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Sung-Chul Choi,Soo-Young Lee,Hyun-Ouk Song,Jae-Sook Ryu,Myoung-Hee Ahn 대한기생충학열대의학회 2014 The Korean Journal of Parasitology Vol.52 No.2
We analyzed 320 clinical samples of parasitic infections submitted to the Department of Environmental Biology and Medical Parasitology, Hanyang University from January 2004 to June 2011. They consisted of 211 nematode infections, 64 trematode or cestode infections, 32 protozoan infections, and 13 infections with arthropods. The nematode infections included 67 cases of trichuriasis, 62 of anisakiasis (Anisakis sp. and Pseudoterranova decipiens), 40 of enterobiasis, and 24 of ascariasis, as well as other infections including strongyloidiasis, thelaziasis, loiasis, and hookworm infecions. Among the cestode or trematode infections, we observed 27 cases of diphyllobothriasis, 14 of sparganosis, 9 of clonorchiasis, and 5 of paragonimiasis together with a few cases of taeniasis saginata, cysticercosis cellulosae, hymenolepiasis, and echinostomiasis. The protozoan infections included 14 cases of malaria, 4 of cryptosporidiosis, and 3 of trichomoniasis, in addition to infections with Entamoeba histolytica, Entamoeba dispar, Entamoeba coli, Endolimax nana, Giardia lamblia, and Toxoplasma gondii. Among the arthropods, we detected 6 cases of Ixodes sp., 5 of Phthirus pubis, 1 of Sarcoptes scabiei, and 1 of fly larva. The results revealed that trichuriasis, anisakiasis, enterobiasis, and diphyllobothriasis were the most frequently found parasitosis among the clinical samples.
The Dimension of Trichomonas vaginalis as Measured by Scanning Electron Microscopy
Sang-Hoon Cheon,Seung Ryong Kim,Hyun-Ouk Song,Myoung-Hee Ahn,Jae-Sook Ryu 대한기생충학열대의학회 2013 The Korean Journal of Parasitology Vol.51 No.2
It is known that physicochemical conditions (e.g., pH, temperature, and ionic strength) affect the size of trichomonads. In this study, the sizes of 4 isolates of Trichomonas vaginalis cultured for more than a year (called “old T”) and 3 isolates freshly isolated from vaginitis cases (called “fresh T”) were compared by scanning electron microscopy. Although the fresh T had shorter body length, body width, and flagellar length than old T, total length (about 26 μm), including body length, flagella length, and axostyle length was almost the same in the 2 groups. A striking difference was observed between the axostyles of the 2 groups; the axostyle length of the fresh T (8.2 μm) was more than twice as long as that of the old T (4.0 μm). However, in several parasitology textbooks, the length of T. vaginalis is said to vary widely from 7 to 32 μm, and its undulating membrane is said to extend about half way (53.5%) to the posterior end of the body. On the other hand, in our study, the undulating membrane was observed to extend more than 3/4 of the body length (72.1%) in old T, whereas in fresh T it could not be measured. Taken together, we suggest that T. vaginalis averages 26 (21-32) μm in total length, with 9.5 (7.4-11.4) μm of body length and 6.8 (5.3-7.7) μm of width, and its undulating membrane extending 3/4 of its body length. Therefore, these findings may provide useful information for morphological characteristics of T. vaginalis.
Characteristics of Surface Micromachined Pyroelectric Infrared Ray Focal Plane Array
Ryu, Sang-Ouk,Cho, Seong-Mok,Choi, Kyu-Jeong,Yoon, Sung-Min,Lee, Nam-Yeal,Yu, Byoung-Gon The Institute of Electronics and Information Engin 2005 Journal of semiconductor technology and science Vol.5 No.1
We have developed surface micromachined Infrared ray (IR) focal plane array (FPA), in which single $SiO_{2}$ layer works as an IR absorbing plate and $Pb(Zr_{0.3}Ti_{0.7})O_{2}$ thin film served as a thermally sensitive material. There are some advantages of applying $SiO_{2}$ layer as an IR absorbing layer. First of all, the $SiO_{2}$ has good IR absorbance within $8{\sim}12{\mu}m$ spectrum range. Measured value showed about 60% absorbance of incident IR spectrum in the range. $SiO_{2}$ layer has another important merit when applied to the top of Pt/PZT/Pt stack because it works also as a supporting membrane. Consequently, the IR absorbing layer forms one body with membrane structure, which simplifies the whole MEMS process and gives robustness Ito the structure.
Characteristics of Surface Micromachined Pyroelectric Infrared Ray Focal Plane Array
Sang-Ouk Ryu,Seong Mok Cho,Kyu-Jeong Choi,Sung-Min Yoon,Nam-Yeal Lee,Byoung-Gon Yu 대한전자공학회 2005 Journal of semiconductor technology and science Vol.5 No.1
We have developed surface micromachined Infrared ray (IR) focal plane array (FPA), in which single SiO2 layer works as an IR absorbing plate and Pb(Zr0.3Ti0.7)O3 thin film served as a thermally sensitive material. There are some advantages of applying SiO2 layer as an IR absorbing layer. First of all, the SiO2 has good IR absorbance within 8 ~ 12 μm spectrum range. Measured value showed about 60% absorbance of incident IR spectrum in the range. SiO2 layer has another important merit when applied to the top of Pt/PZT/Pt stack because it works also as a supporting membrane. Consequently, the IR absorbing layer forms one body with membrane structure, which simplifies the whole MEMS process and gives robustness to the structure.
Sb-Se-based phase-change memory device with lower power and higher speed operations
Yoon, Sung-Min,Lee, Nam-Yeal,Ryu, Sang-Ouk,Choi, Kyu-Jeong,Park, Y.-S.,Lee, Seung-Yun,Yu, Byoung-Gon,Kang, Myung-Jin,Choi, Se-Young,Wuttig, M. IEEE 2006 IEEE electron device letters Vol.27 No.6
A phase-change material of Sb<SUB>65</SUB>Se<SUB>35</SUB> was newly proposed for the nonvolatile memory applications. The fabricated phase-change memory device using Sb<SUB>65</SUB>Se<SUB>35</SUB> showed a good electrical threshold switching characteristic in the dc current-voltage (I-V) measurement. The programming time for set operation of the memory device decreased from 1 μs to 250 ns when Sb<SUB>65</SUB>Se<SUB>35</SUB> was introduced in place of the conventionally employed Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> (GST). The reset current of Sb<SUB>65</SUB>Se<SUB>35</SUB> device also dramatically reduced from 15 mA to 1.6 mA, compared with that of GST device. These results are attributed to the low melting temperature and high crystallization speed of Sb<SUB>65</SUB>Se<SUB>35</SUB> and will contribute to lower power and higher speed operations of a phase-change nonvolatile memory.
Gong, Su-Cheol,Ryu, Sang-Ouk,Bang, Seok-Hwan,Jung, Woo-Ho,Jeon, Hyeong-Tag,Kim, Hyun-Chul,Choi, Young-Jun,Park, Hyung-Ho,Chang, Ho-Jung The Korean Microelectronics and Packaging Society 2009 마이크로전자 및 패키징학회지 Vol.16 No.4
Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.