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금속 후면 반사막이 GaAs 태양전지의 효율에 미치는 영향
최원정(Wonjung Choi),김창주(Chang Zoo Kim),강호관(Ho Kwan Kang),조성진(Sungjin Jo) 한국태양광발전학회 2014 Current Photovoltaic Research Vol.2 No.2
To investigate the effect of metal back-reflective layers (MBLs) on the performance of GaAs solar cells, we fabricated GaAs solar cells on Al and Ag metal layers using the transfer printing technique. We also investigated the effect of MBL texturing on the performance of transfer printed GaAs solar cells. Transfer printed solar cells with MBLs exhibited improved photovoltaic performance compared to solar cells without MBLs due to light trapping. We demonstrated GaAs solar cells with MBLs on a flexible substrate and performed systematic bending tests. All the measured characteristics of solar cells showed little change in performance.
InGaP/GaAs 이중접합 기반의 고효율 플렉시블 태양전지 제조기술 연구
문승필(Seungpil Moon),김영조(Youngjo Kim),김강호(Kangho Kim),김창주(Chang Zoo Kim),정상현(Sang Hyun Jung),신현범(Hyun-Beom Shin),박경호(Kyung Ho Park),박원규(Won-Kyu Park),안연식(Yeon-Shik Ahn),강호관(Ho Kwan Kang) 한국태양광발전학회 2016 Current Photovoltaic Research Vol.4 No.3
III-V compound semiconductor based thin film solar cells promise relatively higher power conversion efficiencies and better device reliability. In general, the thin film III-V solar cells are fabricated by an epitaxial lift-off process, which requires an AlxGa1-xAs (x≥0.8) sacrificial layer and an inverted solar cell structure. However, the device performance of the inversely grown solar cell could be degraded due to the different internal diffusion conditions. In this study, InGaP/GaAs double-junction solar cells are inversely grown by MOCVD on GaAs (100) substrates. The thickness of the GaAs base layer is reduced to minimize the thermal budget during the growth. A wide band gap p-AlGaAs/n-InGaP tunnel junction structure is employed to connect the two subcells with minimal electrical loss. The solar cell structures are transferred on to thin metal films formed by Au electroplating. An AlAs layer with a thickness of 20 nm is used as a sacrificial layer, which is removed by a HF:Acetone (1:1) solution during the epitaxial lift-off process. As a result, the flexible InGaP/GaAs solar cell was fabricated successfully with an efficiency of 27.79% under AM1.5G illumination. The efficiency was kept at almost the same value after bending tests of 1,000 cycles with a radius of curvature of 10 mm.
방열 특성에 따른 집광형 태양전지의 광전변환효율 변화에 관한 실험적 연구
김강호(Kangho Kim),정상현(Sang Hyun Jung),김영조(Youngjo Kim),김창주(Chang Zoo Kim),전동환(Dong Hwan Jun),신현범(Hyun-Beom Shin),이재진(Jaejin Lee),강호관(Ho Kwan Kang) 한국태양광발전학회 2014 Current Photovoltaic Research Vol.2 No.4
Under concentrated illuminations, the solar cells show higher efficiencies mainly due to an increase of the open circuit voltage. In this study, InGaP/InGaAs/Ge triple-junction solar cells have been grown by a low pressure metalorganic chemical vapor deposition. Photovoltaic characteristics of the fabricated solar cells are investigated with a class A solar simulator under concentrated illuminations from 1 to 100 suns. Ideally, the open circuit voltage should increase with the current level when maintained at the same temperature. However, the fabricated solar cells show degraded open circuit voltages under high concentrations around 100 suns. This means that the heat sink design is not optimized to keep the cell temperature at 25°C. To demonstrate the thermal degradation, changes of the device performance are investigated with different bonding conditions and heat sink materials.