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SCHOTTKY PROPERTIES OF ION BEAM DEPOSITED W-Si-N REFRACTORY CONTACTS ON GaAs
Park, C. S.,Lee, J. S.,Yang, J. W.,Shim, K. H.,Lee, J. H.,Choe, Y. K.,Kang, J. Y.,Ma, D. S.,Lee, J. Y. 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
We first tried low energy ion beam assisted deposition (IBAD) of refractory W-Si-N films onto GaAs for application to gate electrode of metal-semiconductor field effect transistors (MESFET). This ion beam technique provides lower process pressure, and less ion damage to substrates and films than conventional reactive sputter-deposition. The Schottky diode characteristics of W-Si-N contacts on GaAs and their thermal stability were investigated after annealing at 700-900℃ for 30 min. The Schottky barrier heights of W/, WN_(0 27)/, and WSi_(0 3)N_(0 4)/GaAs diodes annealed at 850 were 0.71, 0.84, and 0.76 eV respectively, which are comparable to those of the best results obtained by the conventional sputtering.
Lim, J.H.,Shim, J.H.,Choi, J.H.,Park, J.H.,Kim, W.,Joo, J.,Kim, C.J. North-Holland 2009 Physica. C, Superconductivity Vol.469 No.15
We fabricated nano-carbon (NC) doped MgB<SUB>2</SUB> bulks using an in situ process in order to improve the critical current density (J<SUB>c</SUB>) under a high magnetic field and evaluated the correlated effects of the doped carbon content and sintering temperature on the phase formation, microstructure and critical properties. MgB<SUB>2-x</SUB>C<SUB>x</SUB> bulks with x=0 and 0.05 were fabricated by pressing the powder into pellets and sintering at 800<SUP>o</SUP>C, 900<SUP>o</SUP>C, or 1000<SUP>o</SUP>C for 30min. We observed that NC was an effective dopant for MgB<SUB>2</SUB> and that part of it was incorporated into the MgB<SUB>2</SUB> while the other part remained (undoped), which reduced the grain size. The actual C content was estimated to be 68-90% of the nominal content. The NC doped samples exhibited lower T<SUB>c</SUB> values and better J<SUB>c</SUB>(B) behavior than the undoped samples. The doped sample sintered at 900<SUP>o</SUP>C showed the highest J<SUB>c</SUB> value due to its high doping level, small amount of second phase, and fine grains. On the other hand, the J<SUB>c</SUB> was decreased at a sintering temperature of 1000<SUP>o</SUP>C as a result of the formation of MgB<SUB>4</SUB> phase.