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Inseok Hur,Hagyoul Bae,Woojoon Kim,Jaehyeong Kim,Hyun Kwang Jeong,Chunhyung Jo,Sungwoo Jun,Jaewook Lee,Yun Hyeok Kim,Dae Hwan Kim,Dong Myong Kim IEEE 2013 IEEE electron device letters Vol.34 No.2
<P>Due to voltage drops across parasitic resistances in semiconductor devices, extracted performance parameters can be strongly dependent on the geometrical structure. In this letter, we report a characterization technique for the intrinsic field-effect mobility μ<SUB>FEo</SUB> in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) by de-embedding the parasitic source and drain resistances <I>R</I><SUB>S</SUB> and <I>R</I><SUB>D</SUB>, respectively. We obtained the channel-length (<I>L</I>) -independent intrinsic field-effect mobility μ<SUB>FEo</SUB> from TFTs with various channel lengths on the same wafer. We expect that this characterization technique for <I>L</I>-independent intrinsic field-effect mobility is useful for accurate characterization, consistent modeling, and robust simulation of a-IGZO TFT circuits.</P>
Hagyoul Bae,Inseok Hur,Ja Sun Shin,Daeyoun Yun,Euiyoun Hong,Keum-Dong Jung,Mun-Soo Park,Sunwoong Choi,Won Hee Lee,Mihee Uhm,Dae Hwan Kim,Dong Myong Kim IEEE 2012 IEEE electron device letters Vol.33 No.4
<P>We report a hybrid technique for extraction of structure- and gate-bias-dependent parasitic source/drain (S/D) resistances (<I>RS</I> and <I>RD</I>) in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). In the proposed technique, <I>C</I>- <I>V</I> and <I>I</I> -<I>V</I> measurements are combined for modeling and extraction. As structural dependence, the active-layer thickness <I>T</I><SUB>IGZO</SUB> , the gate length <I>L</I>, and the overlap length <I>L</I><SUB>ov</SUB> between the S/D and the gate are considered in the equivalent circuit for parasitic resistances. We also separated the horizontal component <I>RH</I> considering the transfer resistance <I>R</I><SUB>LT</SUB> depending on the transfer length <I>LT</I> and the channel resistance <I>R</I><SUB>CH</SUB>, as well as the vertical components in the S/D <I>R</I><SUB>VS</SUB> and <I>R</I><SUB>VD</SUB>. We confirmed the proposed technique through a separate extraction of <I>VGS</I> -independent contact resistances (<I>R</I><SUB>CS</SUB>, <I>R</I><SUB>CD</SUB>) from the channel length- and <I>VGS</I>-dependent <I>R</I><SUB>LT</SUB> and <I>R</I><SUB>CH</SUB>.</P>
Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A
Yong Woo Jeon,Inseok Hur,Yongsik Kim,Minkyung Bae,Hyun Kwang Jung,Dongsik Kong,Woojoon Kim,Jaehyeong Kim,Jaeman Jang,Dong Myong Kim,Dae Hwan Kim 대한전자공학회 2011 Journal of semiconductor technology and science Vol.11 No.3
In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (aIGZO) TFT inverter by using Verilog-A. As key physical parameter, subgap density-of-states (DOS) is extracted and used for calculating the electric potential, carrier density, and mobility along the depth direction of active thin-film. It is confirmed that the proposed DOS-based SPICE model can successfully reproduce the voltage transfer characteristic of a-IGZO inverter as well as the measured I-V characteristics of a-IGZO TFTs within the average error of 6% at V/)/)=20 V.
Kim, Jaehyeong,Jang, Jaeman,Bae, Minkyung,Lee, Jaewook,Kim, Woojoon,Hur, Inseok,Jeong, Hyun Kwang,Kim, Dong Myong,Kim, Dae Hwan The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.1
In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced the nonlinearity in the output characteristics of OTFT.
김용식,Minkyung Bae,Dongsik Kong,Hyun Kwang Jung,Jaehyeong Kim,Woojoon Kim,Inseok Hur,김동명,김대환 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.21
The physical origins of the negative bias illumination stress (NBIS)-induced threshold voltage shift (VT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under ambient light from a backlight unit are quantitatively and systematically investigated. Furthermore, a methodology for extracting the instability parameters is proposed and demonstrated. For the quantitative analysis, the subgap density-of-states (DOS)-based DC I-V model is intensively used. The NBIS time-evolution of the measured IDS-VGS characteristics is reproduced very well via the proposed methodology and instability parameters. Consequently, photo-excited electron detrapping, followed by ionization of oxygen vacancies (VO^(+2)) and field-enhanced VO^(+2) diffusion, followed by hole trapping into the gate insulator, are found to be the dominant mechanisms in NBIS-induced instability of a-IGZO TFTs.
Jaehyeong Kim,Jaeman Jang,Minkyung Bae,Jaewook Lee,Woojoon Kim,Inseok Hur,Hyun Kwang Jeong,Dong Myong Kim,Dae Hwan Kim 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.1
In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced the nonlinearity in the output characteristics of OTFT.
Minkyung Bae,Yongsik Kim,Dongsik Kong,Hyun Kwang Jeong,Woojoon Kim,Jaehyeong Kim,Inseok Hur,Dong Myong Kim,Dae Hwan Kim IEEE 2011 IEEE electron device letters Vol.32 No.11
<P>Analytical drain current and gate capacitance models for amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) over sub- and above-threshold regions are proposed by adopting an effective carrier density for the dominant carrier density. The effective carrier density fully considers the free carriers in the conduction band, the localized subgap deep states, and tail states over the bandgap for analytical <I>I</I>-<I>V</I> and <I>C</I>-<I>V</I> characteristics. The proposed analytical models are verified by comparing the measured <I>I</I>-<I>V</I> and <I>C</I>-<I>V</I> characteristics. The proposed models make a time-efficient simulation of a-IGZO TFT-based circuits possible due to their analytical form.</P>
Dongsik Kong,Hyun Kwang Jung,Yongsik Kim,Minkyung Bae,Jaeman Jang,Jaehyeong Kim,Woojoon Kim,Inseok Hur,김동명,김대환 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.21
The effect of the active layer thickness (T_(IGZO) ) on the negative bias illumanation stress (NBIS)-induced threshold voltage shift (VT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states model. The NBIS-induced VT in a-IGZO TFT with a thinner T_(IGZO) is negatively larger than that in a-IGZO TFTs with a thicker T_(IGZO) . The T_(IGZO) -dependent VT is found to be caused by either hole trapping into the gate insulator near the interface or oxygen vacancy (Vo) ionization, which is activated more by a larger surface electric field EIGZO as T_(IGZO) becomes thinner.
Hagyoul Bae,Sungwoo Jun,Choon Hyeong Jo,Hyunjun Choi,Jaewook Lee,Yun Hyeok Kim,Seonwook Hwang,Hyun Kwang Jeong,Inseok Hur,Woojoon Kim,Daeyoun Yun,Euiyeon Hong,Hyojoon Seo,Dae Hwan Kim,Dong Myong Kim IEEE 2012 IEEE electron device letters Vol.33 No.8
<P>We propose a modified conductance method for extraction of the subgap density of states (DOS) in amorphous indium-gallium-zinc oxide thin-film transistors by using the measured capacitance and conductance through the capacitance-voltage (C-V) measurement. In the proposed method, the subgap DOS [g<SUB>A</SUB>(E)] is extracted from the frequency-dispersive C-V characteristics by localized traps in the active channel region. The extracted g<SUB>A</SUB>(E) shows a superposition of the exponential tail states and the exponential deep states over the bandgap (N<SUB>TA</SUB> = 3 × 10<SUP>18</SUP> cm<SUP>-3</SUP> · eV<SUB>-1</SUB>, N<SUB>DA</SUB> = 2.8 × 10<SUP>17</SUP> cm<SUP>-3</SUP> · eV-1, kT<SUB>TA</SUB> = 0.04 eV, and kT<SUB>DA</SUB> = 0.77 eV). We note that the gate-bias-dependent Cfree by free electron charges can be separated from C<SUB>loc</SUB> by localized trap charges through the proposed method.</P>