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Chromatin interacting factor Os VIL 2 increases biomass and rice grain yield
Yang, Jungil,Cho, Lae‐,Hyeon,Yoon, Jinmi,Yoon, Hyeryung,Wai, Antt Htet,Hong, Woo‐,Jong,Han, Muho,Sakakibara, Hitoshi,Liang, Wanqi,Jung, Ki‐,Hong,Jeon, Jong‐,Seong,Koh, Hee John Wiley and Sons Inc. 2019 Plant biotechnology journal Vol.17 No.1
<P><B>Summary</B></P><P>Grain number is an important agronomic trait. We investigated the roles of chromatin interacting factor <I>Oryza sativa </I>VIN3‐LIKE 2 (OsVIL2), which controls plant biomass and yield in rice. Mutations in <I>OsVIL2</I> led to shorter plants and fewer grains whereas its overexpression (OX) enhanced biomass production and grain numbers when compared with the wild type. RNA‐sequencing analyses revealed that 1958 genes were up‐regulated and 2096 genes were down‐regulated in the region of active division within the first internodes of OX plants. Chromatin immunoprecipitation analysis showed that, among the downregulated genes, OsVIL2 was directly associated with chromatins in the promoter region of <I>CYTOKININ OXIDASE/DEHYDROGENASE2</I> (<I>OsCKX2</I>), a gene responsible for cytokinin degradation. Likewise, active cytokinin levels were increased in the OX plants. We conclude that OsVIL2 improves the production of biomass and grain by suppressing <I>OsCKX2</I> chromatin.</P>
Lee, Yang-Seok,Jeong, Dong-Hoon,Lee, Dong-Yeon,Yi, Jakyung,Ryu, Choong-Hwan,Kim, Song L.,Jeong, Hee J.,Choi, Sang C.,Jin, Ping,Yang, Jungil,Cho, Lae-Hyeon,Choi, Heebak,An, Gynheung Blackwell Publishing Ltd 2010 The Plant journal Vol.63 No.1
<P>Summary</P><P>Plants recognize environmental factors to determine flowering time. <I>CONSTANS</I> (<I>CO</I>) plays a central role in the photoperiod flowering pathway of Arabidopsis, and CO protein stability is modulated by photoreceptors. In rice, <I>Hd1</I>, an ortholog of <I>CO</I>, acts as a flowering promoter, and phytochromes repress <I>Hd1</I> expression. Here, we investigated the functioning of <I>OsCOL4</I>, a member of the <I>CONSTANS-like</I> (<I>COL</I>) family in rice. <I>OsCOL4</I> null mutants flowered early under short or long days. In contrast, <I>OsCOL4</I> activation-tagging mutants (<I>OsCOL4-D</I>) flowered late in either environment. Transcripts of <I>Ehd1</I>, <I>Hd3a</I>, and <I>RFT1</I> were increased in the <I>oscol4</I> mutants, but reduced in the <I>OsCOL4-D</I> mutants. This finding indicates that <I>OsCOL4</I> is a constitutive repressor functioning upstream of <I>Ehd1.</I> By comparison, levels of <I>Hd1</I>, <I>OsID1</I>, <I>OsMADS50</I>, <I>OsMADS51</I>, and <I>OsMADS56</I> transcripts were not significantly changed in <I>oscol4</I> or <I>OsCOL4-D</I>, suggesting that <I>OsCOL4</I> functions independently from previously reported flowering pathways. In <I>osphyB</I> mutants, <I>OsCOL4</I> expression was decreased and <I>osphyB oscol4</I> double mutants flowered at the same time as the <I>osphyB</I> single mutants, indicating <I>OsCOL4</I> functions downstream of <I>OsphyB.</I> We also present evidence for two independent pathways through which OsPhyB controls flowering time. These pathways are: (i) night break-sensitive, which does not need <I>OsCOL4</I>; and (ii) night break-insensitive, in which <I>OsCOL4</I> functions between <I>OsphyB</I> and <I>Ehd1.</I></P>
CFD 기법을 통한 지게차 엔진 룸 내 유동 특성 평가
양지혜(Jihae Yang),김낙인(Nag-In Kim),김정일(Jungill Kim),조장형(Janghyung Cho) 한국자동차공학회 2005 한국자동차공학회 춘 추계 학술대회 논문집 Vol.2005 No.5_1
In this paper, the procedure and methodology of the engine room cooling performance analysis for a forklift truck are presented using a CFD(Computation Fluid Dynamics) technique. The mesh generation of the CFD modeling of the engine room was a time consumed and difficult work for a CFD engineer to obtain the reasonable analysis results. Special exclusive codes were investigated to reduce the simulation time and obtain accurate results for the engine room heat analysis. In addition, the well-defined boundary condition in the CFD model and the accurate experimental data of a fan and radiator were also important factors to obtain a good simulation result closed to measure value. To verify the proposed procedure and methodology, the radiator inlet coolant temperature was compared with the simulation and experiment results. It shows that the proposed simulation method and modeling techniques are effective one for the cooler system design of a forklift engine room.
조동규,우상현,Jungil Yang,Dong-HeeLee,임유성,Daekuk Kim,Sungmin Park,이문석 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.4
In this work, we investigated the enhanced performance of IZO-based TFTs with HfSiOx gate insulators. Four types of HfSiOx gate insulators with different deposition powers were deposited by co-sputtering HfO2and Si. To simplify the processing sequences, all of the layers of the TFTs were deposited by an RF-magnetron sputtering method using patterned shadow-masks without any intentional heating of the substrate or subsequent thermal annealing. The four different HfSiOx structural properties were investigated by x-ray Diffraction (XRD),Atomic Force Microscopy (AFM), and the electrical characteristics were also analyzed. There were some noticeable differences depending on the composition of the HfO2 and Si combination. The TFT based on the HfSiOx gate insulator comprised of HfO2 (100 W)-Si (100 W) showed the best results with a field effect mobility of 2.0 cm2/V·s, a threshold voltage of 0.6 V, an Ion/off ratio of 3.18 × 105, and an insulator surface roughness of 0.16 nm RMS. This confirms that the composition of the HfO2 and Si is an important factor in an HfSiOx insulator. In addition, the effective bonding of the HfO2 and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator
Co-sputtered HfO₂-Al₂O₃을 게이트 절연막으로 적용한 IZO 기반 Oxide-TFT 소자의 성능 향상
손희근(Heegeon Son),양정일(Jungil Yang),조동규(Dongkyu Cho),우상현(Sanghyun Woo),이동희(Donghee Lee),이문석(Moonsuk Yi) 大韓電子工學會 2011 電子工學會論文誌-SD (Semiconductor and devices) Vol.48 No.6
투명 산화물 반도체 (Transparent Oxide-TFT)를 활성층과 소스/드레인, 게이트 전극층으로 동시에 사용한 비결정 indium zinc oxide (a-IZO), 절연층으로 co-sputtered HfO₂-Al₂O₃ (HfAlO)을 적용하여 실온에서 RF-magnetron 스퍼터 공정에 의해 제작하였다. TFT의 게이트 절연막으로써 HfO₂ 는 그 높은 유전상수 ( >20)에도 불구하고 미세결정구조와 작은 에너지 밴드갭 (5.31eV) 으로 부터 기인한 거친 계면특성, 높은 누설전류의 단점을 가지고 있다. 본 연구에서는, 어떠한 추가적인 열처리 공정 없이 co-sputtering에 의해 HfO₂와 Al₂O₃를 동시에 증착함으로써 구조적, 전기적 특성이 TFT 의 절연막으로 더욱 적합하게 향상되어진 HfO₂ 박막의 변화를 x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer(SE)를 통해 분석하였다. XRD 분석은 기존 HfO₂ 의 미세결정 구조가 Al₂O₃와의 co-sputter에 의해 비결정 구조로 변한 것을 확인 시켜 주었고, AFM 분석을 통해 HfO₂ 의 표면 거칠기를 비교할 수 있는 RMS 값이 2.979 ㎚ 인 것에 반해 HfAlO의 경우 0.490 ㎚로 향상된 것을 확인하였다. 또한 SE 분석을 통해 HfO₂ 의 에너지 밴드 갭 5.17 eV 이 HfAlO 의 에너지 밴드 갭 5.42 eV 로 향상 되어진 것을 알 수 있었다. 자유 전자 농도와 그에 따른 비저항도를 적절하게 조절한 활성층/전극층 으로써의 IZO 물질과 게이트 절연층으로써 co-sputtered HfAlO를 적용하여 제작한 Oxide-TFT 의 전기적 특성은 이동도 10㎠/V·s 이상, 문턱전압 2 V 이하, 전류점멸비 10? 이상, 최대 전류량 2 ㎃ 이상을 보여주었다. A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered HfO₂-Al₂O₃ (HfAlO) as gate dielectric. In spite of its high dielectric constant ( >20), HfO₂ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of Al₂O₃ into HfO₂ was obtained by co-sputtering of HfO₂ and Al₂O₃ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of HfO₂ were transformed to amorphous structures of HfAlO. By AFM analysis, HfAlO films (0.490㎚) were considerably smoother than HfO₂ films (2.979㎚) due to their amorphous structure. The energy band gap (Eg) deduced by spectroscopic ellipsometer was increased from 5.17eV (HfO₂) to 5.42eV (HfAlO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAlO dielectric material, exhibited a field effect mobility of more than 10㎠/V·s, a threshold voltage of ~2 V, an Ion/off ratio of >10?, and a max on-current of >2 ㎃.
( Sung Ryul Kim ),( Jungil Yang ),( Gynheung An ),( Kshirod K Jena ) 한국육종학회 2016 Plant Breeding and Biotechnology Vol.4 No.1
Preparation of DNA is cumbersome especially in the case of large numbers of plant samples. Several simple plant DNA preparation methods have been developed for use in conjunction with polymerase chain reaction (PCR) analysis. However, those methods have not been adopted widely for rice molecular analysis. We present a new, simple, and inexpensive method using tris-phosphate (TPE) ethylenediaminetetraacetic acid (EDTA) buffer (100 mM tris-HCl pH9.5, 1 M KCl, 10 mM EDTA pH 8.0) without phenol-chloroform extraction and DNA precipitation steps. The method consists of five steps: leaf tissue grinding, incubating in TPE buffer at 65oC for 20 to 90 minutes, diluting extracts with water, centrifuging to sediment tissue debris, and transferring the supernatant for direct use in PCR or storage. Agarose gel analysis of the crude extracts indicated that the method produced intact genomic DNA (gDNA) from young and old leaves of both young seedlings and mature plants. Leaf sample size (0.5 to 8.0 cm long) for DNA preparation was less sensitive to PCR than the previous methods. DNA quality was tested through PCR amplification of various GC content regions and product sizes, and we obtained bands from all samples, indicating that the method produced suitable DNA quality for PCR. gDNAs were stable for longer than eight months at 4oC. This protocol enabled one person to handle several hundred samples in a day and was tested through various PCR-gel analyses such as genotyping of rice T-DNA mutant lines, positional cloning of rice mutant, and high throughput marker-assisted breeding using allele-specific SNP/Indel markers.
Chromatin Interacting Factor OsVIL2 Is Required for Outgrowth of Axillary Buds in Rice
Yoon, Jinmi,Cho, Lae-Hyeon,Lee, Sichul,Pasriga, Richa,Tun, Win,Yang, Jungil,Yoon, Hyeryung,Jeong, Hee Joong,Jeon, Jong-Seong,An, Gynheung Korean Society for Molecular and Cellular Biology 2019 Molecules and cells Vol.42 No.12
Shoot branching is an essential agronomic trait that impacts on plant architecture and yield. Shoot branching is determined by two independent steps: axillary meristem formation and axillary bud outgrowth. Although several genes and regulatory mechanism have been studied with respect to shoot branching, the roles of chromatin-remodeling factors in the developmental process have not been reported in rice. We previously identified a chromatin-remodeling factor OsVIL2 that controls the trimethylation of histone H3 lysine 27 (H3K27me3) at target genes. In this study, we report that loss-of-function mutants in OsVIL2 showed a phenotype of reduced tiller number in rice. The reduction was due to a defect in axillary bud (tiller) outgrowth rather than axillary meristem initiation. Analysis of the expression patterns of the tiller-related genes revealed that expression of OsTB1, which is a negative regulator of bud outgrowth, was increased in osvil2 mutants. Chromatin immunoprecipitation assays showed that OsVIL2 binds to the promoter region of OsTB1 chromatin in wild-type rice, but the binding was not observed in osvil2 mutants. Tiller number of double mutant osvil2 ostb1 was similar to that of ostb1, suggesting that osvil2 is epistatic to ostb1. These observations indicate that OsVIL2 suppresses OsTB1 expression by chromatin modification, thereby inducing bud outgrowth.