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ALD법으로 성장한 HfO<sub>2</sub> 박막의 열처리에 따른 특성변화
이재웅,함문호,맹완주,김형준,명재민,Lee, J.W.,Ham, M.H.,Maeng, W.J.,Kim, H.,Myoung, J.M. 한국재료학회 2007 한국재료학회지 Vol.17 No.2
The effects of post-annealing of high-k $HfO_2$ thin films grown by atomic layer deposition method were investigated by the annealing treatments of $400-600^{\circ}C$. $Pt/HfO_2/p-Si\;MOS$ capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the $500^{\circ}C-annealed\;HfO_2$ film remained to be amorphous, and the $600^{\circ}C-annealed\;HfO_2$ film was crystallized. The annealing treatment at $500^{\circ}C$ resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the $HfO_2$ films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.
장성철(S. C. Jang),서경호(G. H. Seo),박태수(T. S. Park),이재웅(J. W. Lee),최경관(G K. Choi),이용우(Y. W. Lee) 한국생산제조학회 2010 한국공작기계학회 추계학술대회논문집 Vol.2010 No.-
In this study, the development of collector system for high efficiency exhausted. The aim of this study is to remove crack on a ventilation device at the suction part of plants factory, and the main point is making optimum configuration by improving an existing collector system Finally, the improved high efficiency exhausted was designed.