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신영진,신현길,김택성,유기수,정태수,유평열,정철훈,이훈,신영신,홍관준 한국센서학회 1993 센서학회지 Vol.2 No.1
A CdS single crystal was grown by using sublimation method. Lattice constants, a_o and c_o, obtained by using extrapolation were 4.1318 Å and 6.7122 Å, respectively. The carrier density was ∼10^(23) m^(-3) and the mobility was 2.93X10^(-2) ㎡/V-sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to T^½ from 33 K to 150 K and a decreasing tendency in proportion to T^(-2) from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.