http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
김윤장,김진원,장성근,Kim, Youn-Jang,Kim, Jin-Won,Chang, Sung-Keun 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.4
Pure $BiFeO_3$ (BFO) and codoped $Bi_{0.9}A_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (A=Eu, Dy) thin films were prepared on Pt(111)/Ti/$SiO_2$/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the $Bi_{0.9}Eu_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BEFZO) and $Bi_{0.9}Dy_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BDFZO) thin films were about 36 and $26{\mu}C/cm^2$ at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and $1.21{\times}10^{-6}A/cm^2$, respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.
화학 용액 증착법으로 제조한 Bi0.9A0.1Fe0.975Zn0.025O3-δ (A=Eu, Dy) 박막의 구조와 전기적 특성
김윤장,김진원,장성근 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.4
Pure BiFeO3 (BFO) and codoped Bi0.9A0.1Fe0.975Zn0.025O3-δ (A=Eu, Dy) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the Bi0.9Eu0.1Fe0.975Zn0.025O3-δ(BEFZO) and Bi0.9Dy0.1Fe0.975Zn0.025O3-δ (BDFZO) thin films were about 36 and 26 μC/cm2 at the maximum electric fieldsof 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electricalproperties, and leakage current densities of 3.68 and 1.21×10–6 A/cm2, respectively, which were three orders of magnitudelower than that of the pure BFO film, at 100 kV/cm.
김윤장,김해진,김진원,라그하반,김상수 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.3
We prepared pure BiFeO<SUB>3</SUB> (BFO) and (Bi<SUB>0.9</SUB>La<SUB>0.1</SUB>)(Fe<SUB>0.975</SUB>Zn<SUB>0.025</SUB>)O<SUB>3-δ</SUB> (BLFZO) thin films on Pt(111)/Ti/SiO<SUB>2</SUB>/Si(100) substrates by using a chemical solution deposition method. The improved electrical properties were observed in the co-doped BLFZO thin film. The leakage current density of the BLFZO thin film showed four orders lower than that of the pure BFO, 4.17 ?10<sup>-7</sup> A/cm<sup>2</sup> at 100 kV/cm. The remnant polarization (2<i>P<sub>r</sub></i>) and the coercive electric field (2<i>E<sub>c</sub></i>) of the BLFZO thin film were 97 μC/cm<sup>2</sup> and 903 kV/cm at applied electric field of 972 kV/cm and at a frequency of 1 kHz and the values were decreased with increasing measurement frequency, 63 μC/cm<sup>2</sup> and 679 kV/cm at 10 kHz, respectively. Also, after 1.44 ?10<sup>10</sup> cycles the better fatigue endurance was observed in the BLFZO thin film, which is 90% of its initial value. And we confirm that the remnant polarization (2<i>P<sub>r</sub></i>) and the coercive electric field (2<i>E<sub>c</sub></i>) were fairly saturated above measurement frequency of 15 kHz for the BLFZO thin film.
EEPROM 셀에서 폴리실리콘 플로팅 게이트의 도핑 농도가 프로그래밍 문턱전압에 미치는 영향
장성근,김윤장,Chang, Sung-Keun,Kim, Youn-Jang 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.2
We have investigated the effects of doping concentration in polysilicon floating gate on the endurance characteristics of the EEPROM cell haying the structure of spacer select transistor. Several samples were prepared with different implantation conditions of phosphorus for the floating gate. Results show the dependence of doping concentration in polysilicon floating gate on performance of EEPROM cell from the floating gate engineering point of view. All of the samples were endured up to half million programming/erasing cycle. However, the best $program-{\Delta}V_{T}$ characteristic was obtained in the cell doped at the dose of $1{\times}10^{15}/cm^{2}$.
Eu와 V 동시 도핑에 의한 BiFeO3 박막의 구조와 전기적 특성
장성근,김윤장 한국전기전자재료학회 2019 전기전자재료학회논문지 Vol.32 No.3
Pure BiFeO3 (BFO) and (Eu, V) co-doped Bi0.9Eu0.1Fe0.975V0.025O3+δ (BEFVO) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by chemical solution deposition. The effects of co-doping were observed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the BEFVO thin film were improved as compared to those of the pure BFO thin film. The remnant polarization (2Pr) of the BEFVO thinfilm was approximately 26 μC/cm2 at a maximum electric field of 1,190 kV/cm with a frequency of 1 kHz. The leakage current density of the co-doped BEFVO thin film (4.81×10–5 A/cm2 at 100 kV/cm) was two orders of magnitude lower than of that of the pure BFO thin film. Pt (111) / Ti / SiO2 / Si (100) 기판 상에 순수 BiFeO3 (BFO) 및 유로퓸을 동시 도핑한 Bi0.9Eu 0.1Fe0.975V0.025O3 + δ(BEFVO) 박막을 화학 물질 용액 증착법으로 형성하였다. X 선 회절, 라만 분광법 및 주사 전자 현미경을 사용하여 동시 도핑의 영향을 관찰하였다. 순수한 BFO 박막과 비교하여 BEFVO 박막의 전기적 특성이 향상됨을 확인했습니다. BEFVO 박막의 잔류 분극 (2Pr)은 1 kHz의 주파수에서 1190 kV/cm의 최대 전기장에서 약 26 μC/cm2을 보였고. 동시 도핑 된 BEFVO의 누설 전류 밀도는 100 kV/cm에서 순수한 BFO 박막의 누설 전류 밀도보다 100배 낮은 4.8 x 10-5 A/cm2 을 보였다.
Eu와 V 동시 도핑에 의한 BiFeO<sub>3</sub> 박막의 구조와 전기적 특성
장성근,김윤장,Chang, Sung-Keun,Kim, Youn-Jang 한국전기전자재료학회 2019 전기전자재료학회논문지 Vol.32 No.3
Pure $BiFeO_3$ (BFO) and (Eu, V) co-doped $Bi_{0.9}Eu_{0.1}Fe_{0.975}V_{0.025}O_{3+{\delta}}$ (BEFVO) thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by chemical solution deposition. The effects of co-doping were observed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the BEFVO thin film were improved as compared to those of the pure BFO thin film. The remnant polarization ($2P_r$) of the BEFVO thin film was approximately $26{\mu}C/cm^2$ at a maximum electric field of 1,190 kV/cm with a frequency of 1 kHz. The leakage current density of the co-doped BEFVO thin film ($4.81{\times}10^{-5}A/cm^2$ at 100 kV/cm) was two orders of magnitude lower than of that of the pure BFO thin film.
장성근,김윤장 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.7
We prepared BiFeO3 (BFO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemicalsolution deposition method and then annealed in Air, N2 and O2 atmospheres. Improved electricalproperties were observed in the BFO thin film annealed in a N2 atmosphere. The leakage currentdensity of the BFO thin film annealed in a N2 atmosphere 3.2 × 10−7 A/cm2 at 100 kV/cm wasthree orders of the magnitude lower than that of the BFO thin film annealed in an O2 atmosphere. The remnant polarization (2Pr) and the coercive electric field (2Ec) values of the BFO thin filmannealed in a N2 atmosphere were 28 C/cm2 and 672 kV/cm at a maximum electric field of 640kV/cm with a frequency of 10 kHz. Also, we confirmed that the 2Pr was fairly saturated at ameasurement frequency of about 20 kHz for the BFO thin film annealed in a N2 atmosphere.
평면구조 P-MOS DRAM 셀의 커패시터 V<sub>T</sub> 이온주입의 최적화
장성근,김윤장,Chang Sung-Keun,Kim Youn-Jang 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.2
We investigated an optimized condition of the capacitor threshold voltage implantation(capacitor $V_T$ Implant) in planar P-MOS DRAM Cell. Several samples with different condition of the capacitor $V_T$ Implant were prepared. It appeared that for the capacitor $V_T$ Implant of $BF_2\;2.0{\times}l0^{13}\;cm^{-2}$ 15 KeV, refresh time is three times larger than that of the sample, in which capacitor $V_T$ Implant is in $BF_2\;1.0{\times}l0^{13}\;cm^{-2}$ 15 KeV. Raphael simulation revealed that the lowed maximum electric field and lowed minimum depletion capacitance ($C_{MIN}$) under the capacitor resulted in well refresh characteristics.