단일 패키지의 특성 분석을 통한 고출력 발광 다이오드 모듈의 접합 온도 측정

이세일,김우영,정영기,양종경,박대희,Lee, Se-IL,Kim, Woo-Young,Jeong, Young-Gi,Yang, Jong-Kyung,Park, Dae-Hee 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.12

The temperature of junction in LED affects the life time and performance. however, the measurement of junction temperature in module is very difficult. In this paper, to measure the junction temperature in LED module, optical and electrical properties is measured in single package in temperature from 25 [$^{\circ}C$] to 85 [$^{\circ}C$], and then junction temperature can is estimated in module with measuring the average voltage of single package. As results, the junction temperature of single package is measured the temperature of 61.2 [$^{\circ}C$] in ambient temperature, also, the junction temperature of LED module is measured the temperature of 72.5 [$^{\circ}C$] in ambient temperature.

Analysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing Degree of Trench Etching

Byeong-il Lee,Jong Min Geum,Eun Sik Jung,Ey Goo Kang,Yong-Tae Kim,Man Young Sung 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.3

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance [1]. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don’t have a great effect on temperature change.

Integrated microsensor for precise, real-time measurement of junction temperature of surface-mounted light-emitting diode

Choi, Hyunjin,Choi, Woohyuk,Lim, Jiseok,Choi, Jungwook Elsevier 2019 Sensors and actuators. A Physical Vol.298 No.-

<P><B>Abstract</B></P> <P>Light-emitting diodes (LEDs) are widely used in many industrial applications owing to their high performance and efficiency compared with conventional lighting systems. However, a considerable amount of input power is inevitably dissipated into heat at the LED junction, which can degrade the performance and reliability of the LED; thus, it is important to monitor the change in the junction temperature of the LED. In this study, we present a micro-temperature sensor-integrated surface-mounted device (SMD) for accurate and real-time measurement of the junction temperature of an LED. The LED is mounted on a microfabricated Pt sensor in a similar way to the typical SMD assembly. The heat generated at the LED junction is conductively transferred to the microsensor, increasing the temperature and changing its electrical resistance. In contrast to the conventional techniques for thermal characterization of LEDs, the integrated microsensor provides real-time information on the junction temperature with high precision, reproducibility, and simplicity. Additionally, the temperature of the solder, which is not easily accessible but is closely related to the reliability of the LED, can be estimated by analyzing the thermal resistance of the LED package. Experimental and numerical results indicate a linear correlation (R<SUP>2</SUP> = 0.988) between the junction and sensor temperatures, which is practically useful for the thermal management of the miniaturized SMD-LED.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Methodology for measuring LED junction temperature is proposed. </LI> <LI> Pt micro-temperature sensor-integrated SMD-LED is designed and fabricated for real-time measurement of junction temperature. </LI> <LI> Highly linear correlation of the temperature between the microsensor and the junction is experimentally found. </LI> <LI> Analysis of structure function, thermal resistance, and numerical calculation of SMD-LED validates measurement accuracy of Pt microsensor. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>

Challenges of Junction Temperature Sensing in SiC Power MOSFETs

J. Ortiz Gonzalez,O. Alatise 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5

Junction temperature sensing is an integral part of both on-line and off-line condition monitoring where direct access the bare die surface is not available. Given a defined power input, the junction temperature enables the estimation of the junction-to-case thermal resistance, which is a key indicator of packaging failure mechanisms like solder voiding and cracks. The use of temperature sensitive electrical parameters (TSEPs) has widely been proposed as a means of junction temperature sensing however, in SiC power devices there are certain challenges regarding the use of TSEPs. Bias Temperature Instability (BTI) from charge trapping in the gate dielectric causes threshold voltage drift, which in SiC affects some of the key TSEPs including ON-state resistance, body diode forward voltage as well as the turn-ON current commutation rate. This paper reviews the challenges of junction temperature sensing in SiC power devices, the impact of BTI on TSEPs and how different researchers have approached the issue of power cycling SiC power devices and modules.

Assessment Methodology of Junction Temperature of Light-Emitting Diodes (LEDs)

Chang, Moon-Hwan,Pecht, Michael The Korean Microelectronics and Packaging Society 2016 마이크로전자 및 패키징학회지 Vol.23 No.3

High junction temperature directly or indirectly affects the optical performance and reliability of high power LEDs in many ways. This paper is focused on junction temperature characterization of LEDs. High power LEDs (3W) were tested in temperature steps to reach a thermal equilibrium condition between the chamber and the LEDs. The LEDs were generated by pulsed currents with duty ratios (0.091% and 0.061%) in multiple steps from 0mA and 700mA. The diode forward voltages corresponding to the short pulsed currents were monitored to correlate junction temperatures with the forward voltage responses for calibration measurement. In junction temperature measurement, forward voltage responses at different current levels were used to estimate junction temperatures. Finally junction temperatures in multiple steps of currents were estimated in effectively controlled conditions for designing the reliability of LEDs.

Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si

Mahala, Pramila,Patel, Malkeshkumar,Gupta, Navneet,Kim, Joondong,Lee, Byung Ha North-Holland 2018 Physica. B, Condensed matter Vol.537 No.-

<P><B>Abstract</B></P> <P>Studying the performance limiting parameters of the Schottky device is an urgent issue, which are addressed herein by thermally stable silver nanowire (AgNW) embedded metal oxide/p-Si Schottky device. Temperature and bias dependent junction interfacial properties of AgNW-ITO/Si Schottky photoelectric device are reported. The current−voltage−temperature (<I>I</I>−<I>V</I>−<I>T</I>), capacitance-voltage-temperature (<I>C</I>−<I>V</I>−<I>T</I>) and impedance analysis have been carried out in the high-temperature region. The ideality factor and barrier height of Schottky junction are assessed using <I>I</I>−<I>V</I>−<I>T</I> characteristics and thermionic emission, to reveal the decrease of ideality factor and increase of barrier height by the increasing of temperature. The extracted values of laterally homogeneous Schottky <I>(ϕ</I> <SUB> <I>b</I> </SUB>) and ideality factor (<I>n)</I> are approximately 0.73 eV and 1.58, respectively. Series resistance (R<SUB>s</SUB>) assessed using Cheung's method and found that it decreases with the increase of temperature. A linear response of R<SUB>s</SUB> of AgNW-ITO/Si Schottky junction is observed with respect to change in forward bias, i.e. dR<SUB>S</SUB>/dV from 0 to 0.7 V is in the range of 36.12–36.43 Ω with a rate of 1.44 Ω/V. Impedance spectroscopy is used to study the effect of bias voltage and temperature on intrinsic Schottky properties which are responsible for photoconversion efficiency. These systematic analyses are useful for the AgNWs-embedding Si solar cells or photoelectrochemical cells.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Interfacial properties of AgNWs embedded ITO-p-Si Schottky junction. </LI> <LI> Surface interface of AgNW is demonstrated. </LI> <LI> High temperature characteristics were investigated. </LI> <LI> Impedance analyses were presented for photo-conversion mechanism. </LI> </UL> </P>

Analysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing Degree of Trench Etching

Lee, Byeong-Il,Geum, Jong Min,Jung, Eun Sik,Kang, Ey Goo,Kim, Yong-Tae,Sung, Man Young The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.3

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.

Analysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing Degree of Trench Etching

이병일,금종민,정은식,강이구,김용태,성만영 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.3

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance [1]. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don’t have a great effect on temperature change.

Junction Temperature Prediction of IGBT Power Module Based on BP Neural Network

Wu, Junke,Zhou, Luowei,Du, Xiong,Sun, Pengju The Korean Institute of Electrical Engineers 2014 Journal of Electrical Engineering & Technology Vol.9 No.3

In this paper, the artificial neural network is used to predict the junction temperature of the IGBT power module, by measuring the temperature sensitive electrical parameters (TSEP) of the module. An experiment circuit is built to measure saturation voltage drop and collector current under different temperature. In order to solve the nonlinear problem of TSEP approach as a junction temperature evaluation method, a Back Propagation (BP) neural network prediction model is established by using the Matlab. With the advantages of non-contact, high sensitivity, and without package open, the proposed method is also potentially promising for on-line junction temperature measurement. The Matlab simulation results show that BP neural network gives a more accuracy results, compared with the method of polynomial fitting.

칼만 필터를 활용한 MOSFET 접합부 온도 정밀 추정 알고리즘

이용경,남은택,공임보,채수용 전력전자학회 2024 전력전자학회 논문지 Vol.29 No.2

In this paper, an algorithm that utilizes a low-speed temperature sensor and Kalman filter was introduced to estimate the junction temperature of a power MOSFET in real time. The Kalman filter was designed to estimate the junction and internal layers’ temperatures on the basis of the Cauer thermal model. The calculated power loss and measured ambient temperature of a MOSFET were used as input for the Kalman filter to estimate the junction temperature. The proposed algorithm can effectively estimate variations in junction temperature even in the presence of uncertainties in the thermal model and measurement noise. The effectiveness of the proposed algorithm was evaluated in simulations and hardware experiments by using a synchronous buck DC-DC converter.