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CVD에 의한 고전력 디바이스용 단결정 3C-SiC 박막 성장
정귀상,심재철,Chung, Gwiy-Sang,Shim, Jae-Cheol 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.2
This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.
AlN 버퍼층위에 증착된 다결정 3C-SiC 박막의 라만 산란 특성
정귀상,김강산,Chung, Gwiy-Sang,Kim, Kang-San 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.6
This Paper describes the Raman scattering characteristics of polycrystalline (Poly) 3C-SiC thin films, in which they were deposited on AlN buffer layer by APCVD using hexamethyldisilane (MHDS) and carrier gases (Ar+$H_2$). When the Raman spectra of SiC films deposited on the AlN layer of before and after annealing were worked according to growth temperature, D and G bands of graphite were measured. It can be explained that poly 3C-SiC films admixe with nanoparticle graphite and its C/Si rate is higher than ($C/Si\;{\approx}\;3$) that of the conventional SiC, which has no D and G bands related to graphite. From the Raman shifts of 3C-SiC films deposited at $1180^{\circ}C$ on the AlN layer of after annealing, the biaxial stress of poly 3C-SiC films was obtained as 896 MPa.
정귀상,이태원,Chung, Gwiy-Sang,Lee, Tae-Won 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.4
This paper describes the temperature characteristics of polycrystalline 3C-SiC micro resonators. The $1.2{\mu}m$ and $0.4{\mu}m$ thick polycrystalline 3C-SiC cantilever and doubly clamped beam resonators with $60{\sim}100{\mu}m$ lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at temperature range of $25{\sim}200^{\circ}C$. The TCF(Temperature Coefficient of Frequency) of 60, 80 and 100 On long cantilever resonators were -9.79, -7.72 and -8.0 ppm/$^{\circ}C$. On the other hand, TCF of 60, 80 and $100{\mu}m$ long doubly clamped beam resonators were -15.74, -12.55 and -8.35 ppm/$^{\circ}C$. Therefore, polycrystalline 3C-SiC resonators are suitable with RF MEMS devices and bio/chemical sensor applications in harsh environments.
극한 환경 MEMS용 옴익 접촉을 위한 다결정 3C-SiC 박막의 표면 처리 효과
정귀상,온창민,Chung, Gwiy-Sang,Ohn, Chang-Min 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.3
This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.
진동 구동식 원통형 전자기 에너지 하베스터의 설계 및 해석
정귀상,류경일,Chung, Gwiy-Sang,Ryu, Kyeong-Il 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.11
This paper describes the design and analysis of vibration driven cylindric electromagnetic energy harvester. The proposed harvester consists with spring, coil and rear earth magnet. The design utilizes an electromagnetic transducer and its operating principle is based on the relative movement of a magnet pole with respect to a coil. In order to optimal design and analysis, ANSYS FEA (Finite Elements Analysis) and Matlab model were used to predict the magnetic filed density with vibration and the generated maximum output power with load resistance. The system was designed for 6 Hz of natural frequency and spring constant was 39.48 N/m between 2 mm and 6 mm of displacement in moving magnet. When moving magnet of system was oscillated, each model was obtained that induced voltage in the coil was generated 2.275 Vpp, 2.334 Vpp and 2.384 Vpp, respectively. Then maximum output powers of system at load resistance ($1303{\Omega}$) were generated $124.2{\sim}132.2\;{\mu}W$ during magnets input displacement of 3 mm and 6 Hz periodic oscillation.
양단이 고정된 빔형 다결정 3C-SiC 마이크로 공진기의 제작과 그 특성
정귀상,이태원,Chung, Gwiy-Sang,Lee, Tae-Won 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.4
This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with $60{\sim}100{\mu}m$ lengths, $10{\mu}m$ width, and $0.4{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the $60{\sim}100{\mu}m$ long cantilevers, the fundamental frequency appeared at $373.4{\sim}908.1\;kHz$. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.
LPCVD로 성장된 다결정 3C-SiC 박막의 물리적 특성
정귀상,김강산,Chung Gwiy-Sang,Kim Kang-San 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.8
This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.
정귀상,석전성,중촌철랑,Chung, Gwiy-Sang,Ishida, Makoto,Nakamura, Tetsuro The Korean Sensors Society 1994 센서학회지 Vol.3 No.1
This paper describes the characteristics of a piezoresistive pressure sensor fabricated on a SOI (Si-on-insulator) structure, in which the SOI structures of Si/$SiO_{2}$/Si and Si/$Al_{2}O_{3}$/Si were formed by SDB (Si-wafer direct bonding) technology and hetero-epitaxial growth, respectively. The SOI pressure sensors using the insulator of a SOI structure as the dielectrical isolation layer of piezoresistors, were operated at higher temperatures up to $300^{\circ}C$. In the case of pressure sensors using the insulator of a SOI structure as an etch-stop layer during the formation of thin Si diaphragms, the pressure sensitivity variation of the SOI pressure sensors was controlled to within a standard deviation of ${\pm}2.3%$ over 200 devices. Moreover, the pressure sensors fabricated on the double SOI ($Si/Al_{2}O_{3}/Si/SiO_{2}/Si$) structures formed by combining SDB technology with epitaxial growth also showed very excellent characteristics with high-temperature operation and high-resolution.