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정순원,김채규,김진규,김용성,이남열,김광호 청주대학교 산업과학연구소 1999 産業科學硏究 Vol.17 No.1
Metal-ferroelectric-semiconductor(MFS) devices by using rapid thermal annealed LiNbO₃/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS devices. MFSFETs with various gate electrodes, that are aluminum, platinum and poly-Si, using LiNbO₃/Si(100) structures were fabricated and the properties of the FETs have been discussed. The ferroelectric capacitors showed practically no polarization degradation up to about 10^(10) switching cycles when subjected to symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) in the 500kHz. The I_(D)-V_(G) characteristics of MFSFETs showed a hysteresis loop due to the ferroelectric nature of the LiNbO_(3) thin film. The drain current of the "on" state was more than 3 orders of magnitude larger than the "off" state current at the same "read" gate voltage of 1.5 V, which means the memory operation of the MFSFET. A write voltage as low as ±4 V, which is applicable to low power integrated circuits, was used for polarization reversal. The retention properties of the FET using A1 electrode were quite good up to about 10³ s and using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.
김진규,정순원,김용성,이남열,정상현,김광호 청주대학교 산업과학연구소 2000 産業科學硏究 Vol.18 No.1
The growth of YMnO_(3) films directly on Si(100) substrates by RF magnetron sputtering system has been performed with different RF powers of 50W, 100W, 200W at a temperature range of 840℃∼870℃ in oxygen ambient. The structural properties of YMnO_(3) films on Si(100) by rapid thermal annealing(RTA) analysed by XRD(X-ray diffraction). The c-axis oriented peaks of YMnO_(3) were observed deposited in YMnO_(3)/Si(100) structure of RF power at 870℃ in oxygen ambient, and the peaks were enlarged by increasing. The RF powers The dielectric constant of the film deposited at 100W and 120W of RF power were about 19, 20 respectively.