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우황청심원 관련 최근 연구 동향 : 국내 논문에 대한 고찰
이제원,백경민,백영두,임은영,장우석,전우현,정인권,Lee, Je-Won,Baek, Kyung-Min,Baek, Young-Doo,Im, Eun-Young,Chang, Woo-Seok,Cheon, Woo-Hyun,Chung, In-Kwon 대한한방내과학회 2010 大韓韓方內科學會誌 Vol.31 No.4
Objectives : Woohwangchungsim-won has been used for acute diseases such as cerebrovascular disease (stroke), heart disease. The aim of this study was to determine the effects, significance & necessity of Woohwangchungsim-won in acute stages of these disease by reviewing Korean articles about Woohwangchungsim-won. Methods : Article searches were performed on 8 major Korean web article search engine from January 1980 to August 2010. There were no restrictions on the types of publication, including grey articles. Results : Forty-three articles were included. Twenty one were efficacy tests, thirteen were comparative efficacy tests, eight were toxicity tests, and one was new method development. Eighteen articles were multicenter studies and twenty five were single center studies. Thirty two articles were animal testing, only ten articles were clinical articles. Thirty seven articles presented the composition and quantity of Woohwangchungsim-won, but six did not. Conclusions : The results of Korean articles about Woohwangchungsim-won can not strongly support the effects, significance & necessity of Woohwangchungsim-won. More rigorous studies are required for determination of the effects of Woohwangchungsim-won.
Navigation Signals Based on Orthogonal Tiered Polyphase Code
이제원,김정빈,김갑진,송기원,안재민 사단법인 항법시스템학회 2015 Journal of Positioning, Navigation, and Timing Vol.4 No.3
A navigation signal based on orthogonal tiered polyphase code was proposed. For the proposed signal, tiered polyphase code was used as the code of a pilot channel. Tiered polyphase code is a complex number type code, and thus the pilot channel and data channel were separated using the Walsh code which makes the correlation between different codes become 0. The results of the simulation indicated that the correlation characteristics and signal acquisition performance of the proposed signal were identical to those of tiered polyphase code, and that the disadvantage of tiered polyphase code could be supplemented through a data channel in terms of signal tracking.
Spray-Load 교체구문에서 한정명사구의 전체적 해석을 위한 통사기반 연구
이제원 한국중앙영어영문학회 2018 영어영문학연구 Vol.60 No.1
As other alternating verb constructions, there are more than mere difference in the order of internal arguments in Spray-Load alternation constructions. Many semantic/pragmatic differences also can be found between the alternants. One of the differences is that when the argument which takes GOAL/CONTAINER role is an NP, we can interpret that the argument is affected wholly by the argument which is given THEME/CONTAINEE role. In the other alternant, where the argument which takes GOAL/CONTAINER role is an PP, the argument is affected only partially by the other argument which bears THEME/CONTAINEE role. Although some semantic and pragmatic conditions should be met for the holistic reading in the GOAL/CONTAINER NP argument, these conditions alone can not account for the reason that holistic reading can only be found just in one alternant. Ultimately, it can be found that the syntactic structure might be the basis for semantic/pragmatic conditions to be applied to the constructions which might result in the construal difference in two alternants, and thus from the finding it can be conjectured that many semantic/pragmatic phenomenon might depend on the syntactic structures.
확산펌프 기반의 BCl₃ 축전결합 플라즈마를 이용한 GaAs와 AlGaAs의 건식 식각
이제원,이성현,박주홍,최경훈,송한정,조관식 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.4
We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled BCl3 plasma. Process variables were chamber pressure (50~180 mTorr), CCP power (50~200 W) and BCl3 gas flow rate (2.5~10 sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the BCl₃ plasma during etching. We have achieved 0.25 µm/min of GaAs etch rate with only 5 sccm BCl₃ flow rate when the chamber pressure was in the range of 50~130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With 100~200 W CCP power, etch rates of the materials increased over 0.3 µm/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm BCl3 flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more BCl3 gas flow rates. By contrast, GaAs was etched at ~0.3 µm/min at the 2.5 sccm BCl3 flow rate condition. A broad molecular peak was noticed in the range of 500~700 nm wavelength during the BCl₃ plasma etching. SEM photos showed that 10 sccm BCl₃ plama produced more undercutting on GaAs sidewall than 5 sccm BCl₃ plasma. 본 논문은 확산펌프 기반의 축전 결합형 BCl3 플라즈마를 사용하여 GaAs와 AlGaAs를 건식 식각한 연구에 관한 것이다. 실험에서 사용한 압력 범위는 50~180 mTorr, CCP 파워는 50~200 W, BCl₃ 가스 유량은 2.5~10 sccm 이었다. 식각 후에 GaAs와 AlGaAs의 식각 속도와 표면 거칠기분석은 표면 단차 측정기를 이용하여 하였다. GaAs의 식각 벽면과 표면 상태는 전자 현미경으로 분석하였다. 식각 중 플라즈마의 광 특성 분석은 광학 발광 분석기를 이용하였다. 본 실험을 통하여 5 sccm의 소량의 BCl3₃가스 유량으로 공정 압력이 130 mTorr이내인 경우에는, 100 W CCP 파워의 조건에서 GaAs는 약 0.25 µm/min 이상의 우수한 식각 속도를 얻을 수 있었다. AlGaAs의 경우는 GaAs의 식각 속도보다 조금 낮았다. 그러나 같은 유량에서 공정 압력이 180 mTorr로 높아지면 GaAs와 AlGaAs의 식각 속도가 급격히 감소하여 거의 식각되지 않는 것을 알 수 있었다. 또한 CCP 파워의 경우에는 50 W의 파워에서는 GaAs와 AlGaAs 모두 거의 식각되지 않았다. 그러나 100~200 W의 조건에서는 0.3 µm/min 이상의 높은 식각 속도를 주었다. 두 결과를 보았을 때 축전결합형 BCl₃ 플라즈마 식각에서 GaAs와 AlGaAs의 식각 속도는 CCP 파워가 100~200 W 범위에 있으면 그 값에 비례하지 않고 거의 일정한 값이 된다는 사실을 알았다. 75 mTorr, 100 W의 CCP 파워 조건에서 BCl₃의 유량 변화에 따른 GaAs와 AlGaAs의 식각 속도의 경우, BCl₃의 유량이 2.5 sccm의 소량일 때는 GaAs는 식각 속도가 높았지만 AlGaAs는 거의 식각되지 않는 흥미로운 결과를 얻었다. 플라즈마 발광 특성을 보면 BCl₃ 축전 결합 플라즈마는 주로 500~700 nm 범위를 가지는 넓은 분자 피크만 만든다는 것을 알 수 있었다. 전자 현미경 사진 결과에서는 5 sccm과 10 sccm의 BCl₃ 플라즈마 모두 식각 중에 GaAs의 벽면을 언더컷팅 하였으며, 10 sccm의 BCl₃ 유량을 사용하였을 때 언더컷팅이 더 심했다.