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김희진,위유민,박성규,홍성수,조태식,이상호 조선대학교 구강생물학연구소 2002 口腔生物學硏究 Vol.26 No.2
Dentinogenesis imperfecta is an inherited disorder of dentin formation, usually exhibiting an autosomal dominant mode of transmission. Type Ⅰdentinogenesis imperfects occurs in Patients afflicted with osteogenesis imperfecta. Type Ⅱdentinogenesis imperfecta is not associated with osteogenesis imperfects. Type Ⅲ dentinogenesis imperfecta (Brandywine type) occurs in a racial isolate area in the state of Maryland. Clinically, the color of teeth may range from a gray to brownish violet or yellowish brown with translucent or opalescent hue. The enamel often chips and fractures away, allowing speedy attrition of the remaining, poorly calcified. softer dentin. Roentgenographic features include pulpal obliteration, bulbous crowns and short and blunted roots. The cementum, periodontal membrane and the supporting bone appear normal
오재근,최기영,송재흥,김영국,채건식,주유환,설정식,손인호,차성극,이상찬 慶南大學校 附設 基礎科學硏究所 1996 硏究論文集 Vol.8 No.-
HClO₄(pH:2) 수용액에서 양극산화 방법으로 HgMnTe(HMT)의 표면에 산화막을 형성 시켰다. 산화막의 두께는 SEM으로 측정하였으며 10㎛였다. 전류-전압 특성곡선을 얻어 산화 피크 전압으로부터 HTeO₂?, TeO?, HHgO₂? 막이 형성되었음을 알 수 있었다. 산화시키지 않은 HMT와 HClO₄수용액에서 산화시킨 HMT에 대해 Hall전압 및 자기저항을 각각 측정하였다. 홀전압과 자기저항은 HMT보다 HMT산화막에서 더 컸으며 이것은 HHgO₂? 공격자가 홀의 역할을 하고, TeO₄? 산화막은 전하의 포획도를 낮게하기 때문으로 생각할 수 있다. Anodic oxidation processes on HgMnTe surface has been studied in standard aqueous HClO₄(pH:2) solution. The 10㎛ thickness of the anodic oxide layers was measured by SEM. The Composition of the anodic oxide layers are evaluated from current-voltage(I-V) characteristic of HgMnTe Oxidation. The layers are composed of mixed oxide. ??, TeO₄, and?? in HClO₄solution. Transport properties have been investigated in HMT oxide layer made in HClO₄solution and virgin HMT samples at 300K. Hall voltage and magnetoresistance are greater in oxide layer HMT than virgin HMT. As a result, we know that the vacancy of ??in an anodic oxide layer acts as hole and the resulting oxide ?? layer exhibit a reduced degree of charge trapping and increase magnetoresistance.
You, Seong-sik The Korean Society Of SemiconductorDisplay Technol 2017 반도체디스플레이기술학회지 Vol.16 No.1
The result of stripping process for the removal of the post etch/ash Photoresist (PR) residue on an aluminum patterned wafer by using supercritical $CO_2$ ($sc-CO_2$) mixture, was investigated by scanning of electron microscope (SEM) inspection of wafer, measuring the cloud points and visual observation of the state of $sc-CO_2$ mixtures. It was found that $sc-CO_2$ mixtures were made by mixing additives and $sc-CO_2$ should form homogeneous and transparent phase (HTP) in order to effectively and uniformly remove the post etch/ash PR residue on the aluminum patterned wafer using them. The additives were formulated by mixing and co-solvents like an amine compound and fluorosurfactants used as HTP agents, and the PR residue on the wafer were able to be rapidly and effectively removed using the $sc-CO_2$ mixture of HTP. The five kinds of additives were formulated by the recipe of mixing co-solvents and surfactants, which were able to remove PR residue on the wafer by mixing with $sc-CO_2$ at the stripping temperature range from 40 to $80^{\circ}C$. The five kinds of $sc-CO_2$ mixtures which were named as PR removers were made, which were able to form HTP within the above described stripping temperature. The cloud points of $sc-CO_2$ mixtures were measured to find correlation between them and HTP.
You, Seong-sik The Korean Society Of SemiconductorDisplay Technol 2017 반도체디스플레이기술학회지 Vol.16 No.2
The supercritical $CO_2$ (sc-$CO_2$) mixture and the sc-$CO_2$-based Photoresist(PR) stripping(SCPS) process were applied to the removal of the post etch/ash PR residue on aluminum patterned wafers and the results were observed by scanning of electron microscope(SEM). In the case of MDII wafers, the carbonized PR was able to be effectively removed without pre-stripping by oxygen plasma ashing by using sc-$CO_2$ mixture containing the optimum formulated additives at the proper pressure and temperature, and the same result was also able to be obtained in the case of HDII wafer. It was found that the efficiency of SCPS of ion implanted wafer improved as the temperature of SCPS was high, so a very large amount of MEA in the sc-$CO_2$ mixture could be reduced if the temperature could be increased at condition that a process permits, and the ion implanted photoresist(IIP) on the wafer was able to be removed completely without pre-treatment of plasma ashing by using the only 1 step SCPS process. By using SCPS process, PR polymers formed on sidewalls of metal conductive layers such as aluminum films, titanium and titanium nitride films by dry etching and ashing processes were removed effectively with the minimization of the corrosion of the metal conductive layers.
도금 폐수 중 유가 금속 회수를 위한 이온교환섬유의 상용화기술
유성식 ( Seong-sik You ) 한국화학공학회 2017 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.55 No.4
Ag 200 ppm과 총유량 120 l/h의 기준으로 이온 교환 섬유 시스템을 제작하였다. 이 시스템은 이온교환 섬유로서 강염기성인 FIVAN A-6을 이용하였고, 이온교환 섬유의 교환이 용이하고 고정틀이 필요 없도록 고안된 이중관 형 이온교환 섬유조로 구성되어있다. 이 시스템의 이온교환섬유의 Ag에 대한 이온교환 용량은 4.6 meq/g 이었으며, 공정조건별로는 다음과 같은 결과를 얻었다. 흡착공정의 경우 유속의 영향을 확인한 후 40~90 l/h의 범위에서 운전하였으며, pH7~12 범위에서는 Ag의 착이온 형성에 대한 pH의 영향이 없는 것으로 나타났다. 역세공정의 경우 60~120 l/h의 범위에서 Ag 회수율 실험을 수행하였으며, 역세용 화학물질로는 NaOH, NH<sub>4</sub>Cl, NaCl을 이용하여 비교실험을 하였고, 역세 화학물질이 고농도 일수록 탈착시간은 짧아지지만 몰당 탈착 효율은 저하되는 경향이었으므로 탈착시간과 농도의 균형을 잘 맞추어 운전해야 경제적 운전이 될 수 있음을 확인하였다. 강염기성 음이온 섬유인 FIVAN A-6와 이중관형 이온교환 섬유조를 이용하여 Ag 흡착율은 99.5% 이상, 총 Ag회수율은 96% 이상의 결과를 얻을 수 있었으며 상용화 가능함을 확인할 수 있었다. On the basis of 200 ppm of Ag and 120 l/h of feed flow rate, we built a pilot plant of an ion exchange fiber system having an double tube type ion exchange chamber with strong base ion exchange fiber (FIVAN A-6) which was designed to replace fibers easily and to eliminate the need for a fixture. The following results were obtained for the double tube type of ion exchange fiber system with an ion exchange capacity of 4.6 meq/g for Ag. The adsorption process was operated in the range of 40~90 l/h after confirming the effect of the flow rate and, pH did not affect formation of complex ion of Ag in the range of pH 7~12. In the case of backwash process, the recovery rate of Ag was tested in the range of 60~120 l/h and comparative experiments were carried out using NaOH, NH<sub>4</sub>Cl, and NaCl as the chemicals for backwash. Although the desorption time was shortened at higher concentration, the desorption efficiency per mol was lowered. Therefore, it was confirmed that the desorption time and the concentration should be well balanced to operate economically. The desorption pattern of the backwash process is slower than the adsorption process and takes a lot of time. The results showed that the Ag adsorption ratio was 99.5% or more and the Ag recovery ratio was 96% or more, and commercialization was possible.
Seong Hoon Jeong,Nam Young Lee,Se Hyun Kim,In Won Chung,Tak Youn,Ung Gu Kang,Yong Min Ahn,Han Young You,Yong Sik Kim 대한신경정신의학회 2018 PSYCHIATRY INVESTIGATION Vol.15 No.6
Objective Second-generation antipsychotics (SGAs) increase the risk of metabolic syndrome (MetS). Despite the risk of MetS, SGAs may have to be continued with change in some patients. The aim of this study was to trace the evolution of MetS in these patients. Methods Patients with schizophrenia who had been maintained on a fixed SGA regimen for more than a year were followed-up without changing the regimen. Metabolic indicators were evaluated at baseline and at follow-up. Prevalence, incidence and spontaneous normalization rate of MetS were estimated. Risk factors that might have influenced the evolution were scrutinized. Results A total of 151 subjects were included. During the mean observation period of 389.9±162.4 days, the prevalence of MetS was increased from 35.1 to 45.0%. The incidence rate was 29.6%, while the normalization rate was 26.4%, risk factors affecting incidence were age (OR=1.09, 95% CI: 1.03–1.17), baseline continuous values of metabolic syndrome risk scores (cMetS, OR=1.77, 95% CI:1.29–2.55) and baseline body weight (OR=1.06, 95% CI: 1.01–1.13). Normalization was influenced by age (OR=0.74, 95% CI: 0.57–0.89) and baseline body weight (OR=0.85, 95% CI: 0.72–0.95). Conclusion The prevalence of MetS steadily increased with the continuous use of SGAs. However, individual difference was extensive and about a quarter of the patients were able to recover naturally without specific measurements.