佛立佛多顎漠錫마마硏究

孟慧英 漢陽大學校 民族學硏究 2001 民族과文化 Vol.10 No.-

中國滿 : 通古斯民族的節日供俗

孟慧英 한양대학교 민족학연구소 2002 民族과文化 Vol.11 No.-

중국의 만-퉁구스 어족은 만·시버·허저·에벤키·오로촌을 포함한다. 이들 민족의 주기적인 종교 활동은 샤머니즘과 관련된 공통된 특징이 있으며 민족문화의 가장 전통적인 부분의 하나이다. 과거 자체적인 역법(曆法)이 없던 중국의 만-퉁구스 민족들은 따라서 명확한 민족 명절이 없었다. 후에 사회의 발전 과정에서 한족(漢族) 민간의 명절 영향으로 설·정월 보름·단오·추석 등이 핵심적인 명절이 되었다. 이들 민족의 전통적인 주기적 종교제사는 자연환경과 결부된 생산 양식 및 경제 유형을 바탕으로 한다. 즉 계절의 변화와 동식물의 성장과 생활 습관에 따라 독특한 제사 주기가 형성된다. 이는 시대에 따라 그 여건이 바뀌기도 한다. 예를 들어 만족의 전통명절은 봄과 가을의 축제가 전형적인데 현재는 가을 제사가 중요하게 여겨진다. 이는 만족 사회가 농경사회에 적응한 결과이다. 본래 만족은 여진족 시기까지만 해도 수렵이 중시되어 봄사냥에 따른 봄 제사가 더욱 성대하였다. 중국 만-퉁구스 민족의 전통적인 명절·축제 등은 모두 샤먼을 중심으로 집안 혹은 씨족·마을 등을 단위로 진행된다. 그러나 역사의 발전에 따라 전통 활동은 점차 소멸하고 풍속 역시 쇠퇴하였다. 각 민족 전통유산의 보존이 시급한 상황이다.

White organic light-emitting diodes based on benzothiazole derivative

Hui-ying Fu,Xiao-tong Ye,Gao-yu Zhong,Zhi-yang Zhong,Fei Xiao 한국물리학회 2010 Current Applied Physics Vol.10 No.5

This paper describes the white organic light-emitting diodes (WOLEDs) made from a benzothiazole derivative, N-(4-(benzo[d]thiazol-2-yl)phenyl)-N-phenylnaphthalen-1-amine (BPNA). The bright yellowish-white emission was obtained from a non-doped triple-layer device: ITO/NPB (40 nm)/BPNA (50 nm)/Alq3 (40 nm)/LiF/Al. The Commission Internationale de L’Eclairage (CIE) coordinates of the device were (0.24, 0.36) at 10 V. The maximum brightness of the device was 9225 cd/㎡ at 14.4 V. A current efficiency of 3.08 cd/A, a power efficiency of 1.21 lm/W and an external quantum efficiency of 1.18% at a driving current density of 20 mA/㎠ were achieved. WOLED with a DCJTB-doped structure of ITO/TcTa/BPNA/BPNA: DCJTB (0.5%)/BPNA/BCP/Alq3/LiF/Al was fabricated in comparison with the non-doped device. The device emitted bright white light with the CIE coordinates of (0.33, 0.29) at 10 V and a maximum luminance of 7723 cd/㎡ at 14.8 V.

Using the Root Cause Analysis (RCA) to Improve the Safety and Integrity of Patients’ Identification

Ying-Hui Wu,Shih-Chin Chen 한국간호과학회 2009 한국간호과학회 학술대회 Vol.2009 No.10

The Age-Related Orientational Changes of Human Semicircular Canals

Hui-Ying Lyu,Ke-Guang Chen,Dong-Ming Yin,Juan Hong,Lin Yang,Tian-yu Zhang,Peidong Dai 대한이비인후과학회 2016 Clinical and Experimental Otorhinolaryngology Vol.9 No.2

Objectives. Some changes are found in the labyrinth anatomy during postnatal development. Although the spatial orientation of semicircular canals was thought to be stable after birth, we investigated the age-related orientational changes of human semicircular canals during development. Methods. We retrospectively studied the computed tomography (CT) images of both ears of 76 subjects ranged from 1 to 70 years old. They were divided into 4 groups: group A (1–6 years), group B (7–12 years), group C (13–18 years), and group D (>18 years). The anatomical landmarks of the inner ear structures were determined from CT images. Their coordinates were imported into MATLAB software for calculating the semicircular canals orientation, angles between semicircular canal planes and the jugular bulb (JB) position. Differences between age groups were analyzed using multivariate statistics. Relationships between variables were analyzed using Pearson analysis. Results. The angle between the anterior semicircular canal plane and the coronal plane, and the angle between the horizontal semicircular canal plane and the coronal plane were smaller in group D than those in group A (P<0.05). The JB position, especially the anteroposterior position of right JB, correlated to the semicircular canals orientation (P<0.05). However, no statistically significant differences in the angles between ipsilateral canal planes among different age groups were found. Conclusion. The semicircular canals had tendencies to tilt anteriorly simultaneously as a whole with age. The JB position correlated to the spatial arrangement of semicircular canals, especially the right JB. Our calculation method helps detect developmental and pathological changes in vestibular anatomy.

Research Articles : GIS-based Meteorological Data Processing Technology for Forest Fire Danger Rating Forecast System of China

Ying Hui Zhao,Zhen Zhen,Feng Ri Li 한국임학회 2010 한국산림과학회지 Vol.99 No.2

Spinal Dural Arteriovenous Fistula: Imaging Features and Its Mimics

Ying Jeng,David Yen-Ting Chen,Hui-Ling Hsu,Yen-Lin Huang,Chi-Jen Chen,Ying-Chi Tseng 대한영상의학회 2015 Korean Journal of Radiology Vol.16 No.5

Spinal dural arteriovenous fistula (SDAVF) is the most common spinal vascular malformation, however it is still rare and underdiagnosed. Magnetic resonance imaging findings such as spinal cord edema and dilated and tortuous perimedullary veins play a pivotal role in the confirmation of the diagnosis. However, spinal angiography remains the gold standard in the diagnosis of SDAVF. Classic angiographic findings of SDAVF are early filling of radicular veins, delayed venous return, and an extensive network of dilated perimedullary venous plexus. A series of angiograms of SDAVF at different locations along the spinal column, and mimics of serpentine perimedullary venous plexus on MR images, are demonstrated. Thorough knowledge of SDAVF aids correct diagnosis and prevents irreversible complications.

Impact of the Silicon-nitride Passivation Film Thickness on the Characteristics of InAlAs/InGaAs InP-based HEMTs

Ying-Hui Zhong,Jie Yang,Xin-Jian Li,Peng Ding,Zhi Jin 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.6

In this research, the DC and RF characteristics for our own InAlAs/InGaAs InP-based highelectron-mobility transistors (HEMTs) with 0-nm, 50-nm, and 200-nm silicon-nitride (Si3N4) passivationfilms have been investigated comprehensively and systematically. With increasing Si3N4passivation film thickness, the device exhibits an apparent improvement in the output conductanceand a distinct drift of the pinch-off voltage toward a positive value. Especially, the device passivatedby using a 50-nm Si3N4 film demonstrates the highest extrinsic transconductance and channelcurrent. The appeared changes of the DC properties can be interpreted as due to the passivationinducedpositively-charged surface state increasing the sheet carrier density with the carrier mobilityand parasitic resistance of device being deteriorated by long-time high-stress-intensity ion bombardment. Additionally, the degradations of the current-gain cutoff frequency (fT ) and maximumoscillation frequency (fmax) can be attributed to the drastically-increased parasitic capacitance andresistance induced by the passivation process. This work will be of great importance in fabricatingInP HEMTs with high performances.

Prevalence, Risk Factors, and Psychological Effects of Primary Nocturnal Enuresis in Chinese Young Adults

Hui Jie Hu,Zhen Wei Zhang,Yu Liang,Yan Yan Luo,Qi Feng Dou,Cui Ping Song,Hui Min Zhang,Ying Zhao,Guang Run Tian,Ke Zhang,Qiu Fang Mao,Jing Gui Song,Soren Rittig,Jian Guo Wen 대한배뇨장애요실금학회 2021 International Neurourology Journal Vol.25 No.1

Purpose: This study aimed to investigate the prevalence, risk factors, and effects of primary nocturnal enuresis (PNE) on physical and mental health in young adults in mainland China. Methods: An anonymous questionnaire was used to collect information including the sociodemographic characteristics, history of PNE, family history, daytime voiding symptoms, Pittsburgh Sleep Quality Index (PSQI) scores, Self-Esteem Scale (SES), and Self-Rating Depression Scale (SDS). A total of 22,500 university students from 23 provinces and 368 cities in mainland China were included. Results: In total, 21,082 questionnaires were collected, and 20,345 of them qualified for statistical analysis. The PNE prevalence was 1.17%, and the distribution of monosymptomatic nocturnal enuresis (MNE) and nonmonosymptomatic nocturnal enuresis (NMNE) was 66.1% and 33.9%, respectively. In total, 28% of respondents with PNE reported bedwetting daily, 31.6% between 1 and 7 times weekly, and 40.4% between 1 and 4 times monthly; 80% of PNE cases had no history of treatment. The prevalence of PNE in patients with a family history, frequency, urgency, urinary incontinence, and recurrent urinary tract infections was significantly higher than in those without these conditions (P<0.001). PNE was significantly correlated with the PSQI total score (sleep quality) (P=0.011). The SES score was lower and the SDS was higher (P<0.001) in the PNE group than in those without PNE. Conclusions: In mainland China, the PNE prevalence among young adults was found to be high, and PNE had significant effects on physical and mental health. Risk factors included a family history, daytime voiding symptoms, and lack of treatment.

ECONOMIC GROWTH AND TRANSITION: A STOCHASTIC TECHNOLOGICAL DIFFUSION MODEL

HUI-YING SNG,SHAHIDUR RAHMAN,WAI-MUN CHIA 중앙대학교 경제연구소 2009 Journal of Economic Development Vol.34 No.2

This paper constructs a stochastic growth model that anchors on technology diffusion and improvement in social infrastructure to explain the growth of developing countries. The model is based on the technological diffusion model by Barro and Sala-i-Martin (1997) with two significant extensions: the (productivity) parameter in the model which represents social infrastructure is being endogenized and probability of adverse shocks is being incorporated. The stochastic technological diffusion model is able to explain the various economic growth and transition phases of developing economies. Technology diffusion is modeled as the determinant of conditional convergence, while technological progress and economic openness further strengthen the social infrastructure bringing about absolute convergence. The model is also able to explain why some developing economies experience economic take-off while others do not.