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광변조기 응용을 위한 InP Buried Channel CCD의 구현
한교용 嶺南大學校 工業技術硏究所 1993 工業技術硏究所論文集 Vol.21 No.2
반절연 InP 기판에 gas-source MBE방법으로 성장시킨 n-type 에피층위에 8-bit, 4-phase buried-channel InP CCD를 제작하고 그 특성을 측정하였다. 채널의 분리는 메사 에칭으로 수행되었고 2층의 오버렙핑 게이트구조는 Indirect Plasma enhanced CVD법을 이용하여 성장된 SiO₂를 사용하여 절연시켰다. 제작된 CCD는 1∼3MHz의 작동 주파수에서 안정된 CCD동작을 나타냈고, 이때 전하전송효율(Charge Transfer Efficiency)는 <0.992로 측정되었다. 상대적으로 낮은 CTE는 표면 채널 CCD동작의 결과로서 설명되어 질수도 있다. 8bit, 4phase buried-channel InP CCDs on Semi-insulating substates with n-type epitaxial layer grown by gas-source MBF have been fabricated and characterized. Channel isolation was achieved using a mesa etch and the two level overlapping gate structure was insulated using indirect plasma enhanced CVD grown SiO₂ Results indicate stable operation with charge transfer efficiences at 1 to 3MHz operating frequencies<0.992. Relatively low CTE may be explained by surface channel operation.
ITO 에미터 투명전극을 갖는 InGaAs/InP HPT의 연구
한교용,Han, Kyo-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.3
A fully integrable InP/InGaAs HPT with an ITO emitter contact was first fabricated by employing a $SiO_2$ passivation layer. The electrical and the optical characteristics of the HPT with a passivation layer were measured and compared with those of the HPT without a passivation layer. The only noticeable difference was the increased emitter series resistance of the HPT with a passivation layer. AES analysis was performed to explain the reason of the increased emitter series resistance. Results show that PECVD $SiO_2$ deposition and annealing processes cause the diffusion of oxygen to the interface and the depletion of tin at the interface, which may be responsible for the increase of the series resistance.
p-type InP 표면에 미치는 H₂S 플라즈마 Passivation 효과
이영철,최병건,한교용 嶺南大學校 工業技術硏究所 1997 工業技術硏究所論文集 Vol.25 No.2
The effects of H₂S plasma passivation on p-type InP surface have been characterized by performing PL measurements. PL samples were fabricated under different RF power and different exposure time. After exposing them to H₂S plasma, their surface was covered by RF sputtered ITO film. Our PL results showed that RF power and exposure time should be optimized to obtain better surface passivation. In order to investigate surface type conversion by H₂S plasma, ITO/InP solar cell was fabricated and electrically characterized. The solar cell showed the typical I-V characteristic curve of a pn diode, which demonstrated the formation of pn junction by H₂S plasma.
Indium Tin Oxide(ITO) gate electrode deposition and low temperature annealing
Han, KyoYong 嶺南大學校 工業技術硏究所 1993 工業技術硏究所論文集 Vol.21 No.1
88/12의 비율을 갖는 In/Sn 의 합금 pellets들을 각기 다른 산소압력에서 필라멘트 가열방식을 사용하여 ITO film들을 진공증착 하였다. 증착속도는 1Å/sec이고 thermal annealing은 200℃에서 공기 또는 질소 환경에서 30분간 수행하였다. 산소압력 ?? torr에서 진공증착된 ITO film들이 대기중에서 thermal annealing이 수행되었을 때 상대적으로 낮은 1.69×10³ohm/squre의 sheet 저항과 95%의 높은 광투과성을 보여준다. 질소환경에서 subsequent annealing을 수행한 결과는 sheet 저항은 0.52×10³ ohm/squre로 낮아졌고 광투과성은 75%로 낮아졌다. ITO films were reactively deposited by thermal evaporation of In/Sn alloy pellets, 88/12 ratio, at various oxygen partial pressures. Deposition was performed with a deposition rate of 1Å/sec. Thermal annealing was subsequently done at 200℃ in air or in N₂for 30 min. Films deposited at oxygen partial pressure of ?? torr showed both a relatively low sheet resistance of 1.69×10³ ohm/square and high optical transmission of 95%, when they were annealed in air. After subsequent annealing in N₂environment, the resulting sheet resistance was reduced to 0.52×10³ ohm/square and the resulting optical transmission was reduced to 75%.
Ammonium Sulfide Passivation를 이용한 Indium Tin Oxide / Indium Phosphide 위성용 태양전지
배성호,한교용,김현태,이영철 嶺南大學校 工業技術硏究所 1996 工業技術硏究所論文集 Vol.24 No.1
To improve efficiency, ITO/InP solar cells were firstly fabricated and characterized by employing ammonium sulfide passivation technique. Indium Tin Oxide was rf sputtered on the Zn doped (100) p-InP substrate. Our results showed that the short-circuit current was greatly increased and the open circuit voltage was also enhanced. Therefore, the expected performance improvement could be achieved.
III-V 광소자 제작을 위한 ITO/n<sup>+</sup>lnP 옴 접촉 특성연구
황용한,한교용 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.5
The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.
ITO/InP 태양전지 제작에 응용된 sulfur passivation의 효과
이영철,한교용 대한전자공학회 1997 電子工學會論文誌, D Vol.d34 No.9
In order to improve the electrical performance of ITO/InP solar cells, sulfur passivation technique was employed using (N $H_{4}$)$_{2}$ $S_{x}$ solution. Passivation effects were analyzed by measuring the short circuit current density ( $J_{sc}$ ) of solar cells and photoluminescence (PL) of ITO/InP interfaces. This paper firstly reports the sulfur passivation effects by investigating the correlation between the PL intensity and the short circuit current. Generally, PL intensity and the short circuit current of sulfur passivated sampels wer eincreased, and showed the same trend. Especially, samples prepared at 60.deg. C (N $H_{4}$)$_{2}$ $S_{x}$ solution exhibited the highest $J_{sc}$ and PL intensity. These results demonstrated that the short circuit currents was influenced by the ITO/InP interface states.
P3HT/POSS 합성 활성층을 이용한 OTFT 소자의 대기안정성 향상
박정환,한교용,Park, Jeong-Hwan,Han, Kyo-Yong 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.2
In order to improve air stability, we proposed a new active layer of an organic TFT by synthesizing P3HT/POSS conjugated polymer. P3HT/POSS OTFTs with the various P3HT/POSS volume ratios were fabricated and characterized. With the P3HT/POSS volume ratio of 1:1, we achieved the field-effect mobilities of ${\sim}1.19{\times}10^{-3}\;cm^2/v{\cdot}sec$ in the saturation region and the current on/off ratio of ${\sim}2.51{\times}10^2$. The resulting current on-off ratio was much higher than that of the P3HT-based OTFTs and resulted from the dramatic decrease of the off-current. Since the off-current can be reduced by preventing oxygen in atmosphere from doping the P3HT/POSS active layers, this new active layer shows its ability to avoid oxygen doping in atmosphere. Therefore, the improvement of the air stability can be achieved by employing the P3HT/POSS active layers.
InP/InGaAs HPT's 제작을 위한 ITO/n^+-InP 옴 접촉 특성연구
황용한,한교용 영남대학교 공업기술연구소 2001 工業技術硏究所論文集 Vol.29 No.1
The use of a thin film of indium between the ITO and the n+-InP contact layers for InP/InGaAs HPTs was studied without degrading ifs excellent optical transmittance properties. ITO/n+-InP ohmic contact was successfully achieved and the specific contact resistance of about 6.6×10-4Ω㎠ was measured by use of the transmission line method (TLM), The DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with that of InP/InGaAs HBTs with the opaque emitter contacts.