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KMPR을 이용한 다층구조물 제작 및 전해도금을 이용한 니켈몰드 제작
황성진(Sung Jin Hwang),정필구(Phill Gu Jung),고정상(Jeung Sang Ko),고종수(Jong Soo Ko),정임덕(Im Deok Jeong),김인곤(In Gon Kim) 한국정밀공학회 2006 한국정밀공학회 학술발표대회 논문집 Vol.2006 No.5월
In this paper, we proposed XP KMPR-1050 negative tone resist to replace SU-8 resist for multi-layer microstructures and thick plating mold fabrication using UV-LIGA process. XP KMPR resist proposed in this paper can be easily striped using a common stripping solution such as NMP without damage of micro-structure. The conditions for the fabrication of XP KMPR micro-structure were optimized by adjustment of exposure and post-exposure bake(PEB). The 140㎛-thick and an aspect ratio at least 10 micro-structure and multi-layer structures were successfully fabricated through the process conditions. Through-mold electroplating and PR striping of XP KMPR has been successfully demonstrated.
고밀도 평판형 유도결합 BCl<sub>3</sub>/SF<sub>6</sub> 플라즈마를 이용한 GaAs/AlGaAs와 InGaP 반도체의 선택적 식각에 관한 연구
유승열,류현우,임완태,이제원,조관식,전민현,송한정,이봉주,고종수,고정상,Yoo Seungryul,Ryu Hyunwoo,Lim Wantae,Lee Jewon,Cho Guan Sik,Jeon Minhyon,Song Hanjung,Lee BongJu,Ko Jong Soo,Go Jeung Sang,Pearton S. J. 한국재료학회 2005 한국재료학회지 Vol.15 No.3
We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled $BCl_3/SF_6$ plasmas. The process parameters were ICP source power (0-500 W), RE chuck power (0-30W) and gas composition $(60-100\%\;BCl_3\;in\;BCl_3/SF_6)$. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. $BCl_3/SF_6$ selective etching of GaAs showed quite good results in this study. Selectivities of GaAs $(GaAs:AlGaAs\~36:1,\;GaAs:InGaP\~45:1)$ were superior at $18BCl_3/2SF_6$, 20 W RF chuck power, 300 W ICP source power and 7.5 mTorr. Addition of $(5-15\%)SF_6\;to\;BCl_3$ produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP (boiling points of etch products: $AlF_3\~1300^{\circ}C,\;InF_3>1200^{\circ}C$ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface$(RMS\~9nm)$. XPS study on the surface of processed GaAs proved a very clean surface after dry etching. It shows that planar inductively coupled $BCl_3/SF_6$ plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP.