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Effect of Nitrogen, Titanium, and Yttrium Doping on High-K Materials as Charge Storage Layer
Cui, Ziyang,Xin, Dongxu,Park, Jinsu,Kim, Jaemin,Agrawal, Khushabu,Cho, Eun-Chel,Yi, Junsin The Korean Institute of Electrical and Electronic 2020 전기전자재료학회논문지 Vol.33 No.6
Non-volatile memory is approaching its fundamental limits with the Si<sub>3</sub>N<sub>4</sub> storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd<sub>2</sub>O<sub>3</sub> storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO<sub>2</sub> storage layer. Yttrium doping increases the storage window of the BaTiO<sub>3</sub> storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.
Effects of Plasma Treatment on the Reliability of a-IGZO TFT
Dongxu Xin,Ziyang Cui,김태용,이준신 한국전기전자재료학회 2021 전기전자재료학회논문지 Vol.34 No.2
High reliability thin film transistors are important factors for next-generation displays. The reliability of transparent a-IGZO semiconductors is being actively studied for display applications. A plasma treatment can fill theoxygen vacancies in the channel layer and the channel layer/insulating layer interface so that the device can work stably under a bias voltage. This paper studies the effect of plasma treatment on the performance of a-IGZO TFT devices. The influence of different plasma gases on the electrical parameters of device and its working reliability are reviewed. The article mentions argon, fluorine, hydrogen and several ways of processing in the atmosphere. Among these methods, F(fluorine) plasma treatment can maximize equipment reliability. It is expected that the presented results will form a basis for further research to improve the reliability of a-IGZO TFT.