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펄스 레이저 증착법으로 제작된 Bi<sub>2</sub>O<sub>3</sub>-MgO-ZnO-Nb<sub>2</sub>O<sub>5</sub> 박막의 제작 및 특성 분석
배기열,이동욱,이원재,배윤미,신병철,윤순길,Bae, Ki-Ryeol,Lee, Dong-Wook,Elanchezhiyan, J.,Lee, Won-Jae,Bae, Yun-Mi,Shin, Byoung-Chul,Yoon, Soon-Gil 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.3
Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.
PLD를 이용한 Antimony가 도핑된 p 형 ZnO 박막의 구현
배기열,이동욱,이원재,배윤미,신병철,김일수,Bae, Ki-Ryeol,Lee, Dong-Wook,Elanchezhiyan, J.,Lee, Won-Jae,Bae, Yun-Mi,Shin, Byoung-Chul,Kim, Il-Soo,Shan, F.K. 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.10
Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.
최혜,유광식,배윤미,최준식 충남대학교 생물공학연구소 2007 생물공학연구지 Vol.13 No.-
In this study, we prepared a film-type disc using the biodegradable PLGA (polylactide-co-glycolide) polymer, and we observed the time-dependent release of fluorescent FITC as a model drug from the PLGA disc incubated in phosphate buffered saline solution at 37℃. The thin film-type discs made of PLGA could be applied to various mucous membranes as patches, and the drugs that might be incorporated during the preparation step could be released in a controlled manner by varying various factors making the reagents work directly to the nearby diseased part of the body.