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열처리 효과가 질소이온주입후에 성장시킨 산화막의 $Q_{BD}$ 특성에 미치는 영향
남인호,홍성인,심재성,박병국,이종덕,Nam, In-Ho,Hong, Seong-In,Sim, Jae-Seong,Park, Byeong-Guk,Lee, Jong-Deok 대한전자공학회 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.3
실리콘 기판에 질소를 이온주입한 다음에 게이트 산화막을 2nm, 3nm, 4nm 두께로 성장시켰다. 질소이온주입 에너지는 25keV로 고정하였고 이온주입량은 5.0×10/sup l3//cm/sup 2/과1.0×10/sup 14//cm/sup 2/으로 나누어서 진행하였다. 질소이온주입량과 산화막의 성장률은 밀접한 관계가 있으며 질소이온주입량이 많아지면 산화막의 성장시간이 늘어난다. 같은 두께를 기르는데 필요한 산화시간을 질소이온주입을 하지 않은 경우와 비교하면 질소이온 주입량이 5.0×10/sup 13//cm/sup 2/ 일 때는 약 20%, 1.0×10/sup 14//cm/sup 2/일 때는 약 50% 정도 산화시간이 증가한다. 질소이온 주입량이 증가함에 따라 Q/sub BD/값은 감소하는데 이의 개선을 위해 질소이온주입후에 N/sub 2/분위기에서 850℃ 60분간 열처리를 한 다음 산화막을 성장시키면 Q/sub BD/값이 증가하여 개선됨을 보인다. 이것은 질소이온주입으로 인한 손상이 게이트 산화막의 신뢰성에 나쁜 영향을 미치지만 이온주입직후에 적절한 열처리 공정을 거치면 이러한 손상으로 인한 영향을 없앨 수 있다는 것을 의미한다. Ultra-thin gate oxide was grown on nitrogen implanted silicon substrates. For nitrogen implantation, the energy was fixed at 25keV, but the dose was split into 5.0$\times$10$^{13}$ /c $m^{2}$ and 1.0$\times$10$^{14}$ /c $m^{2}$. The grown gate oxide thickness were 2nm, 3nm and 4nm. The oxidation time to grow 3nm was increased by 20% and 50% for the implanted wafers of 5.0$\times$10$^{13}$ /c $m^{2}$ and 1.0$\times$10$^{14}$ /c $m^{2}$ doses, respectively, when it was compared with control wafers which were not implanted by nitrogen. The value of charge-to-breakdown ( $Q_{BD}$ ) is decreased with increasing nitrogen doses. If an annealing process( $N_{2}$, 85$0^{\circ}C$, 60min.) is peformed after nitrogen implantation, $Q_{BD}$ is increased. It is indicated that nitrogen implantation damage affect gate oxide reliability and the damage can be removed by post-implantation annealing process.
김남동,윤형진,남인호,송인규,이종협 한국물리학회 2012 Current Applied Physics Vol.12 No.4
Nanostructured amorphous Mn oxide, for use as an electrode material in supercapacitors, was prepared by a facile precipitation method using ethanol. After thermal treatment at various temperatures, the structural characteristics and electrochemical properties of the prepared Mn oxide were investigated. Importantly, the experimental results revealed that the alkyl chain of ethanol prevented the excessive crystallization of Mn oxide, resulting in the production of nanostructured Mn oxide. In addition, electrochemical properties of synthesized material were highly dependent on the structural characteristics. Mn oxide thermally treated at 300 ℃, which had an optimized crystalline structure, showed the highest specific capacitance of 161 F/g in this study. Nanostructured amorphous Mn oxide, for use as an electrode material in supercapacitors, was prepared by a facile precipitation method using ethanol. After thermal treatment at various temperatures, the structural characteristics and electrochemical properties of the prepared Mn oxide were investigated. Importantly, the experimental results revealed that the alkyl chain of ethanol prevented the excessive crystallization of Mn oxide, resulting in the production of nanostructured Mn oxide. In addition, electrochemical properties of synthesized material were highly dependent on the structural characteristics. Mn oxide thermally treated at 300 ℃, which had an optimized crystalline structure, showed the highest specific capacitance of 161 F/g in this study.
Si의 변형퍼텐셜 폴라론계에 대한 싸이클로트론 흡수곡선
최상돈,이재훈,남인호 경북대학교 산업기술연구소 1987 産業技術硏究誌 Vol.15 No.-
Choi-Chung's cyclotron resonance lineshape formula is applied to a deformation potential polaron system in Si. The result is in qualitative agreement with the experimental result of Kido et al.
이성민,오인혁,남인호,장석태 한국고분자학회 2021 한국고분자학회 학술대회 연구논문 초록집 Vol.46 No.1
In this study, we demonstrate the facile, electroless deposition of Au electrodes inserted in cotton by a seed-mediated, metal-growth strategy. The sequencable deposition of Au was achieved by the autocatalytic reduction of Au ions with Au nanoparticle seeds which were electrostatically deposited on cotton. The deposition efficiency was significantly improved by effectively removing physisorbed silane molecules on amine-modified cotton. The design was applied to various E-textiles, i.e., wearable heaters, and energy storage devices. The cotton-based, wearable heater exhibited excellent Joule heating properties up to 120 ℃ at 1 V within only 2 s. The wearable supercapacitor with cathode-deposited MnO2 also demonstrated a promising, pseudo-capacitive performance of 167.55 F g<sup>-1</sup> at 0.3 A g<sup>-1</sup>.