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Retention Model of NAND-type Nitride-Based Charge Trapping Flash Memory
Doo-Hyun Kim,Gil Sung Lee,Jung Hoon Lee,Il Han Park,Seong-Jae Cho,Jang-Gn Yun,Dong Hua Li,Yoon Kim,Byung-Gook Park 대한전자공학회 2008 ICEIC:International Conference on Electronics, Inf Vol.1 No.1
This paper presents a detailed study of the retention characteristics in scaled SONOS charge trapping flash memories. By calculating the oxide field and tunneling currents, we evaluated charge retention characteristics. We calculated transient retention dynamics with the ONO fields, trapped charge, and tunneling currents. All the parameters were obtained by physics-based equations and without any fitting parameters or optimization steps. The results can be used with nano-scale nonvolatile memory in deciding scaling down limits. This modeling accounts for the VT shift as a function of quantity of trapped charge, time, and thickness of silicon oxide and silicon nitride layers, and can be used for optimizing the ONO geometry and parameters for maximum performance.
Preventive Role of Parents in Adolescent Problematic Internet Game Use in Korea
Doo Hwan Kim,Eui Jun Jeong,Hua Zhong 한국사회학회 2010 韓國社會學 Vol.44 No.6
The literature on problematic Internet game use by adolescents most often considered socialrelational factors primarily as a consequence of the addictive Internet game use. Using survey data from 593 Korean students and their parents: 295 in senior secondary school (aged 15-18) and 298 in junior secondary school (aged 12-15), of whom 315 (53.1%) were male, the authors investigated the preventive role of parent-adolescent relations in Internet game addiction. Results showed that adolescents with more adolescent-parent social activities and parentadolescent view alignment regarding games were less likely to develop problematic Internet game use. The findings suggest that parents make efforts to know the latest about their adolescents’ social currency and entertainment activities (i.e. Internet game). Also parents need to increase the variety and frequency of activities they can share with their adolescents in order to attempt to block negative effects of excessive Internet games, to prevent dependency, and to channel game playing in a positive direction.
Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories
Kim, Doo-Hyun,Cho, Seongjae,Li, Dong Hua,Yun, Jang-Gn,Lee, Jung Hoon,Lee, Gil Sung,Kim, Yoon,Shim, Won Bo,Park, Se Hwan,Kim, Wandong,Shin, Hyungcheol,Park, Byung-Gook IOP Publishing 2010 Japanese journal of applied physics Vol.49 No.r8
Fabrication Process of Cone SONOS Memory Structure
Gil Sung Lee,Doo Hyun Kim,Il Han Park,Jung Hoon Lee,Seongjae Cho,Jang-Gn Yun,Dong Hua Li,Yoon Kim,Se Hwan Park,Won Bo Shim,Jong Duk Lee,Byung-Gook Park 대한전자공학회 2008 ICEIC:International Conference on Electronics, Inf Vol.1 No.1
The cone SONOS memory device is a vertical device and has a merit of electric field concentration at the channel region near the drain. The key point of the device is excellent program/erase characteristic induced by electric field concentration in the channel region near the drain and electric field reduction in the blocking oxide. There are three important unit processes, patterning cone shape, overlapped gate formation, and drain contact. In this paper, we focus on the fabrication process of the structure.