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Ion-Implanted E-IGFET의 Doping Profile과 Threshold 전압과의 관계에 관한 연구(I)
손상희,오응기,곽계달,Son, Sang-Hui,O, Eung-Gi,Gwak, Gye-Dal 대한전자공학회 1984 전자공학회지 Vol.21 No.4
이온주입형 E-IGFET에서 이온주입층내 불순물 profile을 임의의 형태로 가정하였으며, 가정한 불순물 profile을 이용하여 threshold 전압에 대한 간단한 model을 유도하였다. 유도한 model을 이용하여 Gaus-sian-profile일 때의 threshold 전압치를 구하였고, 실제의 측정 data와 비교하였을 때 일치함을 확인할 수 있었다. 더불어, box-profile일 때의 threshold 전압치의 오차를 계산해 보았다. 또한, substrate-bias에 의한 threshold 전압의 변화를 simulation하였으며. 계산과정에서 이온주입층의 깊이 D를 구하는 새로운 방법을 제시하였다. A simple model for the impurity profile in an ion-implanted channel layer of an enhancement type IGFET is assumed and a simple expression for the threshold voltage derived by using the assumed impurity profile is analyzed in detail. Also, this simple model is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel devices. The error range of threshold voltage between gaussian-profile and box-profile is calculated in this paper and a new method of calculating the depth of ion-implanted Baler D is also introduced.
박성호,최인훈,오응기,최성우,박문평,윤형섭,이해권,박철순,박형무 대한전자공학회 1994 전자공학회논문지-A Vol.31 No.9
We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.