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Age-Related Modification of Maxillofacial and Oral Regions: A Review
한성수(S.S. Han),고재승(J.S. Ko),김동환(Y.J. Choi),김선화(D.H. Kim),유기수(S.H. Kim),유영현(K.S. Yoo),윤식(Y.H. Yoo),최연주(S. Yoon),R.F. Wang(R.F. Wang),M.G. Mitzel(M.G. Mitzel),R. Courtney(R. Courtney) 대한체질인류학회 1996 대한체질인류학회지 Vol.9 No.1
간추림 이 종설은 20세기 후반기가 빚어낸 노인 인구의 인구 역학적 증가가 노화 연구, 특히 인간 노화 과정의 연구를 촉구하고 있는 이유를 정리하였다. 인간 노화는 인간 개성의 차이 때문에 그 연구의 모델을 찾는 것이 중요하다. 통계에 쓰기 종은 형적 연구와 종적 연구의 장단점을 비교하였다. 악안면구강영역을 중심으로한 인간 노화의 부위적 노화를 다룬 이유는 위에서 말한 해부학적 부위가 모든 인체 조직세포와 뇌신경이 집중된 부위로서 그 다양성과 복잡성이 인체 노화를 연구 하는데 좋은 부위이기 때문이다. 다만 그 중에서도 치아 자체의 노화 과정을 좀 더 다룰 재료를 모우 이용하지 옷 항을 안타깝게 생각한다.
홍광준,이상열,유상하,서상석,문종대,신영진,정태수,신현길,김택성,송정훈,유기수 ( K . J . Hong,S . Y . Lee,S . H . You,S . S . Suh,J . D . Moon,Y . J . Shin,T . S . Jeoung,H . K . Shin,T . S . Kim,J . H . Song,K . S . Rheu ) 한국센서학회 1993 센서학회지 Vol.2 No.1
Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in N₂ gas at 5500 it was found hexagonal structure whose lattice constants a_o and c_o were 4.1364 Å and 6.7129 Å, respectively. Its grain size was about 0.35 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150K and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (γ), maximum allowable power dissipation and response time on these samples.
Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성
신영진 ( Y . J . Shin ),홍광준 ( K . J . Hong ),이상열 ( S . Y . Lee ),유상하 ( S . H . You ),서상석 ( S . S . Suh ),문종대 ( J . D . Moon ),신현길 ( H . K . Shin ),김택성 ( T . S . Kim ),송정훈 ( J . H . Song ),유기수 ( K . S . R 한국센서학회 1993 센서학회지 Vol.2 No.1
Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in N₂ gas at 450℃ it was found hexagonal structure whose lattice parameters a_o and c_o were 4.302 A and 7.014 A, respectively. Its grain size was about 0.3 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (γ), maximum allowable power dissipation and response time on these samples.
정태수,유평열,신영진,신현길,김택성,정철훈,이훈,신영신,홍관준,유기수 ( T . S . Jeong,P . Y . Yu,Y . J . Shin,H . K . Shin,T . S . Kim,C . H . Jeong,H . Lee,Y . S . Shin,K . J . Hong,K . S . Rheu ) 한국센서학회 1993 센서학회지 Vol.2 No.1
A CdS single crystal was grown by using sublimation method. Lattice constants, a_o and c_o, obtained by using extrapolation were 4.1318 Å and 6.7122 Å, respectively. The carrier density was ∼10^(23) m^(-3) and the mobility was 2.93X10^(-2) ㎡/V-sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to T^½ from 33 K to 150 K and a decreasing tendency in proportion to T^(-2) from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.
정태수,유평열,신영진,신현길,김택성,정철훈,이훈,신영신,홍광준,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-
승화방법으로 광전도체의 CdS 단결정을 성장하였고 외삽법으로 구한 a_o와 c_o 의 격자상수 값은 각각 4.1318Å과 6.7122Å임을 알았다. Hall 측정값으로 부터 상온에서의 CdS 단결정의 운반자 농도와 이동도는 각각∼10^23m^-3과 2.93×10 exp (-2)㎡/V sec 이였으며 온도에 따른 이동도 변화는 33 K에서 150 K까지는 T^1/2 에 따라 증가하는 경향이 있고 180 K 에서 상온까지는 T^-2에 따라 감소한 경향이 나타났다. 광전류 측정으로 부터 나타난 단파장대의 봉우리는 진성전이에 기인하는 봉우리였으며 이 봉우리의 에너지값은 CdS 광전도체에 에너지 밴드 갭과 동일한 값을 나타냄을 알았다. A CdS single crystal was grown by using sublimation method. Lattice constants, a_o and c_o , obtained by using extrapolation were 4.1318 Å and 6.7122 Å, respectively. The carrier density was∼10^23m^-3 and the mobility was 2.93×10 exp (-2)㎡/V-sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to T^1/2 from 33 K to 150 K and a decreasing tendency in proportion to T^-2 from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.
황광준,이상열,유상하,서상석,문종대,신영진,정태수,신현길,김택성,송정훈,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-
Chemical bath deposition 방법으로 다결정 CdS 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. 550℃로 열처리한 시료의 경우 X-선 회절무늬로 부터 외삽법에 의해 a_。와 c_。는 각각 4.1364 Å과 6.7129 Å인 육방정계임을 알았다. 이 때 낱알크기는 약 0.35㎛이었다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도의존성을 연구하였다. 이동도는 33 K 에서 150 K 까지는 압전산란에 의하여, 150 K 에서 293 K 까지는 극성광학산란에 의하여 감소하는 경향이 나타냈다. 광전도 셀의 특성으로 스텍트럼 응답, 감도(γ), 최대허용소비전력 및 응답 시간을 측정하였다. Polycrystalline CdS thin films were grown on creamic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in N_2 gas at 550℃ it was found hexagonal structure whose lattice constants a_o and c_o were 4.1364 Å and 6.7120Å, respectively. Its grain size was about 0.35 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150K and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (γ), maximum allowable power dissipation and response time on these samples.
Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성
홍광준,이상열,유상하,서상석,문종대,신영진,정태수,신현길,김택성,송정훈,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-
Chemical bath deposition 방법으로 다결정 CdSe 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. 450℃로 열처리한 시료가 X-선 회절무늬로 부터 외삽법에 의해 a_o와 c_o 는 각각 4.302 Å과 7.014 Å인 육방정계임을 알았다. 이 때 낱알크기는 약 0.3㎛이었다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도의존성을 연구하였다. 이동도는 33 K 에서 200 K 까지는 압전산란에 의하여, 200 k 에서 293 K 까지는 극성광학산란에 의하여 감소하는 경향이 나타냈다. 광전도 셀의 특성으로 스텍트럼 응답, 감도(γ), 최대허용소비전력 및 응답 시간을 측정하였다. Polycrystalline CdSe thin films were grown on creamic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in N_2 gas at 450℃ it was found hexagonal structure whose lattice parameters a_o and c_o were 4.302 Å and 7.014 Å, respectively. It grain size was about 0.3 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical potical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivily (γ), maximum allowable power dissipation and response time on these samples.