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황산기가 도입된 감마 알루미나를 이용한 자일로즈 탈수화 반응을 통한 푸르푸랄의 생성
김은규(Eun Gyu Kim),김샛별(Saet Byul Kim),박은덕(Eun Duck Park),김상욱(Sang-Wook Kim) 한국청정기술학회 2011 청정기술 Vol.17 No.1
산성, 중성, 염기성의 감마알루미나에 (3-mercaptopropyl) trimethoxysilane (3-MPTMS)를 알루미나 기공 내에 도입하고 30 wt% 과산화수소수를 이용하여 황산기가 결합된 감마알루미나를 합성하였다. 1 M HCl용액을 이용하여 3-MPTMS의 도입을 좀 더 용이하게 하였다. 합성된 촉매는 자일로즈 탈수화 반응을 통한 푸르푸랄 생성반응에 적용하여 촉매 특성을 분석하였다. 모든 촉매 반응에서 우수한 자일로즈 전환률을 보였고, 황산기가 도입된 촉매가 푸르푸랄의 선택도를 높이는 결과를 보였다. All types of γ-Al₂O₃ such as acidic, neutral and basic forms were chemically modified with (3-mercaptopropyl) trimethoxysilane (3-MPTMS) and oxidized by 30 wt% H₂O₂ solution. As a result, sulfonic acid modified γ-Al₂O₃ catalysts were obtained. Their formation was achieved more easily by treating 1M HCl solution. Their catalytic performance was tested by dehydration reaction of D-xylose to furfural. The sulfonic acid modified γ-Al₂O₃ catalysts showed high conversion (>90%) of Dxylose, and the selectivity to furfural was increased with the amount of sulfonic acid anchored on the catalyst.
황산 표면개질 메조다공 실리카를 이용한 푸르푸랄 제조에 관한 연구
김은규(Eun Gyu Kim),김샛별(Saet Byul Kim),박은덕(Eun Duck Park),김상욱(Sang Wook Kim) 한국청정기술학회 2010 청정기술 Vol.16 No.2
MCM 41, HMS, SBA 15와 같은 메조다공 실리카에 post-synthesis와 co-condensation 방법으로 황산이 결합된 촉매를 제조하였다. 이 메조다공 실리카들을 자일로즈 탈수화반응의 촉매로 사용하여 푸르푸랄을 합성하였으며 관련된 반응특성을 연구하였다. 그 결과, 친환경적 용매인 물을 사용한 경우에도 양호한 전환율과 선택도를 얻을 수 있었다. 아울러 실리카 표면에 황산의 양이 증가할수록 자일로즈의 전환율이 증가하는 것을 알 수 있었고, 동일한 반응 조건에서 다른 고체산 촉매인 제올라이트와 감마알루미나를 사용했을 때 보다 양호한 선택도 결과를 얻었다. Sulfonic acid (-SO₃H) functionalized mesoporous silica containing HMS, SBA 15(S15), MCM 41(M41) were synthesized by post-synthesis and co-condensation method. Their catalytic performance is tested by dehydration reaction of D-xylose to furfural. As a result, good conversion and selectivity was obtained using water as an environmentally friendly solvent. Additionally, increased amounts of sulfuric acid in catalysts resulted in improved conversion of D-xylose. All of the acid-functionalized mesoporous silica showed higher selectivity than other solid acids such as γ-Al₂O₃ and zeolite.
김미경 ( Kim Mi Gyeong ),설현주 ( Seol Hyeon Ju ),김문정 ( Kim Mun Jeong ),박현주 ( Park Hyeon Ju ),신지혜 ( Shin Ji Hye ),최미숙 ( Choi Mi Suk ),이경순 ( Lee Gyeong Sun ),김은규 ( Kim Eun Gyu ) 대한산부인과학회 2003 Obstetrics & Gynecology Science Vol.46 No.7
Heterotopic pregnancy is a condition in which ectopic and intrauterine pregnancies coexist. The reported incidence varies widely form 1 in 1000 to 1 in 30000 pregnancies. Assisted reproductive technologies have led to an increase in the number of heterotopic pregnancies. Because heterotopic pregnancy is difficult to diagnose early and it has high morbidity and mortality rate, careful pelvic examination combined with transvaginal sonogram and serial β-HCG determinations are important. We experienced a case of heterotopic pregnancy in a natural cycle diagnosed by ultrasonogram who continued intrauterine pregnancy successfully.
GaN 완충층 두께가 GaN 에피층의 특성에 미치는 영향
조용석,고의관,박용주,김은규,황성민,임시종,변동진,Jo, Yong-Seok,Go, Ui-Gwan,Park, Yong-Ju,Kim, Eun-Gyu,Hwang, Seong-Min,Im, Si-Jong,Byeon, Dong-Jin 한국재료학회 2001 한국재료학회지 Vol.11 No.7
Metal organic chemical vapor deposition (MOCVB)법을 사용하여 sapphire (0001) 기판 위에 GaN 환충층을 성장하고, 그 위에 GaN 에피층을 성장하였다. GaN 완충층은 55$0^{\circ}C$에서 약 26 nm에서 130 nm까지 각각 다른 두께로 성장하였고, GaN 에피층은 110$0^{\circ}C$에서 약 4 $\mu\textrm{m}$의 두께로 성장하였다. GaN 완충층 성장 후 atomic force microscopy (AFM)으로 표면 형상을 측정하였다. GaN 완충층의 두께가 두꺼워질수록 GaN 에피층의 표면이 매끈해지는 것을 scanning electron microscopy (SEM)으로 관찰하였다. 이것으로 GaN 에피층의 표면은 완충층의 두께와 표면 거칠기와 관계가 있다는 것을 알 수 있었다. GaN 에피층의 결정학적 특성을 double crystal X-ray diffraction (DCXRD)와 Raman spectroscopy로 측정하였다. 성장된 GaN 에퍼층의 광학적 특성을 photoluminescence (PL)로 조사한 결과 두께가 두꺼운 완충층 위에 성장된 에퍼층의 결정성이 더 좋은 반면, 내부 잔류응력은 증가하는 결과를 보였다. 이러한 사실들로부터 완충층의 두께가 두꺼워짐에 따라 내부 자유에너지가 감소하여 에피층 성장시 측면성장을 도와 표면이 매끈해지고, 결정성이 좋아졌다. GaN buffer layer and epilayer have been grown on sapphire (0001) by metal organic chemical vapor deposition (MOCVD). GaN buffer layer ranging from 26 nm to 130 nm in thickness was grown at 55$0^{\circ}C$ prior to the 4 $\mu\textrm{m}$ thick GaN epitaxial deposition at 110$0^{\circ}C$. After GaN buffer layer growth, buffer layer surface was examined by atomic force microscopy (AFM). As the thickness of GaN buffer layer was increased, surface morphology of GaN epilayer was investigated by scanning electron microscopy (SEM). Double crystal X-ray diffraction (DCXRD) and Raman spectroscopy were employed to study crystallinity of GaN epilayers. Optical properties of GaN epilayers were measured by photoluminescence (PL). The epilayer grown with a thin buffer layer had rough surface, and the epilayer grown with a thick buffer layer had mirror-like surface of epilayer. Although the stress on the latter was larger than on the former, its crystallinity was much better. These results imply that the internal free energy is decreased in case of the thick buffer layer. Decrease in internal free energy promotes the lateral growth of the GaN film, which results in the smoother surface and better crystallinity.
최영호,서홍주,임영혁,김정중,박성강,이석기,임진수,김은규 조선대학교 2001 The Medical Journal of Chosun University Vol.26 No.2
Pulmonary blastoma is a very rare primary neoplasm of the lung. We experienced a case of pulmonary blastoma in a 40 years old man. The mediobasal segmentectomy of the right lower lobe was performed. The patient was discharge on the postoperative days 6. There is no evidence of recurrence or metastasis on followup study during 7 months period after operation.