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자동차용 WBG 전력반도체 및 전력변환 모듈과 ETRI GaN 소자 기술
고상춘,장우진,정동윤,박영락,전치훈,남은수,Ko, S.C.,Chang, W.J.,Jung, D.Y.,Park, Y.R.,Jun, C.H.,Nam, E.S. 한국전자통신연구원 2014 전자통신동향분석 Vol.29 No.6
본고는 최근 화두가 되고 있는 에너지 절감을 위해 고효율, 친환경의 WBG(Wide Band-Gap) 화합물반도체인 SiC(Silicon Carbide), GaN(Gallium Nitride) 전력반도체 소자 및 전력변환 모듈의 기술동향과 ETRI에서 연구개발 진행 중인 GaN 전력반도체 관련 기술에 대해 기술한다. WBG 전력반도체는 기존의 실리콘 전력반도체와 비교하여 열 특성 향상, 고속 스위칭, 고전압/고전류 특성 및 스위칭 손실 최소화 등이 가능하고 이에 따른 시스템의 소형화 및 전력효율 향상 효과를 얻을 수 있다. 특히, GaN 전력반도체 소자는 시장이 가장 넓게 형성되어 있는 900V 이하에 적용이 가능하며, 앞으로 시장이 커질 것으로 예상되는 HEV(Hybrid Electric Vehicle)/EV(Electric Vehicle)의 친환경 자동차에도 활용될 것으로 기대되고 있다. 본고는 최근의 일본과 미국에서의 WBG 전력반도체에 대한 관심 및 투자 방향과 GaN 전력반도체 소자에 대한 해외 기업의 업계동향에 대해서도 함께 살펴본다. 이러한 WBG 전력반도체에 대한 해외 선진업체의 산업동향과 더불어 ETRI에서 연구개발 중인 GaN 전력반도체 기술현황에 대해 전력소자 설계 및 제조공정, 패키징, 전력모듈 설계 제작 기술을 포함하여 기술한다.
윤호경,문석환,고상춘,황건,최태구,Yun, Ho-Gyeong,Moon, Seok-Hwan,Ko, Sang-Choon,Hwang, Gunn,Choy, Tae-Goo 대한기계학회 2002 大韓機械學會論文集B Vol.26 No.9
In this study, to make an excellent heat pipe, the manufacturing technology of a sintered wick was investigated. Making a sintered wick is known to be very difficult but it has many advantages. For example, the porosity and pore size can be controlled and the capillary force is great. The mixture of copper and pore former powder was used as a wick material and ceramic-coated stainless steel was used as a mandrel which is necessary for vapor flow. To analyze the feature of the manufactured wick, not only porosity and pore size were measured but also the sintered structure was observed. A heat pipe with sintered wick was manufactured and the performance test of the heat pipe was performed in order to review cooling performance. The performance test results for the 4mm diameter heat pipe with the sintered wick shows the stability since the temperature difference between a evaporator and a condenser of the heat pipe is less than 4.4$^{\circ}C$, and thermal resistance is less than 0.7$^{\circ}C$/W, In the meantime the composite wick that is composed with sintered and woven wire was also examined. The heat transfer limit of the heat pipe with composite wick was enhanced about 51%~60% compare to the one with sintered wick.
Design of Parasitic Inductance Reduction in GaN Cascode FET for High-Efficiency Operation
장우진,박영락,문재경,고상춘 한국전자통신연구원 2016 ETRI Journal Vol.38 No.1
This paper presents a method of parasitic inductance reduction for high-speed switching and high-efficiency operation of a cascode structure with a low-voltage enhancement-mode silicon (Si) metal–oxide–semiconductor field-effect transistor (MOSFET) and a high-voltage depletion-mode gallium nitride (GaN) field-effect transistor (FET). The method is proposed to add a bonding wire interconnected between the source electrode of the Si MOSFET and the gate electrode of the GaN FET in a conventional cascode structure package to reduce the most critical inductance, which provides the major switching loss for a high switching speed and high efficiency. From the measured results of the proposed and conventional GaN cascode FETs, the rising and falling times of the proposed GaN cascode FET were up to 3.4% and 8.0% faster than those of the conventional GaN cascode FET, respectively, under measurement conditions of 30 V and 5 A. During the rising and falling times, the energy losses of the proposed GaN cascode FET were up to 0.3% and 6.7% lower than those of the conventional GaN cascode FET, respectively.