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Strain Distributions of Self-Assembled CdxZn1-xTe Quantum Wires Grown on ZnTe Buffer Layers
J. H. You,김태환,이대욱,H. L. Park,이홍석,J. H. Jung,우준택,유건호 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.4
The shape of CdxZn1-xTe/ZnTe quantum wires (QWRs) was approximately modeled to be a half-ellipsoidal cylinder on the basis of an atomic force microscopy image. The normal strain components of the CdxZn1-xTe/ZnTe QWRs were numerically calculated by using a finite-difference method (FDM) taking into account shape-based strain effects. The strain potential energies of the conduction band and the heavy-hole band for the CdxZn1-xTe/ZnTeQWRs were calculated by using a FDM taking into account the three kinds of normal strain components.
Electronic Properties of Self-Assembled CdTe Quantum Wires Grown on ZnTe Buffer Layers
S.H. Song,김태환,박홍이,이홍석,이인환,J.H. Kim,우준택 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3
The photoluminescence (PL) spectra at several temperatures of self-assembled CdTe/ZnTe quantum wires (QWRs) grown by using molecular-beam epitaxy and atomic layer epitaxy showed that the PL peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E$_1$-HH$_1$) shifted to lower energy with increasing temperature. The electronic subband energies were calculated by using a variable-sized meshing finite difference method (FDM). The experimental (E$_1$-HH$_1$) transitions calculated by using the FDM taking into account strain effects are in reasonable agreement with the calculated (E$_1$-HH$_1$) transitions. The present results could help improve understanding of the electronic properties of the CdTe/ZnTe QWRs.