증착시키고 $900^{\circ}C$ -$1100^{\circ}C$ 열처리 통해 얻은 다결정실리콘 박막은 처음부터 다결정으로 제작한 박막에 비해 낮은 잔류 응력과 표면 거칠기를 보였다. LPCVD silicon films were deposited at temperatures between $560^{\circ}C$ and $650^{\circ}C$ Structure, surface roughness, films thickness and residual stress were measured by using XRD, SEM, ellipsometer, $Tektak^3$, Tencor FLX-2320 and other techniques. Polysilicon films of low stress, small surface roughness were obtained when the films are deposited at $560^{\circ}C$ in the amorphous phase and subsequently annealed to make polycrystalline silicon layers at $900^{\circ}C$ -$1100^{\circ}C$. The silicon films deposited in amorphous phase and crystallized by post thermal treatment showed better mechanical properties.
LIGA-like 공정을 이용한 마이크로 부품 복제용 Ni과 Ni-W 금형 제조 및 특성
황완식,박준식,강영철,조진우,박순섭,이인규,강성군,Hwang, W.S.,Park, J.S.,Kang, Y.C.,Cho, J.W.,Park, S.S.,Lee, I.G.,Kang, S.G. 한국재료학회 2003 한국재료학회지 Vol.13 No.1
Electroplated Ni and Ni-W micro-molds using LIGA-like process for replication of micro-components such as microfluidic parts and micro optical parts have been investigated. In general, it is hard to produce micro-parts using conventional mechanical processes. Micro-mold formed by LIGA-like process could fabricate micro-parts with high aspect ratio. In this paper, fabrication and properties of electroplated Ni molds with varying applied current types as well as those of Ni-W molds were investigated. Ni molds fabricated under pulse-reverse current showed the highest hardness value of about 160 Hv. Ni-W molds showed the hardness of about 500 Hv which was much harder than that of Ni electroplated molds. The above results suggested that high quality micro-molds could be fabricated by using Ni electroplating of pulse-reverse type for core molds and sequential Ni-W alloys coating.
수열합성 공정으로 합성된 산화갈륨의 상변화에 따른 광촉매 특성
류희중,김선재,이인규,오훈정,황완식,Ryou, Heejoong,Kim, Sunjae,Lee, In Gyu,Oh, Hoon-Jung,Hwang, Wan Sik 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.2
GaOOH is obtained via hydrothermal synthesis procedure. The formed GaOOH is turned into α-Ga<sub>2</sub>O<sub>3</sub> at 500℃ annealing. As the annealing temperatures increase the α-Ga<sub>2</sub>O<sub>3</sub> is in part turned into β-Ga<sub>2</sub>O<sub>3</sub> and fully turned into β-Ga<sub>2</sub>O<sub>3</sub> after 1100℃. XPS and PL results reveal that heterojunction interface between α-Ga<sub>2</sub>O<sub>3</sub> and β-Ga<sub>2</sub>O<sub>3</sub> become maxim at 500℃ annealing condition, which result in the highest photocatalytic activity. The presence of heterojunction interface slows down the recombination process by separating photogenerated electron-hole pairs and thereby enhance the overall photocatalytic activity.
산화 그래핀을 이용한 구리이온 흡착과 투과도 특성을 이용한 구리이온 농도 실시간 측정
김승두,류희중,오훈정,황완식,Kim, Seungdu,Ryou, Heejoong,Oh, Hoon-Jung,Hwang, Wan Sik 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.2
Various Cu ions are discharged into water from various industries, which results in a severe trouble for groundwater, soil, air, and eventually animals and humans. In this work, graphene oxide (GO) is introduced as a Cu removal absorber and the real-time monitoring method is demonstrated. The results show that GO is a very effective material to absorb Cu ions in the solution. In addition, the residual Cu ions in the solution is monitored via optical transmittance method, which well match with Inductively Coupled Plasma Mass Spectrometer (ICP-MS) analysis.