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      • Challenges of Junction Temperature Sensing in SiC Power MOSFETs

        J. Ortiz Gonzalez,O. Alatise 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5

        Junction temperature sensing is an integral part of both on-line and off-line condition monitoring where direct access the bare die surface is not available. Given a defined power input, the junction temperature enables the estimation of the junction-to-case thermal resistance, which is a key indicator of packaging failure mechanisms like solder voiding and cracks. The use of temperature sensitive electrical parameters (TSEPs) has widely been proposed as a means of junction temperature sensing however, in SiC power devices there are certain challenges regarding the use of TSEPs. Bias Temperature Instability (BTI) from charge trapping in the gate dielectric causes threshold voltage drift, which in SiC affects some of the key TSEPs including ON-state resistance, body diode forward voltage as well as the turn-ON current commutation rate. This paper reviews the challenges of junction temperature sensing in SiC power devices, the impact of BTI on TSEPs and how different researchers have approached the issue of power cycling SiC power devices and modules.

      • KCI등재

        Effect of Artemisia dracunculus Administration on Glycemic Control, Insulin Sensitivity, and Insulin Secretion in Patients with Impaired Glucose Tolerance

        Miriam Mendez-del Villar,Ana M. Puebla-Perez,Maria J. Sanchez-Pena,Luis J. Gonzalez-Ortiz,Esperanza Martinez-Abundis,Manuel Gonzalez-Ortiz 한국식품영양과학회 2016 Journal of medicinal food Vol.19 No.5

        To evaluate the effect of Artemisia dracunculus on glycemic control, insulin sensitivity, and insulin secretion in patients with impaired glucose tolerance (IGT). A randomized, double blind, placebo-controlled clinical trial was performed in 24 patients with diagnosis of IGT. Before and after the intervention, glucose and insulin levels were measured every 30 min for 2 h after a 75-g dextrose load, along with glycated hemoglobin A1c (A1C) and lipid profile. Twelve patients received A. dracunculus (1000 mg) before breakfast and dinner for 90 days; the remaining 12 patients received placebo. Area under the curve (AUC) of glucose and insulin, total insulin secretion, first phase of insulin secretion, and insulin sensitivity were calculated. Wilcoxon signed-rank, Mann–Whitney U, and chi-square tests were used for statistical analyses. The institutional ethics committee approved the protocol. After A. dracunculus administration, there were significant decreases in systolic blood pressure (SBP; 120.0 ± 11.3 vs. 113.0 ± 11.2 mmHg, P < .05), A1C (5.8 ± 0.3 vs. 5.6% ± 0.4%, P < .05), AUC of insulin (56,136.0 ± 27,426.0 vs. 44,472.0 ± 23,370.0 pmol/L, P < .05), and total insulin secretion (0.45 ± 0.23 vs. 0.35 ± 0.18, P < .05), with a significant increase in high-density lipoprotein cholesterol (HDL-C) (1.3 ± 0.3 vs. 1.4 ± 0.3 mmol/L, P < .05). There were no significant differences after placebo administration. A. dracunculus administration for 90 days in patients with IGT significantly decreased SBP, A1C, AUC of insulin, and total insulin secretion with a significant increase in HDL-C levels.

      • Analysis of Power Device Failure Under Avalanche Mode Conduction

        P. Alexakis,O. Alatise,J. Hu,S. Jahdi,J. Ortiz Gonzalez,L. Ran,P. A. Mawby 전력전자학회 2015 ICPE(ISPE)논문집 Vol.2015 No.6

        This paper investigates the physics of device failure during avalanche for 1.2 kV SiC MOSFETs, silicon MOSFETs and silicon IGBTs. The impact of ambient temperature, initial conditions of the device prior to avalanche breakdown and the avalanche duration is explored for the different technologies. Two types of tests were conducted namely (i) constant avalanche duration with different peak avalanche currents and (ii) constant peak avalanche current with different avalanche durations. SiC MOSFETs are shown to be the most rugged technology followed by the silicon IGBT and the silicon MOSFET. The material properties of SiC suppress the triggering of the parasitic BJT that causes thermal runaway during avalanche.

      • Modeling of Temperature Dependent Parasitic Gate Turn-On in Silicon IGBTs

        R. Bonyadi,O. Alatise,S. Jahdi,J. Ortiz Gonzalez,L. Ran,P. A. Mawby 전력전자학회 2015 ICPE(ISPE)논문집 Vol.2015 No.6

        Parasitic turn-on can cause unintentional triggering of the IGBTs since the discharge current of the Miller capacitance coupled with high dV/dt can activate a device that should be off. The short circuit current resulting from parasitic turn-on coupled with the high voltage causes significant power dissipation which can be a reliability issue. This issue is exacerbated by higher ambient temperatures since the negative temperature coefficient of the IGBT’s threshold voltage as well as the positive temperature coefficient of the minority carrier lifetime will increase the peak and duration of the short circuit current. Accurate modeling of the shoot-through power and its temperature dependency is important for circuit designers when designing mitigation techniques like multiple resistive paths and bipolar gate drivers. The physics-based model proposed in this paper can produce accurate results with good matching over temperature. The model improves on compact circuit models based on lumped parameters.

      • KCI등재

        Artemisia dracunculus Extracts Obtained by Organic Solvents and Supercritical CO2 Produce Cytotoxic and Antitumor Effects in Mice with L5178Y Lymphoma

        Martha Hilda Navarro-Salcedo,Jorge Ivan Delgado-Saucedo,Victor Hugo Siordia-Sanchez,Luis J. Gonzalez-Ortiz,Gustavo Adolfo Castillo-Herrera,Ana M. Puebla-Perez 한국식품영양과학회 2017 Journal of medicinal food Vol.20 No.11

        We investigated the cytotoxic and antitumor effects of nine leaf extracts from Artemisia dracunculus (Tarragon). Five extracts were obtained using different organic solvents and four by supercritical CO2. The cytotoxic effects were expressed as IC50 in 100, 80, 80, 100, and 80 μg/mL by respective solvents: hexane, ethyl acetate, acetone, ethanol, and acetonitrile in L5178Y lymphoma cells. For supercritical CO2 extract A, IC50 was 100 μg/mL; for extracts C and D, IC50 was 150 μg/mL. The antitumor activity was assessed through a tumor growth inhibition test that measured ascites fluid volume and tumor cell counts of BALB/c mice (2 × 104 cells L5178Y i.p.). Twenty-four hours after inoculation, mice were treated with 100 mg/kg of acetonitrile extract or extract SF-A daily for 15 days in independent groups of five mice, using two administration routes. We observed tumor evolution with and without treatment. Without treatment, tumor evolution was 17,969 × 106 ± 5485 L5178Y cells in 2.6 mL ascites volume, whereas the orally treated acetonitrile extract group showed 0.1 × 106 ± 0.07 L5178Y cells (P < .05). The oral SF-A group showed 12.9 × 106 ± 243 L5178Y cells, and intraperitoneal (i.p.)-treated SF-A group showed 0.1 × 106 ± 0.05 L5178Y cells (P < .05) without any ascites volume development. The acetonitrile extract contains abundant polyphenols and possibly a flavone with antioxidant activity. The SF-A contains abundant alkamides. Both extracts are complexes and the identity of the compounds responsible for observed antitumor activity remains unknown.

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