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RISS 인기검색어
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- 저자 : Dongxu Xin (검색결과 4 건)
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Effects of Plasma Treatment on the Reliability of a-IGZO TFT
Dongxu Xin,Ziyang Cui,김태용,이준신 한국전기전자재료학회 2021 전기전자재료학회논문지 Vol.34 No.2
High reliability thin film transistors are important factors for next-generation displays. The reliability of transparent a-IGZO semiconductors is being actively studied for display applications. A plasma treatment can fill theoxygen vacancies in the channel layer and the channel layer/insulating layer interface so that the device can work stably under a bias voltage. This paper studies the effect of plasma treatment on the performance of a-IGZO TFT devices. The influence of different plasma gases on the electrical parameters of device and its working reliability are reviewed. The article mentions argon, fluorine, hydrogen and several ways of processing in the atmosphere. Among these methods, F(fluorine) plasma treatment can maximize equipment reliability. It is expected that the presented results will form a basis for further research to improve the reliability of a-IGZO TFT.
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Zhihang Peng,Dongxu Yan,Qiang Chen,Deqiong Xin,Dan Liu,Dingquan Xiao,Jian-guo Zhu 한국물리학회 2014 Current Applied Physics Vol.14 No.12
Aurivillius phase Bi3Ti1xTaxNb1xWxO12 high temperature piezoceramics were prepared by a conventional solid state reaction method. The crystal structure, dielectric, electrical conduction and piezoelectric properties were systematically studied. Pure or modified Bi3TiNbO9 ceramics revealed the presence of only two-layered Aurivillius phase, indicating that Ta/W doping entered into the B-site of pseudo-perovskite structure and formed solid solutions. The Curie temperature had a strong reliance on the structural distortion. Furthermore, Ta/W dopants act as a donor doping, decrease the number of oxygen vacancies and facilitate the domain wall motion. As a result, Ta/W modifications significantly increase the DC resistivity and piezoelectric properties. Bi3Ti0.98Ta0.02Nb0.98W0.02O12 ceramics possess the optimum d33 value (~12.5 pC/N) together with a high TC point (~893 C). Moreover, the resonance eantiresonance spectra demonstrate that the Ta/W-BTN ceramics are indeed piezoelectric in nature at 600 C. The d33 value of BTTNW-2 ceramic remains ~12.2 pC/N after annealing at 700 C. These factors suggest that the BTTNW-based ceramic is a promising candidate for ultra-high temperature sensor applications.
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Effect of Nitrogen, Titanium, and Yttrium Doping on High-K Materials as Charge Storage Layer
Cui, Ziyang,Xin, Dongxu,Park, Jinsu,Kim, Jaemin,Agrawal, Khushabu,Cho, Eun-Chel,Yi, Junsin The Korean Institute of Electrical and Electronic 2020 전기전자재료학회논문지 Vol.33 No.6
Non-volatile memory is approaching its fundamental limits with the Si<sub>3</sub>N<sub>4</sub> storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd<sub>2</sub>O<sub>3</sub> storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO<sub>2</sub> storage layer. Yttrium doping increases the storage window of the BaTiO<sub>3</sub> storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.
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Xiong, Shisheng,Li, Dongxue,Hur, Su-Mi,Craig, Gordon S. W.,Arges, Christopher G.,Qu, Xin-Ping,Nealey, Paul F. American Chemical Society 2018 Macromolecules Vol.51 No.18
<P>Using a combination of systematic experiments and Monte Carlo simulations, this report demonstrates that the distribution of neutral solvent has a strong impact on the quality and kinetics of the self-assembly of block copolymers in thin films. Both methyl ethyl ketone (MEK, a good solvent) and acetone (a relatively poor solvent) were used for the solvent vapor annealing (SVA) of thin films of poly(2-vinylpyridine)-<I>block</I>-polystyrene-<I>block</I>-poly(2-vinylpyridine) (VSV) triblock copolymer. Acetone, the poorer solvent, accumulated at the interface of the VSV domains, while MEK was distributed more uniformly throughout the VSV. As a result, acetone screened the interactions between the blocks of the copolymer more than MEK. Because MEK afforded less screening of the different blocks, solvent annealing with MEK led to self-assembly of lower molecular weight VSV triblock copolymers than was possible with acetone. Solvent annealing with MEK also led to slower self-assembly kinetics and smaller correlation lengths in the assembled pattern compared to solvent annealing with acetone. Finally, long-range ordered structures of low molecular weight VSV triblock copolymer on a chemical pattern via directed self-assembly was demonstrated with 6× density multiplication by annealing in MEK.</P> [FIG OMISSION]</BR>
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