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Electrical Properties of MOS Capacitors Irradiated with Co60 - γ Ray
권순석(Soon-Seok Kwon),박흥우(Heung-Woo Park),임기조(Kee-Joe Lim),류부형(Boo-Hyung Ryu),강성화(Seong-Hwa Kang) 한국진공학회(ASCT) 1995 Applied Science and Convergence Technology Vol.4 No.4
MOS(금속-산화막-반도체 접합) 소자가 방사선에 노출되면, 산화막내에 양의 공간전하가 생성되고 Si-SiO₂ 계면에 계면준위가 생성된다. MOS 커패시터의 방사선 조사효과를 방사선 피폭량과 산화막의 두께를 달리하는 시편에서 정전용량과 전류변화를 측정하여 고찰하였다. 정전용량-바이어스 전압 특성 실험 결과로부터 플렛밴드 전압 및 계면상태밀도를 계산하였다. 또한 전압-전류 특성은 방사선 조사로 산화막내에 생성된 양의 공간전하와 Si-SiO₂ 계면에 포획된 전하에 의해서 설명이 가능하였다. When MOS(Metal-Oxide-Semiconductor) device is exposed to radiation, the resultant effects can create the positive space charge in the oxide and the interface state in the silicon-silicon dioxide interface. Irradiation effects on MOS capacitors were investigated by the measurements of capacitance and current at various radiation dose and oxide thickness. From the experimental results on capacitance-bias voltage characteristics, the flatband voltage and the interface state density was calculated. The I-V characteristics could be explained by positive space charges created by radiation in the oxide, and charges trapped at silicon-silicon dioxide interface.
권순석,임기조 ( Soon Seok Kwon,Kee Joe Lim ) 충북대학교 산업과학기술연구소 1996 산업과학기술연구 논문집 Vol.10 No.1
Abstract_Roman Electroluminescence is a phenomenon of the light emission caused by the applied electrical field to phosphor. In a view point of device fabrication technology, two types of ELDs have been reported, that is, powder dispersion type ELD(P-ELD
MOS 구조에서의 Co60-γ ray 방사선 조사 효과
권순석,임기조,정수현 충북대학교 건설기술연구소 1992 建設技術論文集 Vol.11 No.2
When a MOS device is exposed to ionizing radiation, the resulting effects from this radiation can cause modulation and/or degradation in devices characteristics and its operating life. In this study, for investigation of radiation effects on P-type MOS capacitor, We performed to irradiate on the MOS capacitor with a cobalt-60 gamma ray source and measured the capacitance-voltage(C-V) method with oxide thickness and total dose. We obtained the following results ; 1. The flatband voltage(V_(fd)) and the threshold voltage(V_(th)) are shifted toward negative bias voltage with increasing irradiation dose in p-type MOS capacitors. 2. C-V curves shows strething-out due to the non-uniformity of interface trap distribution. These results can be explained by using space charge in oxide layer and new produced interface state at silicon-silicon dioxide(Si-SiO₂) interface