Hydrothermally synthesized ternary heterostructured MoS₂/Al₂O₃/g-C₃N₄ photocatalyst

Vattikuti, S.V. Prabhakar,Byon, Chan Elsevier 2017 Materials research bulletin Vol.96 No.3

<P><B>Abstract</B></P> <P>A multifaceted ternary MoS<SUB>2</SUB>/Al<SUB>2</SUB>O<SUB>3</SUB>/g-C<SUB>3</SUB>N<SUB>4</SUB> nanocomposite was prepared from a simple and facile hydrothermal method, which has good photocatalytic performance for the degradation of crystal violet (CV) dye under visible light irradiation. As a result of wide structural features for the charge separation mechanism, the formation of a ternary heterojunction affects the photocatalytic activity of the MoS<SUB>2</SUB>/Al<SUB>2</SUB>O<SUB>3</SUB>/g-C<SUB>3</SUB>N<SUB>4</SUB> nanocomposite remarkably. The photocatalytic activity of ternary nanocomposite was approximately 10.28 and 1.65 times higher than that of pure g-C<SUB>3</SUB>N<SUB>4</SUB> and 20Al-gCN, respectively. More significantly, the ternary nanocomposite also showed good photostability and reusability. The enhanced visible light photocatalytic activity was attributed to the effective photocatalytic mechanism of charge separation of the ternary system, whereas the surface properties were key factors for photodegradation of the CV dye.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Surfactant-free synthetic method for synthesis of MoS<SUB>2</SUB>/Al<SUB>2</SUB>O<SUB>3</SUB>/g-C<SUB>3</SUB>N<SUB>4</SUB> was proposed. </LI> <LI> The optimized synthetic conditions for MoS<SUB>2</SUB>/Al<SUB>2</SUB>O<SUB>3</SUB>/g-C<SUB>3</SUB>N<SUB>4</SUB> nanocomposites were also investigated. </LI> <LI> Possible growth mechanism of the MoS<SUB>2</SUB>/Al<SUB>2</SUB>O<SUB>3</SUB>/g-C<SUB>3</SUB>N<SUB>4</SUB> heterostructure is also reported. </LI> <LI> 2Mo-Al-gCN sample revealed higher specific surface area with formation of mesoporous structure. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>

Subsolidus phase relationships in the Al₂O₃–SnO₂–ZnO ternary system at 1200 °C in air

Sharma, Abhishek,Yoo, Sang-Im Elsevier 2018 Journal of alloys and compounds Vol.740 No.-

<P><B>Abstract</B></P> <P>We report the subsolidus phase relationships in the Al<SUB>2</SUB>O<SUB>3</SUB>–SnO<SUB>2</SUB>–ZnO ternary system at 1200 °C in air. The phases and lattice parameters of samples were analyzed by powder X-ray diffraction (XRD). Only one type of solid solutions was found in this ternary system, which is Al-substituted zinc stannate spinel ternary compounds of Zn<SUB>2-x</SUB>Sn<SUB>1-x</SUB>Al<SUB>2x</SUB>O<SUB>4</SUB>-type solid solutions with the solubility limit of x ≈ 0.045 at 1200 °C in air. In comparison with In<SUB>2</SUB>O<SUB>3</SUB>–SnO<SUB>2</SUB>–ZnO and Ga<SUB>2</SUB>O<SUB>3</SUB>–SnO<SUB>2</SUB>–ZnO ternary systems previously reported, the solubility limit of Al<SUP>3+</SUP> (≈4.5 mol %) in the Zn<SUB>2-x</SUB>Sn<SUB>1-x</SUB>Al<SUB>2x</SUB>O<SUB>4</SUB>-type solid solution is much smaller than those of In<SUP>3+</SUP> and Ga<SUP>3+</SUP> in Zn<SUB>2</SUB>SnO<SUB>4</SUB> for the substitution of the Sn<SUP>4+</SUP> site, where In<SUP>3+</SUP> and Ga<SUP>3+</SUP> solubility limits are 90 and 100 mol % at 1275 °C and 1250 °C, respectively, in air. In addition, unlike previous report, no solid solution was found to exist more than 0.5 mol% of Zn<SUP>2+</SUP> in Al<SUB>2</SUB>O<SUB>3</SUB> at 1200 °C in air. On the basis of our experimental data, we were able to construct the subsolidus phase diagram of the Al<SUB>2</SUB>O<SUB>3</SUB>–SnO<SUB>2</SUB>–ZnO ternary system at 1200 °C in air.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Phase relations in Al<SUB>2</SUB>O<SUB>3</SUB>–SnO<SUB>2</SUB>–ZnO system are reported first time at 1200 °C in air. </LI> <LI> Solubility limit of Al in Zn<SUB>2-x</SUB>Sn<SUB>1-x</SUB>Al<SUB>2x</SUB>O<SUB>4</SUB>-type solid solutions was 2x ≈ 0.045. </LI> <LI> Reason for a limited solubility of Al, w.r.t. In and Ga in Zn<SUB>2</SUB>SnO<SUB>4</SUB> was described. </LI> <LI> Solid solubilities in the Al<SUB>2</SUB>O<SUB>3</SUB>–ZnO binary system were carefully investigated. </LI> <LI> Al<SUB>2-y</SUB>Zn<SUB>y</SUB>O<SUB>4</SUB>-type solid solutions were undetectable down to y = 0.005. </LI> </UL> </P>

CNTFET Based Ternary 1-Trit & 2-Trit Comparators for Low Power High-Performance Applications

Suman Rani,Balwinder Singh,Rekha Devi 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.6

1-Trit and 2-Trit Ternary comparator circuits using Complementary Metal–Oxide–Semiconductor (CMOS) as well as Carbon Nanotube Field-Effect Transistor (CNTFET) is proposed and investigated for Low Power High-performance applications. The design and simulation are investigated and authenticated using Hailey Simulation Program with Integrated Circuit (HSPICE) with Predictive technology model (PTM) low power 32 nm metal gate/High-K/Strained-Si Model for CMOS and 32 nm Stanford Model for CNTFET. The CNTFET based design is compared with the CMOS design in terms of signifi cant design aspects, specifically delay, Average Power consumption and Power delay product (PDP). A comparison is performed among CMOS and CNTFET based ternary comparator circuits which reveals that CNTFETs can lead to more efficient ternary circuits. In terms of delay and power consumption, the CNTFET based 1-Trit Ternary Comparator performs better than the CMOS based 1-Trit Ternary Comparator as the delay and Average power consumption are reduced by 89.7% and 57.3% in CNTFET type as compared to the CMOS based 1-Trit Ternary Comparator design. Similarly, in the case of the 2-Trit comparator, the CNTFET based design performs better than the CMOS-based design as the delay and Average power consumption are reduced by 88.7% and 42% in the CNTFET type.

Electrodeposition of Ternary CdZnS Semiconductor Thin Films Using a S-Modified Polycrystalline Au Electrode

팽기정,함선영,조세진,이웅기,전소현,신지철,명노승 한국전기화학회 2007 한국전기화학회지 Vol.10 No.4

ectrochemical deposition of CdZnS thin films on thepolycrystaline Au electrode. Initialy, an Au substrate is electrochemically modified with a sulfur layer. In the secondstep, the layer is electroreduced to S2- in the electrolyte dosed with the requisite amount of Cd2+ and Zn2+ ions togenerate CdZnS films in situ. This approach was validated using a combination of linear sweep voltametry andelectrochemical quartz crystal microgravimetry. Thus synthesized CdZnS thin films have diferent composition dependingon the composition of electrolytes. CdZnS thin films are characterized by energy-dispersive X-ray analysis and Ramanspectroscopy.

Electrodeposition of Ternary CdZnS Semiconductor Thin Films Using a S-Modified Polycrystalline Au Electrode

Ham, Sun-Young,Cho, Se-Jin,Lee, Ung-Ki,Jeon, So-Yeon,Shin, Ji-Cheol,Myung, No-Seung,Paeng, Ki-Jung The Korean Electrochemical Society 2007 한국전기화학회지 Vol.10 No.4

This paper describes a two-step approach for the electrochemical deposition of CdZnS thin films on the polycrystalline Au electrode. Initially, an Au substrate is electrochemically modified with a sulfur layer. In the second step, the layer is electroreduced to $S^{2-}$ in the electrolyte dosed with the requisite amount of $Cd^{2+}$ and $Zn^{2+}$ ions to generate CdZnS films in situ. This approach was validated using a combination of linear sweep voltammetry and electrochemical quartz crystal microgravimetry. Thus synthesized CdZnS thin films have different composition depending on the composition of electrolytes. CdZnS thin films are characterized by energy-dispersive X-ray analysis and Raman spectroscopy.

Ternary Blend of Organic Semiconductors with High Photoelectric Properties and Stability in both Indoor and Outdoor Conditions

Chi-hyeong Lee,Minwoo Nam,Doo-Hyun Ko 한국진공학회 2020 한국진공학회 학술발표회초록집 Vol.2020 No.2

Investigation of the Structural and the Electronic Properties of AgGaX2(X = S, Se, Te) Nanolayers in the [112] Direction by using Density Functional Theory

Gordanian E.,Salehi H. 한국물리학회 2020 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.76 No.10

The structural and electronic properties of AgGaX2(X = S, Se, Te) nanolayers were studied by using a full potential linear augmented plane wave (FP-LAPW) based on density functional theory. To investigate the structural and electronic properties of nanolayers, the generalized gradient approximation of Perdew, Becke and Ernzerhof (GGA-PBE) and modified Becke-Johnson (MBJ) exchange potential were used, respectively. The studied nanolayers were confined in an orthorombic supercell and simulated in the [112] direction, and the effects of dangling bonds and the nanolayer thickness on the electronic and structural properties were explored. Also, the cohesive energy was calculated to investigate the nanolayers stability of AgGaX2(X = S, Se, Te) and the total and the partial densities of states were plotted to consider the electronic properties. The nanolayers were semiconductors, which is in good agreement with the experimental results. Moreover, the effects of surface and center atoms on the electronic properties were considered, as were the effects of dangling bonds and nanolayer thickness on the band gap energy.

Photoelectrochemical Deposition of CdZnSe Thin Films on the Se-Modified Au Electrode

Ham, Sun-Young,Jeon, So-Yeon,Lee, Ungki,Paeng, Ki-Jung,Myung, No-Seung Korean Chemical Society 2008 Bulletin of the Korean Chemical Society Vol.29 No.5

Photoelectrochemical deposition of CdZnSe thin films on the Se-modified Au electrode using electrochemical quartz crystal microgravimetry (EQCM) and voltammetry is described. Corrosion of pre-deposited Se electrodes by illumination at a fixed potential resulted in $Se^{2-}$ species, which was manifest from the EQCM frequency changes. $Se^{2-}$ species generated from the photocorrosion reacted with $Cd^{2+}$ and $Zn^{2+}$ ions in the electrolyte to form CdZnSe films on the Au electrode. The effect of electrolyte composition on the composition and band gap of CdZnSe films was studied in detail. Also, photoelectrochemistry, EDX, Raman spectroscopy were used for the characterization of CdZnSe thin films.

Photoelectrochemical Deposition of CdZnSe Thin Films on the Se-Modified Au Electrode

Sunyoung Ham,명노승,이웅기,팽기정,Soyeon Jeon 대한화학회 2008 Bulletin of the Korean Chemical Society Vol.29 No.5

Photoelectrochemical deposition of CdZnSe thin films on the Se-modified Au electrode using electrochemical quartz crystal microgravimetry (EQCM) and voltammetry is described. Corrosion of pre-deposited Se electrodes by illumination at a fixed potential resulted in Se²- species, which was manifest from the EQCM frequency changes. Se²- species generated from the photocorrosion reacted with Cd²+ and Zn²+ ions in the electrolyte to form CdZnSe films on the Au electrode. The effect of electrolyte composition on the composition and band gap of CdZnSe films was studied in detail. Also, photoelectrochemistry, EDX, Raman spectroscopy were used for the characterization of CdZnSe thin films.