YBa₂Cu₃Ox 분말과 첨가제 BaPbO₃를 이용한 초전도체 제작

추순남,박정철,Chu, Soon-Nam,Park, Jung-Cheul 한국정보통신학회 2011 한국정보통신학회논문지 Vol.15 No.8

미세 입자 크기를 갖는 $YBa_2Cu_3Ox$(YBCO) 초전도 분말을 이용하여 $BaPbO_3$ 첨가에 따른 $YBa_2Cu_3Ox$ 초전도 벌크의 임계전류를 향상시키는 요소인 시편의 밀도와 결정들의 정렬 상태를 향상시키고, 기공도를 감소시키기 위한 연구를 수행하였다. 졸겔법으로 미세 크기를 갖는 $YBa_2Cu_3Ox$ 초전도 분말을 합성하여 입자의 크기가 0.2~1 ${\mu}m$의 미세한 분포를 갖는 초전도 분말을 사용하고, $YBa_2Cu_3Ox$ 초전도 시편의 입자 성장을 촉진시키고, 기공과 입계간의 약연접을 감소시키기 위하여 금속 물질 및 구조 화합물인 $BaPbO_3$를 10~30 wt%를 첨가하여 시편을 제작하고 특성을 관찰하였다. 나노 크기를 갖는 YBCO 분말과 $BaPbO_3$ 20 wt%를 첨가하여 제작한 $YBa_2Cu_3Ox$ 초전도 시편은 일반적인 벌크 제작법으로 제작된 시편과 비교하여 임계전류가 20% 향상된 4.74A를 얻었다. In this paper, as an attempt to improve the preparation conditions of $YBa_2Cu_3Ox$ superconducting bulk samples, the properties of $YBa_2Cu_3Ox$ superconductor depending on the particle size of YBCO powder and $BaPbO_3$ as an additive have been investigated, and a study on the effects of additive to the density, grain alignment, and porosity of samples that affect the critical current of superconductor has been performed. In order to prepare superconductor, $YBa_2Cu_3Ox$ powder synthesized by sol-gel method, showing a size distribution of 0.2~1 ${\mu}m$ was used. The $BaPbO_3$ added to promote grain growth and to decrease porosities and weak links between grain boundaries of $YBa_2Cu_3Ox$ superconductors. In the samples prepared by sol-gel synthesized powder with 10, 20, and 30 wt% conductive $BaPbO_3$ additives, the sample with 20 wt% $BaPbO_3$ obtained the highest critical current of 4.74 A, showing 20 wt% higher critical current than that with solid state synthesized powder.

조성비 변화에 의한 CIGS박막 특성에 관한 연구

추순남,박정철,Chu, Soon-Nam,Park, Jung-Cheul 한국정보통신학회 2012 한국정보통신학회논문지 Vol.16 No.10

본 논문은 동시진공증발법(co-evaporation method)으로 CIGS 박막(thin film)을 제작을 하였다. 제작과정 중 기판온도(substrate temperature)변화와 Ga/(In+Ga) 조성비(composition ratio) 변화에 따른 저항율(resistivity) 및 흡수스펙트럼(absorbance spectra)을 측정하였다. 기판온도가 상승하면 저항율이 감소하였으며, Ga/(In+Ga) 조성비가 0.30에서 0.72까지 증가됨에 따라 밴드갭(band gap)이 1.26eV, 1.30eV, 1.43eV,1.47eV로 증가됨을 알 수 가 있었다. 동일한 조건에서 조성비를 증가하므로써 두께가 증가되었으며 저항율은 감소하였다. 본 실험을 통하여 CIGS 박막을 제작하면 광흡수률(optical absorbance ratio) 및 광전류(optical current)가 증가 될 것으로 예측할 수가 있다. In this paper, we produced CIGS thin film by co-evaporation method. During the process, substrate temperature and Ga/(In+Ga) composition ratio was altered to observe the change of resistivity and absorbance spectra measurements. As substrate temperature increased, resistivity decreased and as Ga/(In+Ga) composition ratio increased from 0.30 to 0.72, band gap also increased with the range of 1.26eV, 1.30eV, 1.43eV, 1.47eV. With the constant condition of composition ratio, resistivity decreased with increased thickness of the thin film. On this experiment, we assumed that optical absorbance ratio and optical current will be increased with CIGS thin film fabrication.

반응성 스퍼터링법으로 AI/AIN/GaAs 커패시터 제조시 (NH₄)₂S 처리에 따른 전기적 특성

추순남,권정열,박정철,이헌용,Chu, Soon-Nam,Kwon, Jung-Youl,Park, Jung-Cheul,Lee, Heon-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.1

In MIS capacitor structure, we have studied the electrical properties in Ammonium Sulfide solution treatment while AIN thin film as a insulator is being formed by reactive sputtering method. The deposition process conditions of AIN thin film we temperature $250^{\circ}C$, DC Power 150 W, pressure 5 mTorr and 8 sccm(Ar : 4 sccm, $N_{2}$ : 4 sccm). The surface of GaAs was treated with Ammonium Sulfide solution, it was shown the leakage current was less than $10^{-8}\;A/cm^{2}$. The deep depletion phenomena of inverse area with treating Ammonium Sulfide solution in C-V analysis was improved as compared the condition of without Ammonium Sulfide solution and hysteresis property as well.

열처리에 의한 Cu(In,Ga)Se₂ 태양전지 특성에 관한 연구

추순남,박정철,Chu, Soon-Nam,Park, Jung-Cheul 한국정보통신학회 2013 한국정보통신학회논문지 Vol.17 No.12

본 논문은 동시진공증발법으로 제작된 시편을 $500^{\circ}C$에서 열처리한 시편은 기공이 많이 발생되어 결정결함이 발생 되었어 열처리 시 Se분위기하에서 실행을 해야 된다는 것을 알 수가 있었다. 기판온도를 $430^{\circ}C$, $460^{\circ}C$, $480^{\circ}C$, $500^{\circ}C$로 변화주어 제작된 시편을 열처리 한 결과 결정입자 크기가 증가되어 밀도가 향상되었다. 그리고 XRD 분석결과, 열처리 후에 Cu2Se상이 제거되었으며 열처리 전 후의 흡수지수는 큰 변화가 없었다. 이것은 흡수지수는 열처리보다 시편 두께에 의해 결정된다는 것을 알 수가 있었다. In this paper, we prepared the samples with the heat-treated substrate by means of co-evaporation method. The samples prepared with heat-treated substrate of $500^{\circ}C$showed the vacancy on the surface, and it could be prevented by Se ambient condition. The samples prepared with variable heat-treated substrates such as $430^{\circ}C$, $460^{\circ}C$, $480^{\circ}C$ and $500^{\circ}C$ showed the increase of grain resulted to the increase of the density. Based on the XRD analysis, the heat treatment could remove the Cu2Se phase of the samples, but it didn't affect the absorption index of the samples. We, therefore, conclude the absorption index is not affected by heat treatment and is controlled by the thickness of the sample.

BTS 방법을 사용한 Low-K 유전체 물질들과 산화막의 Cu 드리프트 확산에 대한 비교 연구

추순남,권정열,김장원,박정철,이헌용,Chu, Soon-Nam,Kwon, Jung-Youl,Kim, Jang-Won,Park, Jung-Cheul,Lee, Heon-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.2

Advanced back-end processing requires the integration of low-k dielectrics and Cu. However, in the presence of an electric field and a temperature, positive Cu ions may drift rapidly through dielectric and causing reliability problems. Therefore, in this paper, Cu+ drift diffusion in two low-k materials and silicon oxide is evaluated. The drift diffusion is investigated by measuring shifts in the flat band voltage of capacitance-voltage measurements on Cu gate capacitors after bias thermal stressing. The Cu+ drift late in $SiO_{x}C_{y}\;(2.85{\pm}0.03)$ and Polyimide(2.7${\leq}k{\leq}3.0$) is Considerably lower than in thermal oxide.

반응성 스퍼터링으로 제조한 MIS 소자용 AIN 절연박막의 전기전도 메커니즘

秋順男(Soon-Nam Chu),朴正哲(Jung-Cheul Park),權廷烈(Jung-Youl Kwon),李憲用(Heon-Yong Lee) 대한전기학회 2007 전기학회논문지 Vol.56 No.4

We have studied the variable conditions of reactive sputtering to prepare AIN thin film. The leakage current showed below 10??A/㎠ at the deposition temperature of 250℃ and 300℃ in the field of 0.1 ㎹/㎝, and it was gradually increased and to be saturated in 0.2 ㎹/㎝. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 ㎹/㎝, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.

동시진공증발법을 이용한 Cu(In,Ga)Se₂ 박막 제작에 관한 연구

박정철,추순남,Park, Jung-Cheul,Chu, Soon-Nam 한국정보통신학회 2012 한국정보통신학회논문지 Vol.16 No.10

동시진공증발법(co-evaporation)으로 Cu(In,Ga)$Se_2$ 박막을 제작하는 논문으로서 1단계($1^{st}$-stage)에서 기판온도(substrate temperature)가 $400^{\circ}C$에서 $In_2Se_3$상($In_2Se_3$ phase)이 존재하였으며 2,3단계($2^{nd}$-stage, $3^{rd}$-stage)에서 기판온도 변화에 따른 흡수 스펙트럼(absorbency spectrum)은 차이가 크지 않다. 이것은 박막의 두께가 전부 $1{\mu}m$ 이상이므로 흡수 스펙트럼(absorbency spectrum)은 거의 차이가 없다. 2,3단계에서 기판온도 변화에 따른 SEM과 XRD를 분석한 결과, 기판온도가 증가할수록 결정구조(crystal structure)의 밀도(density)가 증가하고 기공(vacancy)이 감소하며 $480^{\circ}C$, $500^{\circ}C$에서 Cu(In0.7Ga0.3)$Se_2$상(${\mu}m$)이 형성되었다. This research is based on fabricating Cu(In,Ga)$Se_2$ thin-film by co-evaporation method. On $1^{st}$ - stage, $In_2Se_3$ phase appeared when the substrate temperature reached to $400^{\circ}C$, however, there was small effect between the substrate temperature and absorbency spectrum on $2^{nd}$, $3^{rd}$ - stage because the average thickness of the thin-film was $1{\mu}m$ or higher. SEM and XRD was measured on $2^{nd}$ and $3^{rd}$ stage and it showed as the substrate temperature increases, the density of the crystal structure increased with the decreament of the vacancy. Furthermore, the formation of Cu(In0.7Ga0.3)$Se_2$ phase showed at $480^{\circ}C$ and $500^{\circ}C$.

An Optimized PWM Switching Strategy for an Induction Motor Voltage Control

한상수,추순남,Han, Sang-Soo,Chu, Soon-Nam The Korea Institute of Information and Commucation 2009 한국정보통신학회논문지 Vol.13 No.5

An optimized PWM switching strategy for an induction motor voltage control is developed and demonstrated. Space vector modulation in voltage source inverter offers improved DC-bus utilization and reduced commutation losses and has been therefor recognized the preferred PWM method especially in case of digital implementation. An optimized PWM switching strategy for an induction motor voltage control consists of switching between the two active and one zero voltage vector by using the proposed optimal PWM algorithm. The preferred switching sequence is defined as a function of the modulation index and period of a carrier wave. The sequence is selected by using the inverter switching losses and the current ripple as the criteria. For low and medium power application, the experimental results indicate that good dynamic response and reduced harmonic distortion can be achieved by increasing switching frequency. 유도 전동기를 전압 제어하기 위한 최적 PWM 스위칭 방법을 제시하려한다. 전압 인버터의 공간 벡터 변조 방식은 DC-버스 이용을 향상시키고 정류 손실을 감소시키기 때문에 디지털 구현의 경우 특히 선호하는 PWM 방법이다. 유도 전동기 전압 제어를 위한 최적 PWM 스위칭 방법은 제시한 최적 PWM 알고리즘을 사용하여 두 개의 활성 전압 벡터(active voltage vector)와 하나의 영 전압 벡터(zero voltage vector)로 구성하였다. 선택된 스위칭 순차 열은 변조 지수(modulation index)와 운송파(carrier wave) 주기의 함수로 정의 된다. 순차 열은 인버터 스위칭 손실과 전류 리플 값을 기준으로 사용하여 선택된다. 실험 결과 중 저 전력용으로 사용할 경우 스위칭 주파수를 증가시킴에 따라 고조파 왜곡이 감소하고 동특성이 좋아짐을 확인할 수 있었다.

태양전지용 CdS 박막의 열처리에 따른 전기 및 광학적 특성에 관한 연구

박정철,추순남,Park, Jung-Cheul,Chu, Soon-Nam 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.11

In this paper, CdS thin films well-known to window layer for solar cell were fabricated by means of vacuum evaporation method treated with different substrate heating. During film fabrication the substrates were heated at 50, 75 and $100^{\circ}C$, respectively. The thin films were then annealed at $200^{\circ}C$ in atmosphere, and the electrical and optical properties were investigated. By annealing, the hexagonal structure of films was changed into cubic structure. Their transmissivity was also increased and moved to longer wave band. It was shown that the film fabricated with the substrate heat-treated at $50^{\circ}C$ had the lowest resistivity.

건물 차양을 위한 RF제어 시스템 제작에 관한 연구

박정철,추순남,Park, Jung-Cheul,Chu, Soon-Nam 한국인터넷방송통신학회 2014 한국인터넷방송통신학회 논문지 Vol.14 No.6

This paper is based on the fabrication of wireless control system for the building shading device. RF Module was controlled by UHF wireless CC1020 chip which has low electrical power and low electrical voltage. Also 447.8625~447.9875 frequency, 4800Baud data rate and 12.5 kHz channel spacing was controlled by the use of SPDT switch and with Microcontroller program. Furthermore, the helical antenna was used. The starting production of 447.8625~447.9875 kHz wireless electrical power was used. As the result, it did not exceed 10dBm which is the standard of low power wireless system. Shading efficiency was measured at 25%, 50%, 75% direction with controlling the interior temperature and the intensity of illumination at the rate of 1 hour. As the result, the intensity of illumination was lowered to 82~87% at 25% direction with $0.6{\sim}1.4^{\circ}C$ lowered temperature. At 50% direction, the intensity of illumination was lowered to 60~68% with $2.3{\sim}4.1^{\circ}C$ lowered temperature. And at 75% direction, the intensity of illumination was lowered to 41~47% with $3.4{\sim}5.1^{\circ}C$ lowered temperature. 본 논문은 건물 차양을 위한 RF 제어 시스템 제작에 관한 연구이다. 저전력, 저전압 UHF 무선 송 수신 칩인 CC1020을 사용하여 주파수 447.8625~447.9875, Data rate 4800Baud, Channel spacing 12.5kHz, SPDT 스위치로 입출력 분리하여 설계하여 Microcontroller 프로그램 하였다. 안테나는 나선형 Helical 안테나 형태로 제작하였다. 시작 제품을 주파수 447.8625~447.9875 무선 공중선 전력을 측정하여 실험한 결과 소출력 무선기기 기준인 10dBm을 넘지 않았다. 차양 효과 실험은 차양을 25%, 50%, 75% 위치에서 실내 온도 및 조도를 1시간 단위로 측정하였다. 실험결과 25% 위치시 조도는 82~87%로 낮아지고, 온도는 $0.6{\sim}1.4^{\circ}C$ 낮아졌으며, 50% 위치시 조도는 60~68%로 낮아지고, 온도는 $2.3{\sim}4.1^{\circ}C$ 낮아졌다. 75% 위치시 조도는 41~47% 낮아지고, 온도는 $3.4{\sim}5.1^{\circ}C$가 낮아졌다.