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부모양육행동, 정서문제 및 삶의 목표가 청소년의 학습습관에 미치는 영향
배장섭 ( Bae,Jang Sub ) 국제뇌교육종합대학원 뇌교육연구소 2017 뇌교육연구 Vol.19 No.-
The purpose of this study was to analyze the effect of parenting behavior, emotion ontrol, future goal on study habits of adolescents. In the p resent study, I used 3rd year results of Korea Child Youth Pannel Survey (KCYPS) conducted by Korea Youth Politic institute. Main findings of this study were as follows; The effect of affection behavior among variables of parenting behavior was significantly positive on good study habits. And the effect of attention concentration among sub variables of emotion control significantly positive as well. It was also analyzed that the effect of higher future goal were significantly positive on good study habits. As the author objectively proved that how affection behavior can have an influence on good study habits, I hope this will be the basic data that parents discipline adolescents by using affection and attention rather than lecture or abuse.
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강영석,배장섭,김재향,김기래 신라대학교 자연과학연구소 2000 自然科學論文集 Vol.8 No.-
Many computers in the office and the laboratory of a school are generally interconnected through the Local Area Network (LAN). Users of computer interfaced with the LAN use the same printer with time sharing. Alternatively, they use the multi-user printer interface to print in the office which can't have LAN system due to the great expenses. Otherwise they have to connect directly moving the printer to computer. In this papaer, we present a new printer interface equipment which can interface a printer and multi computers through wireless using the radio frequency of about 430MHz. The tranceivers of the equipment consist of two part: one part is installed in parallel port of computer and other part is installed in Centronix port of printer. Their maximum data rate is 9600bps and the communication area is about 50 meters in best case. The merits of this equipment are low in cost and small in size.
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DC Magnetron Sputtering 방법으로 Al2O3 기판위에 증착한 Ti 후막의 물리적 특성
이선영,김일원,강선희,김영선,김창도,김현창,배장섭,이재신,이재원,지영훈 한국물리학회 2005 새물리 Vol.51 No.2
We have fabricated thick Ti metal films on Al$_{2}$O$_{3}$ sub-strates by using dc magnetron sputtering and investigated the mechanical and thw electric proper-ties as functions of the dc power (1.5, 2.0 and 2.5 kW), the argon-gas partial pressure (5, 7 and 9 mTorr) and the annealing temperature (300, 400, 450 and 500 $^\circ$C) at high vacuum pressure (10$^{-5}$ Torr). The SEM image, confirmed the existence of an interface layer between the thick Ti film and the Al$_{2}$O$_{3}$ substrate, and an energy dispersive spectroscopic line analysis showed that the interface layer was a mixture of Ti and Al compounds. The interface layer was composed of TiO, Ti$_{3}$Al and TiAl$_{3}$, which were due to reactions in the interface due to diffusion of Al and O from the Al$_{2}$O$_{3}$substrate. This phenomenon can be explained by an enhancement in the diffusion velocities of Al and O due to the gain in the thermal energy of the substrate caused by increases in the with increasing dc power,the Ar partial pressure and the thermal annealing temperature when the thick Ti films were sputtered on the Al$_{2}$O$_{3}$ substrates. The adhesion strength was enhanced by alleviating the lattice mismatch between the hexagonal phase of the thick Ti film and the tetragonal phase of the Al$_{2}$O$_{3}$ substrate by forming an interface layer between TiAl$_{3}$ with a tetragonal phase and Ti$_{2}$Al with a hexagonal phase. The thickness of the interface layer increased with increasing dc power and Ar partial pressure. In particular, the adhesion strength increased with increasing thickness of the Ti$_{3}$Al compound in the interface layer. The electric resistivity of the Ti films was not affected by variations in the dc power, the Ar partial pressure, or the thermal annealing temperature. dc 마그네트론 스퍼터링 방법으로 Al$_{2}$O$_{3}$ 기판 위에 Ti 후막을 증착하여 dc 출력(1.5, 2.0, 2.5 kW), 아르곤 분압비 (5, 7, 9 mTorr), 진공 열처리 (300, 400, 450, 500$^o$C) 조건에 따른 후막의 역학적, 전기적 특성을 조사하였다. SEM 측정으로부터 Al$_{2}$O$_{3}$ 기판과 Ti 후막 사이에 중간층이 존재함을 확인하였으며, 에너지 분산 분광 (Energy Dispersive Spectroscopy, EDS)을 이용한 성분 분석을 실시하여 중간층의 성분이 Ti, Al 그리고 O 원소로 이루어져 있음을 확인하였다. XRD 분석 결과 중간층의 원소들은 TiO, Ti$_{3}$Al, TiAl$_{3}$와 같은 화합물을 형성하고 있으며, 이와 같은 화합물은 Al$_{2}$O$_{3}$ 기판에 함유된 Al, O가 Ti 후막으로 확산되어 Ti와 반응하여 형성된 것이다. 확산은 Ti 후막이 Al$_{2}$O$_{3}$ 기판 위에 증착될 때 dc 출력, Ar 분압비, 열처리 온도가 증가함에 따라 기판에 인가되는 열에너지가 증가하여 Al과 O의 확산 속도가 증가되었기 때문이다. 정방구조를 가진 Al$_{2}$O$_{3}$기판과 육방구조를 가진 Ti 후막 사이에 정방구조를 가진 TiAl$_{3}$와육방구조를 가진 Ti$_{3}$Al 화합물 층이 형성되어 기판과 후막 사이의 격자 부정합면을 완화시켜 Ti 후막과 Al$_{2}$O$_{3}$ 기판 사이의 접착력을 향상시켰다. dc 출력과 Ar 분압비가 증가할수록 중간층의 두께가 증가였으며, 특히 중간층에 형성된 Ti$_{3}$Al 화합물 층이 두껍게 형성될수록 접착력이 향상되었다. dc 출력, Ar 분압비, 열처리 온도 변화에 따른 Ti 후막의 비저항은 큰 변화를 나타내지 않았다.
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