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$SiO_{x}F_{y}$/a-Si 구조에 엑시머 레이저 조사에 의해 불소화된 다결정 실리콘 박막 트랜지스터의 전기적 특성과 신뢰도 향상
김천홍,전재홍,유준석,한민구,Kim, Cheon-Hong,Jeon, Jae-Hong,Yu, Jun-Seok,Han, Min-Gu 대한전기학회 1999 전기학회논문지C Vol.48 No.9
We report a new in-situ fluorine passivation method without in implantation by employing excimer laser annealing of $SiO_{x}F_{y}$/a-Si structure and its effects on p-channel poly-Si TFTs. The proposed method doesn't require any additional annealing step and is a low temperature process because fluorine passivation is simultaneous with excimer-laser-induced crystallization. A in-situ fluorine passivation by the proposed method was verified form XPS analysis and conductivity measurement. From experimental results, it has been shown that the proposed method is effective to improve the electrical characteristics, specially field-effect mobility, and the electrical stability of p-channel poly-Si TFTs. The improvement id due to fluorine passivation, which reduces the trap state density and forms the strong Si-F bonds in poly-Si channel and $SiO_2/poly-Si$ interface. From these results, the high performance poly-Si TFTs canbe obtained by employing the excimer-laser-induced fluorine passivation method.
SLS Technology for High Performance Poly-Si TFTs and Its Application to Advanced LCD and SOG
류명관,손곤,김천홍,이정열,Ryu, Myeong-Gwan,Son, Gon,Kim, Cheon-Hong,Lee, Jeong-Yeol The Korean Institute of Electrical and Electronic 2006 전기전자재료 Vol.19 No.9
SLS crystallization and CMOS LTPS process have been developed for high performance and uniform characteristics. By strictly optimizing SLS optics in conventional 2 shot SLS process, threshold voltage variation of 720 pixel TFTs in 2.2-inch QVGA panel (240xRGB) was remarkably decreased from 1.89 V to 0.56 V of 3sigma value. Mobility of the channel doped NTFT and PTFT for circuits were $146\;and\;38cm^{2}/Vs$, respectively. Functional unit circuits for SOG were also fabricated and properly operated.