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자궁경부암 병기판정 기초검사시 새로운 보조방법으로서 고주파 질식 초음파의 가치
유희석,이은주,장기홍,권혁찬,양정인,김행수,오기석 아주대학교 의과학연구소 1996 아주의학 Vol.1 No.1
To investigate the efficacy of endoluminal ultrasound system (EUS) as a surrogate for high frequency transvaginal ultrasonography and as an optional baseline study in determining parameirial and stromal invasion of early stage cervical cancer, 52 women suspected of cervical cancer underwent EUS. A 12 MHz endoscopic probe was employed to radially scan the cervix for possible lesions suspected to be invasive cancer during a period of 6 months from Feb. 1 to July 1, 1995. Patients also underwent magnetic resonance imaging (MRI) and/or computerized tomography (CT) as a routine mode of baseline study, and were clinically staged by 3 independent physicians specializing in Obstetrics and Gynecology at the Department of Obstetrics and Gynecology, School of Medicine, Ajou University, Suwon, Korea. Thirty one patients subsequently received surgery appropriate for the stage of the disease and the final pathology findings were compared with the results of clinical staging, EUS, MRI/CT by regression analysis. The results showed that there was statistically significant correlation between MRI/CT and pathology (r=0.660, p<0.02), between EUS and pathology (r=0.803, p<0.01), and between clinical staging and pathology (r=0.825, p<0.01). It is concluded that there was significant statistical correlation t>etween EUS, MRI/CT, clinical staging and pathology, but the question remained as to the statistical superiority of EUS over MRI/CT with regard to parametrial invasion and stromal invasion depth assessment. Finally, EUS is useful as an alternative optional diagnostic tool in the baseline study of cervical cancer.
Clinical Outcomes of Obese Recipients (BMI≥30) in Living Donor Liver Transplantation
( Chan Woo Cho ),( Ji Soo Lee ),( Gyu-seong Choi ),( Jong Man Kim ),( Choon Hyuck ),( David Kwon ),( Jae-won Joh ) 대한간학회 2017 춘·추계 학술대회 (KASL) Vol.2017 No.1
Aims: Obese recipients increases difficulty on the aspect of retaining acceptable graft-to-recipient weight ratio (GRWR) in living donor liver transplantation (LDLT). The aim of our study was to assess clinical outcomes of LDLT in obese recipients (BMI≥30) and find acceptable criteria in terms of small for size graft (SFSG). Methods: We performed a retrospective study to validate LT outcomes of obese recipients who were defined as body mass index (BMI) ≥30 and who underwent LDLT from January 2001 to December 2015 at a single institute. Based on GRWR, obese recipients were divided into Group 1 (GRWR ≤ 0.8) and Group 2 (GRWR > 0.8), and assessed posttransplant study parameters included incidence of early allograft dysfunction, primary nonfunction, and hospital mortality. Results: 61 patients (5.3%) were obese recipients in the middle of 1131 cases who underwent LDLT during the study period. Group 1 included 30 recipients and Group 2 included 31 recipients. In baseline characteristics, there were no significant difference between 2 Groups except for GRWR (0.73 versus 0.97; p < 0.001). Hospital stay after LDLT did not show significant difference between two groups (29 versus 27 days; p = 0.217). In Group 1, hospital mortality were 2 (6.7%) cases, and cause of death was graft dysfunction caused by SFSG and sepsis by pneumonia. In Group 2, hospital mortality were 4 cases (12.9%); 2 cases of primary nonfunction (PNF), 1 case of aspiration pneumonia, and intraabdominal bleeding. In the Kaplan-Meier analysis for graft survival, 10-year graft survival in Group 1 and 2 was 76 % and 65 %, respectively. Conclusions: LDLT in obese patients represented unfavorable outcomes in terms of postoperative mortality, and graft survival. However, Low graft weight did not impact outcomes after LDLT
Investigation of Low-Frequency Noise Properties in High-Mobility ZnON Thin-Film Transistors
Chan-Yong Jeong,Hee-Joong Kim,Dae-Hwan Kim,Hyun-Suk Kim,Eok Su Kim,Tae Sang Kim,Joon Seok Park,Jong-Baek Seon,Kyoung Seok Son,Sunhee Lee,Seong-Ho Cho,Young Soo Park,Dae Hwan Kim,Hyuck-In Kwon IEEE 2016 IEEE electron device letters Vol.37 No.6
<P>We investigate the low-frequency noise (LFN) properties of amorphous zinc oxynitride (a-ZnON) thin-film transistors (TFTs) exhibiting high field-effect mobilities ranging from 48.5 to 118.9 cm<SUP>2</SUP>/V · s, depending on the gas flow rates during the deposition process. The measured noise power spectral density of the drain current shows that the LFN in a-ZnON TFTs obeys the classical 1/f noise theory, i.e., it is proportional to 1/f <SUP>γ</SUP> with γ~1 in the frequency range from 10 Hz to 1 kHz. The LFN from the a-ZnON TFT is successfully interpreted by the correlated number fluctuation-mobility fluctuation model. The near-interface dielectric trap density (Nτ) and the Coulomb scattering coefficient (α<SUB>S</SUB>) extracted from the measured LFN in a-ZnON TFTs are similar to those from the previously reported values for amorphous indium-gallium-zinc oxide TFTs. The relatively large values of N<SUB>T</SUB> and α<SUB>S</SUB> from the a-ZnON TFTs formed under O<SUB>2</SUB>-rich environment are mainly attributed to the high degree of disorder of the a-ZnON channel layer caused by the energetically broad and high density of subgap tail states.</P>
자연 월경주기와 Clomiphene Citrate 유도주기를이용한 체외수정 및 배아이식술의 의의
권혁찬,임성호 대한산부인과학회 1993 Obstetrics & Gynecology Science Vol.36 No.4
Ovulation induction with various hormonal agents has become a standard component of in vitro fertilization (IVF) cycles to obtain multiple oocytes. Among the advantages of controlled ovarian hyperstimulation are the increased numbers of oocytes and thus embryos that are available for embryo transfer (ET) and the enhanced cycle control that is achievable, especially with the concurrent use of the gonadotropin-releasing hormone analogues(GnRH-a) However, controlled ovarian hyperstimulation increases the cost of the cycle and is associated with decreased endometrial receptivity. In addition, some patients, including those with regular ovulatory cycles, do not respond to ovarian stimulatory drugs. Recent communications have reported successful pregnancies after IVF in unstimulated cycles and clomiphene citrate stimulation cycle, triggered with or without human chorionic gonadotropin(hCG). In this study, our objections is to describe the clinical experience of our center with in vitro fertilization(IVF) in unstimulated cycles and clomiphene stimulated cycles and to provide a comparison to each other. We report our results in 67 patients, 96 cycles spontaneously ovulatory women with predominatly pelvic and tubal factor as their principal cause of infertility, under the age of 40 and no male factor, and 26 patients, 34 cycles clomiphene citrate stimulated ovulatory women with additional ovulatory factor. In the ninty six spontaneously ovulatory cycles, sixty six follicle aspirated cycles(oocyte retrieval rate ; 68.8%) resulted in nine clinical pregnancies(18.4%)and in the thirty four clomiphene citrate stimulated ovulatory cycles, twenty seven follicles aspirated cycles(oocyte retrieval rate ; 79.4%) resulted in three clinical pregnancies(15.8%). There was no statistically significance in pregnancy rate between two groups.
Chan-Yong Jeong,Hee-Joong Kim,Jeong-Hwan Lee,Hyuck-In Kwon 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.2
We experimentally investigate the physical mechanism for asymmetrical degradation in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under simultaneous gate and drain bias stresses. The transfer curves exhibit an asymmetrical negative shift after the application of gate-to-source (VGS) and drain-to-source (VDS) bias stresses of (VGS = 24 V, VDS = 15.9 V) and (VGS = 22 V, VDS = 20 V), but the asymmetrical degradation is more significant after the bias stress (VGS, VDS) of (22 V, 20 V) nevertheless the vertical electric field at the source is higher under the bias stress (VGS, VDS) of (24 V, 15.9 V) than (22 V, 20 V). By using the modified external load resistance method, we extract the source contact resistance (RS) and the voltage drop at RS (VS, drop) in the fabricated a-IGZO TFT under both bias stresses. A significantly higher RS and VS, drop are extracted under the bias stress (VGS, VDS) of (22 V, 20V) than (24 V, 15.9 V), which implies that the high horizontal electric field across the source contact due to the large voltage drop at the reverse biased Schottky junction is the dominant physical mechanism causing the asymmetrical degradation of a-IGZO TFTs under simultaneous gate and drain bias stresses.